Publication Date:
2014-11-11
Description:
The properties of multilayer exfoliated MoTe 2 field-effect transistors (FETs) on SiO 2 were investigated for channel thicknesses from 6 to 44 monolayers (MLs). All transistors showed p -type conductivity at zero back-gate bias. For channel thicknesses of 8 ML or less, the transistors exhibited ambipolar characteristics. ON/OFF current ratio was greatest, 1 × 10 5 , for the transistor with the thinnest channel, 6 ML. Devices showed a clear photoresponse to wavelengths between 510 and 1080 nm at room temperature. Temperature-dependent current-voltage measurements were performed on a FET with 30 layers of MoTe 2 . When the channel is turned-on and p -type, the temperature dependence is barrier-limited by the Au/Ti/MoTe 2 contact with a hole activation energy of 0.13 eV. A long channel transistor model with Schottky barrier contacts is shown to be consistent with the common-source characteristics.
Print ISSN:
0003-6951
Electronic ISSN:
1077-3118
Topics:
Physics
Permalink