ALBERT

Notes: We report chemical vapor deposition growth of SiGeC layers on 〈100〉 Si substrates. At the growth temperature of 550 °C, the C concentration as high as 2% can be incorporated into SiGe (Ge content ∼ 25%) to form single crystalline random alloys by using low flow of methylsilane (0.25 sccm) as a C precursor added in a dichlorosilane and germane mixture. For intermediate methylsilane flow (0.5 sccm – 1.5 sccm), the Fourier transform infrared spectroscopy (FTIR) absorption spectra indicate the growth of amorphous layers. For the layers with high flow of methylsilane (12 sccm), there are silicon-carbide-like peaks in the FTIR spectra, indicating silicon carbide precipitation. The films were also characterized by x-ray diffraction, high resolution transmission electron microscopy, secondary ion mass spectroscopy, and Rutherford backscattering spectroscopy to confirm crystallinity and constituent fractions. The defect-free band-edge photoluminescence at both 30 K and 77 K was observed in Si/SiGeC/Si quantum wells, even at power densities as low as 0.5 W/ cm2 and 1 W/cm2, respectively. Deep photoluminescence around 0.8 eV and luminescence due to D3 dislocations at 0.94 eV were not observed under any excitation conditions. © 1996 American Institute of Physics.

Notes: Gallium arsenide (GaAs) encapsulated at 450 °C with thin films of amorphous silicon has been annealed at temperatures up to 1050 °C and the resulting polysilicon (poly-Si)/GaAs interfaces investigated with secondary ion mass spectroscopy, Rutherford backscattering, and transmission electron microscopy. Little or no interdiffusion is detected at undoped Si/GaAs interfaces whereas Si diffuses from P- or As-doped Si to depths as great as 550 nm in the GaAs after 10 s at 1050 °C. The flux of Si into the GaAs is correlated with the flux of Ga and As into the Si and both increase with increases in the dopant concentration of the Si. The diffusion of other Si dopants into the GaAs, including P and In, is also detected. This enhanced diffusivity of Si, P, and In in GaAs results from the diffusion of point defects into the GaAs created by the diffusion of the Ga and As into the encapsulant. Numerical simulations using position-dependent impurity diffusion coefficients predict that Si, P, and In diffusivities in GaAs at doped poly-Si interfaces are enhanced by factors of 104 above their respective intrinsic bulk equilibrium diffusivities, where known.

Notes: Single-crystal GexSi1−x/Si superlattices have been successfully fabricated using remote plasma-enhanced chemical vapor deposition, a novel low-temperature thin-film growth technique. Reflection high-energy electron diffraction, cross-sectional transmission electron microscopy (XTEM), plan view TEM, x-ray-diffraction, and secondary-ion mass spectroscopy techniques have been applied to study the crystallographic properties of the superlattice structures. Arrays of dislocation lines, which are either parallel or perpendicular to each other, have been observed in the superlattices for those cases in which the total layer thickness exceeds the critical layer thickness. The location, orientation, and Burgers vectors of the misfit dislocation lines have been analyzed. Possible mechanisms of the generation of the misfit dislocations are also discussed.

Notes: Electron transport in quantum well modulation δ doped on either the normal or the inverted side has revealed the major cause of the long-puzzling inferior transport characteristics of the inverted interface. For growth conditions optimized for best transport with normal-side doping, we find migration of the Si dopant toward the inverted interface during growth to be the primary reason for the reduced inverted well mobility. This new understanding has allowed us to grow modulation-doped inverted quantum wells of unprecedented quality having electron mobilities as high as 2.4×106 cm2/V s at 4.2 K and 3.0×106 cm2/V s at 1.0 K.

Notes: Results are given from the first comprehensive and complementary measurements using the final production U.S. Common Long Pulse Ion Sources mounted on both the TFTR neutral beam test beamline and the TFTR neutral beam injection system, with actual tokamak experimental conditions, power systems, controls, and operating methods. The set of diagnostics included water calorimetry, thermocouples, vacuum ionization gauges, photodiodes, neutron, gamma-ray, and charged particle spectroscopy, optical multichannel analysis, charge exchange spectroscopy, Rutherford backscatter spectroscopy, and implantation/secondary ion mass spectroscopy. These systems were used to perform complementary measurements of neutral beam species, impurities, spatial divergence, energy dispersion, pressure, and reionization. The measurements were performed either in the neutralizer region, where the beam contained both ions and neutrals, or in the region of the output neutral beam. The average of the neutral particle ratios in the range from 80 to 114 keV is D0[E]:D0[E/2]:D0[E/3]=53(5):27(4):20(4), where the quantities in parentheses are the average experimental uncertainties.The corresponding neutral power ratio is P0[E]:P0[E/2]:P0[E/3]=72(9):19(3):9(2). The half widths (1/e) in the horizontal plane for the full-, half-, and third-energy components were 0.26°, 0.34°, and 0.42°, respectively. The dispersions of the full-, half-, and third-energy components were 1.20 keV, 2.35 keV, and 2.26 keV, respectively. The carbon impurity concentration in a 80 keV D0 beam was not greater than 2×10−4 per D0 beam particle, and exhibited an apparent acceleration state of C+. The oxygen impurity concentration was less than 5×10−4 per D0 beam particle, and exhibited an apparent acceleration state of O+. A variety of vacuum conditions were observed depending on the operating conditions. Typically, pressures in the transition ducts were in the range from 0.3 to 0.7×10−5 Torr at the beginning of injection pulses, and reionized power losses were in the range from 0.75% to 1.5% of incident power. At the end of injection pulses, pressures in the transition ducts were in the range from 0.6 to 2×10−5 Torr and reionized power losses were in the range from 2% to 6% of incident power. This work describes generic results, new apparatus, and advances in measurement techniques for the optimization of tokamak neutral beam heating operations and the analysis of neutral beam heated plasmas.

Notes: The depth profiles measured by secondary-ion mass spectrometry of 56 MeV oxygen ions implanted into Si, GaAs, and InP are reported. Most of the oxygen is contained within a sharp (full width at half maximum ∼2 μm) non-Gaussian profile centered at ∼31 μm in GaAs, ∼36 μm in InP, and ∼46 μm in Si, with the distribution skewed towards greater depths. The experimental projected ranges appear to be 10% larger than theoretical predictions. Changes in the electrical, optical, and structural properties of the material were measured by transmission electron microscopy (TEM), photoluminescence, and spreading resistance profiling. In the as-implanted Si, the maximum perturbation in the electrical properties occurs at ∼37 μm. No defects are visible by TEM in any of the as-implanted semiconductors for oxygen ion doses of 1.35×1015 cm−2 but the photoluminescent intensity in GaAs and InP is reduced by more than an order of magnitude as a result of this type of implantation.

Notes: The pulsed laser thin-film deposition process can enable preparation of thin films of complex composition with good control over the film stoichiometry. The film compositions are similar to that of the target pellet and as a consequence this technique appears to be an ideal method for preparing high Tc thin films on a variety of substrates.The factors which contribute to this beneficial phenomenon have been explored by a laser ionization mass spectrometry (LIMS) and a post ablation ionization (PAI) neutral velocity analysis technique in order to determine the mass and velocities of the laser ejected material. In addition, x-ray absorption measurements on films deposited onto substrates at room temperature were performed in order to identify the presence of short-range crystalline order in the films. Both of these studies rule out the ejection of stoichiometric clusters of material from the pellet during the laser ablation/deposition process. Instead, binary and ternary suboxides are emitted from the target pellet. These suboxides most likely have unit sticking coefficient to the substrate which could contribute to the preservation of the film stoichiometry. The velocity distribution of several neutral species (e.g., BaO) indicates that particles have energies of several eV. Thus the effective temperatures of the emitted species are ∼15×103 K, and these energetic particles may facilitate growth of the crystalline films at low substrate temperatures.

Notes: Low-temperature growth processes are needed in order to fully exploit the potential of GexSi1−x/Si heterostructures. Remote plasma-enhanced chemical vapor deposition has been successful for silicon homoepitaxy at substrate temperatures as low as 150 °C. We report the growth of GexSi1−x/Si heterostructures with values of x between 0.07 and 0.73, and at substrate temperatures of 305 and 450 °C. The films grown at 450 °C have excellent crystallinity, low defect densities, and very abrupt interfaces, while films grown at 305 °C have degraded crystallinity.