ISSN:
1573-9120
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Experimental-study results are presented on the sheet resistance and low-frequency current-noise spectra in silicon layers that have been implanted by phosphorous and boron ions as functions of the conditions of implantation and post-implantation heat treatment. Results of evaluation of the Pearson implantation profiles are presented to explain the obtained dependences, and data in the literature on defects in ion-implanted silicon are cited. The noise spectra are analyzed using Hooge's empirical formula.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01039700
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