ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Er3+-doped materials, either crystals or glasses, are shown to act as passive stabilizers for wide gain spectrum lasers of the F-center NaCl: OH− type and of the InGaAsP semiconductor type. The wavelength is demonstrated to be stabilized against perturbations originating from pumping intensity and temperature variations. A thermal stability coefficient of 0.14 A(ring)/°C is demonstrated. In the InGaAsP laser case, single-mode operation, independent of possible extra Fabry–Perot etalon modes, is achieved, with rejection of adjacent modes by 25 dB. The possibility of active stabilization in the case of an inhomogeneous gain spectrum laser is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347579
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