Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 3938-3940
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Photon counting, utilizing Geiger-mode avalanche response, has been demonstrated at 300 K in avalanche photodiodes fabricated in GaN grown by hydride vapor-phase epitaxy. Measurements have been made using both passive-quench and time-gated modes of operation. The two important figures of merit for photon-counting applications, photon detection efficiency (PDE) and dark count rate, were measured. A maximum PDE of 13% was measured at 325 nm with a dark count rate of 400 kHz. Typical mesa-etched devices exhibit a parasitic shunt leakage current of less than 20 nA at 90% of breakdown voltage. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126827
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