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  • 1
    Electronic Resource
    Electronic Resource
    The Synthesis of Aldehydes from the Reaction of Amines with Butadiene (1966)
    s.l. : American Chemical Society
    The @journal of organic chemistry 31 (1966), S. 3713-3718 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo01349a053
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  • 2
    Electronic Resource
    Electronic Resource
    Surface electron-diffraction patterns of β-FeSi2 films epitaxially grown on silicon (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1747-1761 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Semiconducting β-FeSi2 is drawing much current research interest because of hoped-for silicon-based optoelectronics applications. The study of heteroepitaxial film growth on silicon depends heavily upon several transmission and reflection electron-diffraction techniques. Because of the complicated crystal structure of this material, the possibility of competing heteroepitaxial relationships, the propensity for formation of epitaxial variants by rotation twinning, and the uncertainty in the crystalline surface nets, the analysis of experimental diffraction patterns is complicated. A theoretical reference for a number of fundamental electron-diffraction patterns is provided and they are illustrated with a broad range of experimentally obtained patterns from the surfaces of epitaxial films. In situ transmission reflection high-energy electron diffraction (RHEED) (transmission electron diffraction with conventional RHEED instrumentation), from rough but epitaxial films, is of great utility and quite feasible with epitaxial systems such as this one, which exhibit a tendency toward islanding. The possibilities for experimentally distinguishing, with this technique, the competing epitaxial relationships on Si(111) are clarified; it is found that the β-FeSi2(110) matching face is certainly present in these samples and the (101) may be also. An experimental determination of the two-dimensional space groups of the (100), (110), and (101) faces is also presented—in the first and third cases the surface unit meshes are different from the simple projections of the bulk crystalline unit cell.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354804
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  • 3
    Electronic Resource
    Electronic Resource
    Epitaxial orientation and morphology of β-FeSi2 on (001) silicon (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1730-1736 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially aligned films of β-FeSi2 were grown on (001) silicon by reactive deposition epitaxy (RDE), molecular-beam epitaxy (MBE), and solid-phase epitaxy (SPE). Although the matching crystallographic faces, FeSi2 (100)/Si(001), remained invariant throughout this study, two different azimuthal orientations predominated, depending on the deposition mode and growth temperature. Films with the FeSi2[010](parallel)Si〈110〉 orientation (grown by RDE at typically 500 °C) were of a genuine large-area single-crystal structure; however, the surface morphology was rough due to islanding which always preceeded the formation of a continuous film. Films of the alternative azimuthal orientation FeSi2[010](parallel)Si〈100〉 (which were grown by SPE at typically 250 °C or by MBE at temperatures as low as 200 °C on top of an SPE-grown template) have a much smoother surface morphology. However, there was some loss of purity in the epitaxial alignment at these extremely low temperatures. Excellent RHEED (reflection high-energy electron diffraction) streak patterns were observed for all the films; the technique was used for the determination of azimuthal orientation. In addition, we have shown that it is possible to determine the entire heteroepitaxial relationship using RHEED.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349543
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  • 4
    Electronic Resource
    Electronic Resource
    Heteroepitaxial relationships for CrSi2 thin films on Si(111) (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3088-3094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Vacuum evaporation techniques were applied to the epitaxial growth of CrSi2 on Si(111) substrates. There are two CrSi2 matching faces which offer good lattice matchings, and which are observed experimentally: the (001) and the (111). These are present together in films grown by reactive deposition at temperatures from 450 to 1000 °C, with the latter matching face becoming more dominant as the growth temperature is raised. During an anneal at 1100 °C, however, the regions of the (111) matching face disappear in films ≥∼84 A(ring) thick. Moderately good epitaxial alignment is obtained with the other matching face operative. Films ≤∼30 A(ring) thick yield an opposite result: they adopt exclusively the (111) matching face as a result of this anneal. For both heteroepitaxial relationships, a strong islanding tendency is manifested during growth (unless the CrSi2 layer is more than a few thousands of angströms thick), which is accentuated by such a post-growth anneal. The population of CrSi2 islands exhibits a gradual strain relaxation with increasing average island size. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359539
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  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial ternary RexMo1−xSi2 thin films on Si(100) (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3924-3927 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Reactive deposition epitaxy was used to synthesize thin layers of RexMo1−xSi2 on Si(100). In the case of x=1, ReSi2 layers of excellent crystalline quality have been reported previously [J. E. Mahan, K. M. Geib, G. Y. Robinson, R. G. Long, Y. Xinghua, G. Bai, and M.-A. Nicolet, Appl. Phys. Lett. 56, 2439 (1990)]. In the case of x=0, however, virtually no alignment of the MoSi2 and the substrate is found, although this silicide is nearly isomorphic to ReSi2. For intermediate values of x, highly epitaxial ternary silicides are obtained, at least for a Mo fraction up to 1/3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356038
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  • 6
    Electronic Resource
    Electronic Resource
    Amorphization and recrystallization of epitaxial ReSi2 films grown on Si(100) (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1884-1886 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We used 2 MeV 4He backscattering spectrometry, x-ray diffractometry, and the van der Pauw technique to study how epitaxial ReSi2 films on Si(100) change structurally and electrically upon room-temperature implantation of 300 keV 28Si or 380 keV 40Ar. The as-grown film has a minimum channeling yield of ∼2% for Re, and a resistivity of ∼23 mΩcm at room temperature. Ion implantation produces damage in the film, which increases monotonically with dose. At a dose of either 5×1014 28Si/cm2 or 1×1014 40Ar/cm2, the entire ReSi2 film becomes both x-ray and channeling amorphous. The resistivity of the film decreases monotonically with dose. The amorphous film has a resistivity of ∼1.2 mΩcm at room temperature. Upon annealing in vacuum at 700 °C for 30 min, the damage anneals out and the amorphous ReSi2 film recrystallizes epitaxially, once again exhibiting a minimum channeling yield of ∼2% for Re and a resistivity of ∼23 mΩcm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105062
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  • 7
    Electronic Resource
    Electronic Resource
    Chemistry of cyclobutene-1,2-dicarbonitrile. 1. Solvolytic and Michael processes (1977)
    s.l. : American Chemical Society
    The @journal of organic chemistry 42 (1977), S. 1948-1951 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00431a026
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  • 8
    Electronic Resource
    Electronic Resource
    Chemistry of cyclobutene-1,2-dicarbonitrile. 2. Cycloadducts (1977)
    s.l. : American Chemical Society
    The @journal of organic chemistry 42 (1977), S. 2597-2601 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00435a013
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  • 9
    Electronic Resource
    Electronic Resource
    Dimers of cyclobutene-1,2-dicarbonitrile and 1,3-butadiene-2,3-dicarbonitrile. Preparation and chemistry (1977)
    s.l. : American Chemical Society
    The @journal of organic chemistry 42 (1977), S. 2601-2610 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00435a014
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  • 10
    Electronic Resource
    Electronic Resource
    1,3-Butadiene-2,3-dicarboxylic acid derivatives from cyclohexene-1,2-dicarboxylic acid analogs (1977)
    s.l. : American Chemical Society
    The @journal of organic chemistry 42 (1977), S. 2829-2832 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00437a009
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