Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
75 (1999), S. 519-521
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
An infrared (IR) monitoring system has been developed for the detection and characterization of hydrocarbon contamination on 300 mm (12 in.) Si wafer surfaces. IR propagates through the Si wafer, internally reflecting about 600 times, which enables us to detect a trace of organic contamination on the wafer surface. The present system allows for the detection of hydrocarbon contamination on 300 mm Si wafer surfaces with a contamination level of below 1011 carbon atoms/cm2. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.124434
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