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  • 1
    Electronic Resource
    Electronic Resource
    An analytical solution to predict the drive-in of N- and P-well implants in high-temperature process steps (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4699-4713 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear two-dimensional boundary-value problem that governs the redistribution of low-dose N- and P-well implants during high-temperature drive cycles in inert and oxidizing ambients is solved analytically in this paper. The oxide growth rate that appears in the defining equations of the boundary-value problem is made independent of time by subdividing the process step into smaller time intervals and replacing the oxide growth in each interval by its average value. The resultant boundary-value problem was then solved such that the solution evolves from a specified initial distribution, using the Green's function technique. By using the final impurity distribution in a prior interval of time as the initial distribution in a subsequent interval, in a sequential manner, a hierarchy of solutions is generated that spans the entire process step. The program for generating this hierarchy of solutions was applied to two examples pertaining to the drive-in of N- and P-well implants. The obtained results were, for all practical purposes, identical to those of the romansii (redistribution and oxidation modeling analysis by simulation in II dimensions) program, thus confirming the validity of the analytical solution. Because the discretized system of equations becomes stiff for high-temperature (1165 °C) drive cycles, the CPU times obtained on the DEC(8800) computer with the analytical solution of this paper were at least two orders of magnitude smaller than those obtained with the romansii program. In regions where the two-dimensional simulations can be reasonably approximated by one-dimensional profiles, the obtained correlation with the SUPREM3 (Stanford University Process Engineering Models 3) predictions was excellent.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343220
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  • 2
    Electronic Resource
    Electronic Resource
    Thermal redistribution of boron implants in bulk silicon and SOS type structures (1982)
    Springer
    Applied physics 27 (1982), S. 219-231 
    Details
    ISSN: 1432-0630
    Keywords: 61.70.Tm ; 61.70.Wp ; 66.30.Jt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The redistribution of boron profiles in bulk silicon and SOS (silicon-on-sapphire) type structures is investigated in this paper. Experimental data on thermally redistributed profiles are correlated with predictions based on a computer program whose numerical algorithm was described in an earlier paper. Three cases were considered which involved the thermal redistribution of 1) a high dose (2×1015 and 5×1014 cm−2) 80keV boron implant in (111) bulk silicon, in an oxidizing ambient of steam at 1000°, 1100°, and 1200°C, respectively; 2) a high dose (2.3×1015 cm−2) 25 keV boron implant in (100) silicon-on-sapphire, in a nonoxidizing ambient of nitrogen at 1000 °C; and 3) a low dose (3.2×1012 cm−2) 150 keV boron implant in (100) bulk silicon, in oxidizing and nonoxidizing ambients that make up the fabrication schedule of an-channel enhancement mode device. For all three cases the overall correlation of computer predictions with experimental data was excellent. Correlations with experimental data based on SUPREM predictions are also included.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00619083
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  • 3
    Electronic Resource
    Electronic Resource
    An analytical technique for calculation of distributed resistance in a rectangular domain (1988)
    Springer
    Applied physics 47 (1988), S. 333-346 
    Details
    ISSN: 1432-0630
    Keywords: 85.40 ; 41.00
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A Green's function approach is used to obtain an integral representation for the electric potential in a multi-terminal distributed resistive structure. This integral representation for the potential is then used to formulate a coupled system of Fredholm integral equations of the first kind, in which the normal components of current density over the different terminal contacts are the unknowns. A procedure for solving this system of equations is presented and the obtained results for the unknown normal components of the current density are used to express the electric potential and current density vector at any point in the domain of the distributed resistive structure. The indefinite admittance matrix relating the terminal currents to the applied terminal voltages, is a by-product of the solution process. Explicit expressions for the Green's function and complete orthonormal sets of functions which are required to apply the solution to a rectangular domain are given. Applications to three-terminal structures are considered in order to illustrate the method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615497
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  • 4
    Electronic Resource
    Electronic Resource
    ROMANS II A two-dimensional process simulator for modeling and simulation in the design of VLSI devices (1983)
    Springer
    Applied physics 31 (1983), S. 119-138 
    Details
    ISSN: 1432-0630
    Keywords: 85.40
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract During the past decade considerable effort has been devoted to the development of two-dimensional (2D) device simulators while the development of two-dimensional process simulators, except for the past few years, has been almost nonexistent. To eliminate this lag in the development of 2D process simulators recent research has been directed entirely towards the development of simulators for predicting the thermal redistribution of impurities in bulk device structures; whereas, in the present paper a process simulator, ROMANS II, has been developed which is capable of simulating the redistribution of impurities in both bulk and SOS device structures. All the elements of two-dimensional process modeling which were used to assemble ROMANS II are presented. For example, Runge's approximate procedure for characterizing 2D distributions of ion implants in physical domains of actual device structures is discussed in great detail. Also discussed in great detail are the 2D empirical and phenomenological models used to specify oxide growths on silicon surfaces. A complete formulation of the governing nonlinear boundaryvalue problem for the redistribution of impurities in the physical domain of a device and the corresponding transformation of this problem to a fixed-time invariant rectangular domain by means of a translation-scaling transformation are presented. The numerical algorithm used to solve the nonlinear boundary-value problem in the fixed-time invariant rectangular domain is briefly discussed since a more detailed discussion is given elsewhere. Finally, ROMANS II is utilized to simulate the thermal redistribution of the field, channel, and source/drain implants which were used in fabricating a 1 μmn-channel enhancement mode device. The simulation was carried through the entire device fabrication schedule and the surface topography and corresponding equi-density contours for the net impurity concentration at the end of key process steps are given.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00624718
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  • 5
    Electronic Resource
    Electronic Resource
    An analytical technique for calculation of distributed resistance in a rectangular domain (1988)
    Springer
    Applied physics 47 (1988), S. 333-346 
    Details
    ISSN: 1432-0630
    Keywords: 85.40 ; 41.00
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A Green's function approach is used to obtain an integral representation for the electric potential in a multi-terminal distributed resistive structure. This integral representation for the potential is then used to formulate a coupled system of Fredholm integral equations of the first kind, in which the normal components of current density over the different terminal contacts are the unknowns. A procedure for solving this system of equations is presented and the obtained results for the unknown normal components of the current density are used to express the electric potential and current density vector at any point in the domain of the distributed resistive structure. The indefinite admittance matrix relating the terminal currents to the applied terminal voltages, is a by-product of the solution process. Explicit expressions for the Green's function and complete orthonormal sets of functions which are required to apply the solution to a rectangular domain are given. Applications to three-terminal structures are considered in order to illustrate the method.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00615497
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  • 6
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    Nonlinear thermal redistribution of boron impurities in SOS device structures (1978)
    American Institute of Physics
    Details
    Publication Date: 1978-09-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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  • 7
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    Thermal redistribution of impurities in silicon‐on‐sapphire: Theoretical development (1976)
    American Institute of Physics
    Details
    Publication Date: 1976-06-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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  • 8
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    Ambipolar Drift Noise in a Semiconductor in the Presence of a Magnetic Field (1970)
    American Institute of Physics
    Details
    Publication Date: 1970-04-01
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics
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  • 9
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    An analytical technique for calculation of distributed resistance in a rectangular domain (1988)
    Springer
    Details
    Publication Date: 1988-12-01
    Print ISSN: 0947-8396
    Electronic ISSN: 1432-0630
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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  • 10
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    ROMANS II A two-dimensional process simulator for modeling and simulation in the design of VLSI devices (1983)
    Springer
    Details
    Publication Date: 1983-07-01
    Print ISSN: 0947-8396
    Electronic ISSN: 1432-0630
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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