ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
All vacuum-deposited metal/semiconducting polyaniline hetrojunction Schottky devices using vacuum-evaporated polyaniline films of a thickness of the order of 0.1 μm have been prepared. Schottky junctions have been formed using the following metals, Al, Sn, In, Pb, Sb, and Ag. Electrical characterization has been carried out and electronic parameters, including the barrier height and ideality factor, have been determined. Infrared optical absorption spectroscopy of the vacuum-deposited polyaniline films were used to determine the structure, energy band gap, and effect of various ambients on the vacuum-deposited polyaniline films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107600
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