Publication Date:
2015-03-25
Description:
We have systematically studied the impact of interfacial InAs layers on Al 2 O 3 /GaSb metal-oxide-semiconductor (MOS) interface properties. The interfacial InAs layers improved the capacitance versus voltage ( C-V ) curves of the Al 2 O 3 /GaSb MOS capacitors (MOSCAPs) fabricated by an ex-situ process. The minimum interface-trap density ( D it ) value of an Al 2 O 3 /1.5-nm-thick InAs/p-GaSb MOSCAP is ∼6.6 × 10 12 cm −2 eV −1 , which is reduced by ∼50% from that of ∼1.4 × 10 13 cm −2 eV −1 in an Al 2 O 3 /p-GaSb MOSCAP. Also, the interfacial InAs layers significantly improved the C-V curves of the Al 2 O 3 /n-GaSb MOSCAPs. The InAs layer can improve the Al 2 O 3 /GaSb MOS interface properties both in valence band side and in conduction band side.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
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