Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3543-3545
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The detailed cross-sectional structure of InGaAs quantum dots fabricated by a heterogeneous droplet epitaxy method was investigated by means of cross-sectional transmission electron microscopy observation. It was confirmed that concave disks without any dislocations or wetting layer were formed at the upper part of the flat surface. This result was consistent with the change of photoluminescence intensity and peak position. The sizes of the disks were estimated to be 30 and 12 nm in lateral and vertical directions, respectively. From this estimation, the occurrence of a phase-separation effect is suggested. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126701
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