Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
86 (1999), S. 1382-1387
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The pseudodielectric-function spectra, ε(E)=ε1(E)+iε2(E), of amorphous (a-) selenium (Se) in the 1.2–5.2 eV photon-energy range at room temperature were measured by spectroscopic ellipsometry. The a-Se films investigated were deposited by vacuum evaporation in a base pressure of 2×10−6 Torr on Si(100) substrates at room temperature. The ε2(E) spectrum showed only a broad peak at ∼4 eV. Such a structureless feature is known to be typically observed in amorphous semiconductors. An ex situ atomic-force-microscopy image confirmed a microscopically flat surface (root-mean-square roughness of ∼0.4 nm) with relatively sharp cones in spots. The Bruggeman effective-medium-approximation analysis suggested that the correction for this microroughness is very small (Δε1,2〈0.2). The present ε(E) data and previously published data were used for the modeling of the optical constants of a-Se over the 0–15 eV photon-energy range. Dielectric-related optical constants, such as the complex refractive index, absorption coefficient, and normal-incidence reflectivity, of a-Se were also presented. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.370898
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