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  • 1
    Call number: SR 90.0090(15)
    In: Veröffentlichungen des Geodätischen Instituts der Rheinisch-Westfälischen Technischen Hochschule Aachen
    Type of Medium: Series available for loan
    Pages: 72 S.
    Series Statement: Veröffentlichung des Geodätischen Instituts der Rheinisch-Westfälischen Technischen Hochschule Aachen 15
    Language: German
    Location: Lower compact magazine
    Branch Library: GFZ Library
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  • 2
    Publication Date: 2023-07-19
    Description: 〈title xmlns:mml="http://www.w3.org/1998/Math/MathML"〉Abstract〈/title〉〈p xmlns:mml="http://www.w3.org/1998/Math/MathML" xml:lang="en"〉During the last decades, the Baltic Sea has been among the fastest warming seas in the world. The warming is mainly driven by increasing air temperatures but deeper water layers can also be warmed by lateral advection of heat. By analyzing a 159 years long (1850–2008) hindcast simulation of the Baltic Sea, we link the exceptionally strong bottom water warming in the western Baltic Sea to a shift in the seasonality of saltwater inflows from the North Sea to the Baltic Sea. Over the model period, warm summer and early autumn inflows have increased while cold winter inflows have decreased. Sensitivity experiments reveal that these changes were partly driven by a shift in river runoff seasonality. The strong warming could lead to faster oxygen depletion in the affected layers and thus have ecological consequences.〈/p〉
    Description: Plain Language Summary: The Baltic Sea is home to various marine and freshwater species and an important economic factor for the surrounding countries. Like other seas, the Baltic Sea is getting warmer due to climate change. The water at the surface warms especially fast because it takes up heat from the warming atmosphere. After some time, temperatures also increase in deeper layers. However, some deep parts in the western Baltic Sea are warming even faster than the sea surface. In our study, we investigate if the exceptional warming can be explained by an increase in warm saltwater inflows from the North Sea. Hence, we use a model simulation of the Baltic Sea for over 150 years to compare long time series of warm inflows and the temperatures in the deep layers of the western Baltic Sea. We find a strong correlation. Thus, we can link the exceptional warming in the deep layers of the western Baltic Sea during the last decades to an increase in warm inflows. The warming has ecological consequences since in warmer water, the oxygen is consumed faster and the deep water layers of the Baltic Sea are suffering from low oxygen concentrations.〈/p〉
    Description: Key Points: Summer and early autumn salt import into the Baltic Sea increased significantly since 1851 compared to the annual salt import.〈/p〉〈/list-item〉 〈list-item〉 〈p xml:lang="en"〉Salt import between June and October is highly correlated with the annual sub‐thermocline temperature maximum in the western Baltic Sea.〈/p〉〈/list-item〉 〈list-item〉 〈p xml:lang="en"〉The shift in inflow seasonality was partly caused by seasonal changes in river runoff.〈/p〉〈/list-item〉 〈/list〉 〈/p〉
    Description: https://doi.io-warnemuende.de/10.12754/data-2023-0006
    Description: https://doi.io-warnemuende.de/10.12754/data-2018-0004
    Keywords: ddc:551.46 ; Baltic Sea ; saltwater inflows ; salinity dynamics ; global warming ; water temperature ; regional climate variability
    Language: English
    Type: doc-type:article
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  • 3
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 81 (1977), S. 712-718 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 93 (1989), S. 7726-7729 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present results of a comparative study of the time-dependent luminescence properties of multiple quantum well structures with varying barrier widths which are embedded in the active area of a light-emitting device. The carrier kinetics is investigated by different experimental approaches: Cathodoluminescence and electroluminescence experiments where excitation is on/off-modulated for the purpose of time-resolved measurements and time-resolved electroluminescence experiments in the small signal regime which allow for observation of the carrier kinetics under flatband conditions. Due to the exact determination of the excess carrier density the latter technique provides a sensitive tool for a precise estimation of the mono- and bimolecular recombination coefficients. Comparison with light output data yields radiative and nonradiative parts. We find that coupling of quantum wells dramatically favors nonradiative interface recombination as expected from a theoretical model accounting for the superlattice wavefunctions. On the other hand, the bimolecular recombination rate remains unaltered even when the barrier width is lowered from 18 to 0.9 nm. In contrast, on/off modulated experiments reveal that luminescence decay is strongly influenced by carrier drift out of the active area. A barrier width dependent carrier mobility in growth direction accounts for these results if phonon assisted hopping rather than Bloch transport is presumed. Thus, an estimation of device quality of quantum well light emitters by conventional time-resolved cathodo- (or photo-) luminescence experiments is found to be possible if internal field induced carrier drift processes are taken into account.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2131-2135 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nonabsorbing etched mirror structure for AlGaAs single-quantum-well graded-refractive-index separate-confinement heterostructure ridge lasers is analyzed with respect to mirror coupling coefficient, threshold current penalty, and far-field pattern. Measurements of the mirror temperature showed a reduction from 50 to 20 K at 30 mW optical power depending on the degree of overlap of the optical intensity with the absorbing bent-waveguide profile. Pulsed catastrophic optical damage power levels up to 400 mW and a thermally saturated cw power of 165 mW with single-mode operation up to 80 mW have been achieved. Lifetime measurements at 40 mW constant optical power indicated degradation rates ≤10−5/h comparable to AlGaAs lasers with cleaved and coated mirrors.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    The @photogrammetric record 11 (1984), S. 0 
    ISSN: 1477-9730
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying
    Notes: The author reviews the historical background of the analytical orthoprojector and examines the design requirements for this instrument. The construction and performance of the Zeiss (Oberkochen)Z2 orthoprojector are described and an assessment is made of its practical advantages.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 2016-2018 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the sidewall recombination in dry-etched GaAs/GaAlAs wires with widths between 12 μm and 300 nm using picosecond spectroscopy. The wires were fabricated with electron beam lithography and different reactive ion etching processes. The excitonic lifetimes decrease strongly with decreasing wire widths due to sidewall recombination. Using a model calculation to fit the experimentally observed width dependence of the lifetimes the surface recombination velocity is determined to be S=2×106 cm/s at 50 K. S increases with temperature and is independent of the etching process.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2611-2613 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Indium composition variations in strained InGaAs/GaAs quantum wells grown on nonplanar substrates by molecular beam epitaxy have been analyzed by spatially and spectrally resolved low-temperature cathodoluminescence. For our growth conditions, the In adatom migration length on (100) facets has been determined to be ∼25 μm. A maximum relative increase of In incorporation of (approximately-equal-to)6% on (100) ridges is observed and is found to be strain independent (In composition) for quantum wells nominally 35 and 70 A(ring) thick with In composition of 0.10–0.22. Significantly asymmetric indium adatom migration is observed between adjacent (100) facets for ridges and grooves formed with (111)A and (311)A multifaceted sidewalls, indicating that multifaceting kinetically inhibits adatom migration. For structures designed for one-step growth of index-guided injection lasers with built-in nonabsorbing waveguides, we show that differences greater than 80 meV in the effective band gap of a 70 A(ring) quantum well can be achieved between the gain region and the nonabsorbing waveguide without relaxing the strain.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1059-1061 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a high-power AlGaAs single quantum well graded-index separate confinement heterojunction laser grown by molecular epitaxy over channeled substrates. Fundamental mode operation up to 130 mW for reflection modified devices has been achieved at a high differential quantum front-facet efficiency of 81%. This device structure allows extremely low threshold currents to 6 mA for power lasers due to the incorporation of lateral current blocking pn junction by crystallographic plane-dependent doping of amphoteric dopants. We obtained a very high-power continuous-wave fundamental mode operation of this type of laser at extremely low threshold currents and very high overall efficiency of more than 50%. This laser shows considerable potential for applications in optical storage and printer technology.
    Type of Medium: Electronic Resource
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