ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
The thermal expansion of 6H Silicon Carbide with different dopant concentrations ofaluminum and nitrogen was determined by lattice parameter measurements at temperatures from300 K to 1575 K. All samples have a volume of at least 6 x 6 x 6 mm3 to ensure that bulk propertiesare measured. The measurements were performed with a triple axis diffractometer with high energyx-rays with a photon energy of 60 keV. The values for the thermal expansion coefficients along thea- and c-direction, α11 and α33, are in the range of 3·10-6 K-1 for 300 K and 6·10-6 K-1 for 1550 K. Athigh temperatures the coefficients for aluminum doped samples are approximately 0.5·10-6 K-1lower than for the nitrogen doped crystal. α11 and α33 appear to be isotropic
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.517.pdf
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