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  • 1
    Electronic Resource
    Electronic Resource
    Wet etching of GaAs using synchrotron radiation x rays (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3033-3040 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The results of room-temperature wet etching of GaAs using synchrotron-radiation x rays are described. Under x-ray illumination, etching occurs on the n-GaAs surface in contact with an acid or base solution or even deionized water. The etching process is studied as functions of the electrolytes, their concentration, semiconductor doping level, and x-ray intensity and energy. The etching mechanism is determined to be primarily electrochemical in nature, but the x-ray radiation chemistry plays a role in the etching. Smoothly etched surfaces are achievable with a root-mean-square surface roughness of 0.7–2.0 nm. We also found that the etching rate increases substantially with the ratio of the sample size to the x-ray exposure size. This is accounted for by the rate-limiting effect on the charge transfer across the semiconductor-electrolyte junction. The chemistry of etched surfaces is studied using x-ray photoelectron spectroscopy and compared to that of as-received surfaces. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1345859
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  • 2
    Electronic Resource
    Electronic Resource
    X-ray welding of metal-matrix composites (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 2550-2553 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present the first results of use of the high power x-rays from an insertion device beamline at the Advanced Photon Source for welding. X-rays with energies between 3 and 200 keV and power densities greater than 10 000 W/cm2 can penetrate deeply into most materials and thus can be used as volumetric heating sources. In this article we show results of bead-on-plate welds of a 3.3-mm-thick Al/Al2O3 metal-matrix composite and discuss results obtained for other materials. The potential of x-rays for welding is also discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148159
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  • 3
    Electronic Resource
    Electronic Resource
    High-resolution determination of the stress in individual interconnect lines and the variation due to electromigration (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1614-1622 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large tensile stresses usually exist in metallic interconnect lines on silicon substrates as a result of thermal mismatch. When a current is subsequently passed any divergence of atomic flux can create superimposed stress variations along the line. Together, these stresses can significantly influence the growth of voids and therefore affect interconnect reliability. In this work, a high-resolution (∼2 μm) optical spectroscopy method has been used to measure the localized stresses around passivated aluminum lines on a silicon wafer, both as-fabricated and after electromigration testing. The method is based on the piezospectroscopic properties of silicon, specifically the frequency shift of the Raman line at 520 R cm−1. By focusing a laser beam at points adjacent to the aluminum lines, the Raman signal was excited and collected. The stresses in the aluminum lines can then be derived from the stresses in the silicon using finite element methods. Large variations of stress along an electromigration-tested line were observed and compared to a theoretical model based on differences in effective diffusivities from grain to grain in a polycrystalline interconnect line. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360255
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  • 4
    Electronic Resource
    Electronic Resource
    Microscopic chemical state identification of a silicon-carbide fiber by soft x-ray photoabsorption spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 2389-2391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical states of a 140 μm silicon carbide fiber are determined by soft x-ray photo-absorption spectroscopy, using a magnetic projection photoelectron microscope, performed on the surface obtained by fracturing. The spectrum of the carbon core of the fiber has prominent π* and σ* resonance peaks and is very similar to that measured on highly oriented pyrolitic graphite, indicating a graphitic nature of the carbon core. The spectrum of the silicon carbide coating of the fiber reveals similar features to those of single-crystal silicon carbide, indicating that this coating is in the crystalline or polycrystalline phase. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.118881
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  • 5
    Electronic Resource
    Electronic Resource
    Synchrotron-radiation-induced anisotropic wet etching of GaAs (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2274-2276 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A room-temperature photoenhanced chemical wet etching process for n-type GaAs using x rays from a synchrotron radiation source is described. HNO3:H2O was used as the etching solution. This process produces smoothly etched surfaces on n-GaAs with a root-mean-square surface roughness of 0.7–2.0 nm, which compares favorably to the unetched surface roughness (0.4 nm). Dependence of the etching rate on x-ray intensity and energy, solution concentration, and semiconductor doping type are reported. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124988
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  • 6
    Electronic Resource
    Electronic Resource
    Sample size effect in photoelectrochemical etching of n-GaAs (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1319-1321 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A sample size effect on the etching rate in the photoelectrochemical etching of n-GaAs is demonstrated using synchrotron radiation x rays as the light source. It is shown that the etching rate increases significantly with the ratio of sample size to x-ray illuminated area. The rate-limiting effect on the charge transfer across the semiconductor–electrolyte junction is found to account for the phenomenon. It is also found that the etching rate relates to the nonilluminated area with a rather simple function. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1289908
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  • 7
    Electronic Resource
    Electronic Resource
    Synchrotron-radiation-induced, selective-area deposition of gold on polyimide from solution (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2014-2016 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoinduced, selective-area deposition of gold films on polyimide from gold salt solution using synchrotron radiation x rays is described. A film growth rate as high as 40 nm/min is obtained. For thickness 〈50 nm, the films consist of nanograins with a grain size of about 200 nm. For thicker films, gold deposit forms a ramified morphology on top of the nanograin film. The change in morphology is discussed in terms of the change in the yield of the photoelectrons generated by x rays as a function of growth. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126239
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  • 8
    Electronic Resource
    Electronic Resource
    Crystallization and preliminary X-ray analysis of luffaculin, a ribosome-inactivating protein from sponge-gourd seeds (2000)
    Copenhagen : International Union of Crystallography (IUCr)
    Acta crystallographica 56 (2000), S. 185-186 
    Details
    ISSN: 1399-0047
    Source: Crystallography Journals Online : IUCR Backfile Archive 1948-2001
    Topics: Chemistry and Pharmacology , Geosciences , Physics
    Notes: Luffaculin is a ribosome-inactivating protein. Crystals suitable for X-ray diffraction were first obtained using the hanging-drop vapour-diffusion method. X-ray studies show that the crystals belong to space group C2, with unit-cell parameters a = 89.90, b = 59.82, c = 55.18 Å, β = 120.81°, and have one molecule in the crystallographic asymmetric unit. The crystals diffract X-rays to at least 2.0 Å resolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1107/S0907444999014110
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  • 9
    Electronic Resource
    Electronic Resource
    Functional properties of PDIA from Aspergillus niger in renaturation of proteins (2005)
    Oxford, UK : Blackwell Publishing Ltd
    FEMS microbiology letters 245 (2005), S. 0 
    Details
    ISSN: 1574-6968
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Biology
    Notes: Functional properties of protein disulfide isomerase A (PDIA) from Aspergillus niger were investigated using ribonuclease A, glyceraldehyde 3-phosphate dehydrogenase (GAPDH) and prochymosin as substrates. PDIA was shown to function as an isomerase catalyzing the refolding of denatured and reduced ribonuclease A. PDIA also exhibited trx-independent chaperone activity preventing the aggregation of reduced, denatured GAPDH, an enzyme lacking disulfide bonds. Both isomerase activity and chaperone function of PDIA were essential for the efficient refolding of the reduced, denatured prochymosin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/j.femsle.2005.03.026
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  • 10
    Electronic Resource
    Electronic Resource
    Effects of Molding Pressure on the Microstructure and Mechanical Properties of 2D-C〈sub〉f〈/sub〉/SiC Composites by PIP Routes (2008)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 368-372 (Feb. 2008), p. 1025-1027 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Carbon fiber cloth reinforced silicon carbide (2D-Cf/SiC) composites were prepared throughpolycarbosilane(PCS) /divinylbenzene(DVB) pyrolysis with SiC as inactive filler. Effects of the moldingpressure on the microstructure and mechanical properties of 2D-Cf/SiC composites were investigated.With increasing molding pressure from 0MPa to 3MPa, the fiber volume fraction of the composites wasincreased. As a result, the strengths of the composites were enhanced. But when the molding pressureexceeded 3MPa, SiC particles would damage the carbon fibers seriously. Therefore, although the fiberfraction of the composites was increased further, the flexural strengths of the composites were decreased.It was found that the composites fabricated with the molding pressure of 3 MPa exhibited highest flexuralstrength, reached 319.4 MPa
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.1025.pdf
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