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  • 1
    Electronic Resource
    Electronic Resource
    Molecular beam epitaxy growth and characterization of CdxHg1−xTe (0.4〈x〈1) based quantum wells (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1774-1781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CdxHg1−xTe epilayers and CdxHg1−xTe/CdyHg1−yTe quantum well heterostructures have been grown by molecular beam epitaxy. The various parameters of the growth technique have been carefully optimized: control of the thickness by the observation of the oscillations of the reflection-high-energy electron diffraction, the alloy composition by measuring the Cd sticking coefficient in our growth procedure, and the quality of the interfaces by performing transmission electron microscopy. The photoluminescence spectra at 5 K of thick CdxHg1−xTe epilayers are dominated by bound exciton recombination below the fundamental band gap Eg. By contrast, the main emission in the quantum wells photoluminescence spectra is due to an intrinsic recombination of the confined carriers in their respective ground state. The influence of CdxHg1−xTe well thickness and the CdyHg1−yTe barrier composition of this quantum well transition energy are presented.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351213
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  • 2
    Electronic Resource
    Electronic Resource
    Assessment of the structural quality of CdTe/Cd1−xZnxTe strained superlattices by high-resolution x-ray diffraction and photoluminescence studies (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6229-6233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a detailed analysis of x-ray double-diffraction rocking-curve measurements and low-temperature photoluminescence spectroscopy of (001) CdTe-CdxZn1−xTe strained-layer superlattices grown by molecular-beam epitaxy. The presence of very sharp satellite reflections demonstrate smooth interfaces with a well-defined modulation of both composition and perpendicular stress. Using a kinematical step model, the thickness, strain, and composition of the wells and the barriers are extracted. It is shown that fluctuations of 1 monolayer of the average period can be reproducibly obtained in such superlattices, in excellent agreement with the in situ reflection of high-energy electron diffraction oscillations measurements. The structural perfection of these superlattices is confirmed by the optical spectra which exhibit sharp excitonic transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346887
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  • 3
    Electronic Resource
    Electronic Resource
    Indium-modified growth kinetics of cubic and hexagonal GaN in molecular beam epitaxy (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4322-4325 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The kinetics changes in the growth of GaN induced by the presence of In segregated on the surface have been investigated in situ by using reflection high energy electron diffraction intensity oscillations. Two types of surfaces have been studied, namely, Ga-polar (0001) wurtzite, and (001) zinc blende. It has been found that In influenced both Ga and N surface kinetics, leading to a change in the growth rate associated with a change in the amount of Ga and N effectively available for the GaN growth. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371364
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  • 4
    Electronic Resource
    Electronic Resource
    Zero-dimensional excitons in CdTe/ZnTe nanostructures (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4936-4943 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin CdTe layers embedded in ZnTe matrix grown by atomic layer epitaxy have been studied by time resolved spectroscopy and spatially resolved spectroscopy. The presence of Cd-rich dotlike islands in these CdTe nanostructures is shown by both atomic force microscopy and high resolution transmission electron microscopy. Zero-dimensional nature of excitons is shown both by the temperature dependence of the decay time and observation of sharp exciton lines in microphotoluminescence spectra. Zero-dimensional excitons probed by microphotoluminescence present a doublet structure linearly polarized along two orthogonal directions. This doublet structure is attributed to bright heavy-hole exciton states split by the local asymmetry of the localization potential. Reversible spectral shifts in the emission of some single quantum dots are observed on a time scale of hundreds of milliseconds. These small shifts can be attributed to the Stark effect caused by fluctuating electric fields and can significantly affect time-integrated transition linewidths. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436560
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  • 5
    Electronic Resource
    Electronic Resource
    Atomic-layer epitaxy of GaN quantum wells and quantum dots on (0001) AlN (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5498-5500 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We show that a dynamically stable Ga film is formed on (0001) AlN in a large range of Ga fluxes at a substrate temperature of 740 °C. This feature allows for atomic layer epitaxy (ALE) of GaN on AlN by alternate exposure to Ga and N flux. We show that, at a growth temperature of 740 °C, one ALE cycle leads to the formation of a two-dimensional GaN layer, whereas further cycles lead to the formation of GaN quantum dots following a Stranski–Krastanov growth mode. This behavior is confirmed by atomic force microscopy, transmission electron microscopy, and cathodoluminescence. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1458049
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  • 6
    Electronic Resource
    Electronic Resource
    Atomic layer epitaxy of CdTe and MnTe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3035-3041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic deposition techniques are investigated for binary semiconductors of the telluride family, namely CdTe and MnTe. An original method for directly determining the CdTe atomic layer epitaxy (ALE) growth rate—in monolayers/cycle—is proposed, consisting in monitoring the reflection high-energy electron diffraction (RHEED) sublimation intensity oscillations of an ALE grown CdTe layer deposited on a MgTe buffer layer. The ALE CdTe autoregulated growth rate at 0.5 monolayer/cycle (in the substrate temperature domain between 260 and 290 °C) is accounted for on the basis of an atomic model which relies on the alternating c(2×2) Cd and (2×1) Te surface reconstructions during the ALE cycle. RHEED studies on MnTe atomic deposition, together with x-ray diffraction and transmission electron microscopy on ALE grown CdTe/MnTe superlattices reveal that all deposited Mn atoms are incorporated so that no autoregulated growth can be achieved. Furthermore, less than one or just one monolayer of Mn must be sent on the surface per ALE cycle to obtain well controlled superlattices with abrupt interfaces. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361243
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  • 7
    Electronic Resource
    Electronic Resource
    Low-level photomodulation of exciton absorption in CdTe single quantum wells (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1196-1202 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An optical nonlinearity at very low light levels in a CdTe/CdZnTe single quantum well at 4 K is reported. Excitation above the band gap produces a significant decrease in the heavy-hole exciton absorption at intensities down to μW/cm2. The dependence of the change in absorption on the pump intensity is sample dependent and is strongly sublinear. At low pump intensity the recovery of the absorption after switching off the pump is exponential with a time constant of about 150 ms, which is nearly independent of pump intensity up to ∼3 mW/cm2. Above 30 μW/cm2 an additional process on a time scale ∼100 μs is observed. The rise time after turning on the pump varies inversely as pump intensity. It is shown that the nonlinearity arises from the presence of excess electrons in the CdTe quantum well, which reduce the excitonic absorption by phase-space filling. These electrons are charge compensated by holes trapped in the barrier. The time and intensity dependence of the optical nonlinearity can be fitted by a kinetic model of the trapping, in which a range of traps with different recovery times participates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360357
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  • 8
    Electronic Resource
    Electronic Resource
    CdTe/MgTe heterostructures: Growth by atomic layer epitaxy and determination of MgTe parameters (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6257-6265 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atomic layer epitaxy (ALE) is investigated for the binary semiconductor MgTe. Reflection high-energy electron-diffraction studies on MgTe atomic deposition, together with x-ray diffraction, high-resolution transmission electron microscopy, and photoluminescence experiments on ALE-grown CdTe/MgTe superlattices are reported. They reveal that an autoregulated growth at 0.7±0.1 MgTe monolayer/ALE cycle can be achieved in a substrate temperature range between 260 and 300°C. New values of the zinc-blende MgTe lattice parameter, aMgTe=6.420 ±0.005 A(ring), of the ratio of the elastic coefficients 2c12c11 (MgTe)=1.06, and of the 300 K MgTe band gap, EG=3.5 eV, are obtained by correlating x-ray-diffraction and optical results. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363714
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  • 9
    Electronic Resource
    Electronic Resource
    Strain mapping of ultrathin epitaxial ZnTe and MnTe layers embedded in CdTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 7310-7316 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-resolution electron microscopy is used to investigate the morphology of ultrathin pseudomorphic (001) ZnTe and MnTe strained layers grown in CdTe. Local distortions of the crystal lattice are measured directly on high-resolution images by use of image processing software. In the case of ZnTe/CdTe superlattices, the method yields the location of Zn within each place in the heterostructure and the total amount of Zn per period. For MnTe layers embedded in CdTe, one can deduce the atomic morphology of the interfaces which are shown to present a clear asymmetry.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356641
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  • 10
    Electronic Resource
    Electronic Resource
    Growth control of CdTe/CdZnTe (001) strained-layer superlattices by reflection high-energy electron diffraction oscillations (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 2733-2735 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used reflection high-energy electron diffraction (RHEED) and x-ray diffraction to study the growth of CdTe/Cd0.90 Zn0.10 Te (001) heterostructures by molecular beam epitaxy (MBE). A growth process involving an excess of Cd and growth interruptions at the well-barrier interfaces has been found necessary to observe strong and persistent RHEED oscillations during the epitaxy of quantum wells and superlattices. This method gives accurate in situ thickness measurements of all the layers during the growth of CdTe/Cd0.90 Zn0.10 Te superlattices, in good agreement with x-ray diffraction data. The sharpness of x-ray diffraction satellites confirms the high crystalline quality of the superlattices with a period fluctuation of less than one monolayer.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101938
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