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  • 1
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    Structural disorder of monomeric alpha-synuclein persists in mammalian cells (2016)
    Nature Publishing Group (NPG)
    Details
    Publication Date: 2016-01-26
    Description: Intracellular aggregation of the human amyloid protein alpha-synuclein is causally linked to Parkinson's disease. While the isolated protein is intrinsically disordered, its native structure in mammalian cells is not known. Here we use nuclear magnetic resonance (NMR) and electron paramagnetic resonance (EPR) spectroscopy to derive atomic-resolution insights into the structure and dynamics of alpha-synuclein in different mammalian cell types. We show that the disordered nature of monomeric alpha-synuclein is stably preserved in non-neuronal and neuronal cells. Under physiological cell conditions, alpha-synuclein is amino-terminally acetylated and adopts conformations that are more compact than when in buffer, with residues of the aggregation-prone non-amyloid-beta component (NAC) region shielded from exposure to the cytoplasm, which presumably counteracts spontaneous aggregation. These results establish that different types of crowded intracellular environments do not inherently promote alpha-synuclein oligomerization and, more generally, that intrinsic structural disorder is sustainable in mammalian cells.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Theillet, Francois-Xavier -- Binolfi, Andres -- Bekei, Beata -- Martorana, Andrea -- Rose, Honor May -- Stuiver, Marchel -- Verzini, Silvia -- Lorenz, Dorothea -- van Rossum, Marleen -- Goldfarb, Daniella -- Selenko, Philipp -- England -- Nature. 2016 Feb 4;530(7588):45-50. doi: 10.1038/nature16531. Epub 2016 Jan 25.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉In-Cell NMR Laboratory, Department of NMR-supported Structural Biology, Leibniz Institute of Molecular Pharmacology (FMP Berlin), Robert-Rossle Strasse 10, 13125 Berlin, Germany. ; Department of Chemical Physics, Weizmann Institute of Science, Rehovot 76100, Israel. ; Department of Molecular Physiology and Cell Biology, Leibniz Institute of Molecular Pharmacology (FMP Berlin), Robert-Rossle Strasse 10, 13125 Berlin, Germany.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/26808899" target="_blank"〉PubMed〈/a〉
    Keywords: Acetylation ; Cell Line ; Cytoplasm/chemistry/metabolism ; Electron Spin Resonance Spectroscopy ; HeLa Cells ; Humans ; Intracellular Space/*chemistry/*metabolism ; Neurons/cytology/metabolism ; Nuclear Magnetic Resonance, Biomolecular ; Protein Conformation ; alpha-Synuclein/*chemistry/*metabolism
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Published by Nature Publishing Group (NPG)
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  • 2
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    Fast evolving pair-instability supernova models: evolution, explosion, light curves (2016)
    Oxford University Press
    Details
    Publication Date: 2016-11-10
    Description: With an increasing number of superluminous supernovae (SLSNe) discovered, the question of their origin remains open and causes heated debates in the supernova community. Currently, there are three proposed mechanisms for SLSNe: (1) pair-instability supernovae (PISNe), (2) magnetar-driven supernovae and (3) models in which the supernova ejecta interacts with a circumstellar material ejected before the explosion. Based on current observations of SLSNe, the PISN origin has been disfavoured for a number of reasons. Many PISN models provide overly broad light curves and too reddened spectra, because of massive ejecta and a high amount of nickel. In the current study, we re-examine PISN properties using progenitor models computed with the genec code. We calculate supernova explosions with flash and light-curve evolution with the radiation hydrodynamics code stella . We find that high-mass models (200 and 250 M ) at relatively high metallicity ( Z  = 0.001) do not retain hydrogen in the outer layers and produce relatively fast evolving PISNe Type I and might be suitable to explain some SLSNe. We also investigate uncertainties in light-curve modelling due to codes, opacities, the nickel-bubble effect and progenitor structure and composition.
    Print ISSN: 0035-8711
    Electronic ISSN: 1365-2966
    Topics: Physics
    Published by Oxford University Press
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  • 3
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    Origin of Shaker and KCNQ K+ channels [Neuroscience] (2015)
    National Academy of Sciences
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    Publication Date: 2015-03-04
    Description: We examined the origins and functional evolution of the Shaker and KCNQ families of voltage-gated K+ channels to better understand how neuronal excitability evolved. In bilaterians, the Shaker family consists of four functionally distinct gene families (Shaker, Shab, Shal, and Shaw) that share a subunit structure consisting of a voltage-gated...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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  • 4
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    Sustainability, Vol. 11, Pages 6027: Greenhouse Gas Emissions and Blue Water Use of Dutch Diets and Its Association with Health (2019)
    MDPI
    Details
    Publication Date: 2019
    Description: Food consumption patterns affect the environment as well as public health, and monitoring is needed. The aim of this study was to evaluate the Dutch food consumption patterns for environmental (greenhouse gas (GHG) emissions and blue water use) and health aspects (Dutch Healthy Diet index 2015), according to age, gender, and consumption moments. Food consumption data for 4313 Dutch participants aged 1 to 79 years were assessed in 2012 to 2016, by two non-consecutive 24-h recalls. The environmental impact of foods was quantified using a life cycle assessment for, e.g., indicators of GHG emissions and blue water use. The healthiness of diet, operationalized by the Dutch Healthy Diet index 2015, was assessed for 2078 adults aged ≥19 years. The average daily diet in the Netherlands was associated with 5.0 ± 2.0 kg CO2-equivalents of GHG emissions and 0.14 ± 0.08 m3 of blue water use. Meat, dairy and non-alcoholic beverages contributed most to GHG emissions, and non-alcoholic beverages, fruits, and meat to blue water use. More healthy diets were associated with a lower GHG emission and higher blue water use. Different associations of environmental indicators (GHG emissions and blue water use) with health aspects of diets need to be considered when aligning diets for health and sustainability.
    Electronic ISSN: 2071-1050
    Topics: Energy, Environment Protection, Nuclear Power Engineering
    Published by MDPI
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  • 5
    Electronic Resource
    Electronic Resource
    Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6242-6246 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures. We use low temperature Hall, Shubnikov–de Haas, and photoluminescence measurements. We observe that the electron density and mobility of the two-dimensional electron gas in the heterostructure is strongly reduced by the RIE process. After annealing the electron density fully recovers for both types of structures, whereas the electron mobility responds differently. While for the pseudomorphic AlGaAs/InGaAs/GaAs heterostructures thermal annealing restores the electron mobility completely, for the AlGaAs/GaAs heterostructures the electron mobility recovers only to 60% of the original value. This indicates that in the AlGaAs/GaAs heterostructures the structural damage induced by reactive ion etching is not fully removed by thermal annealing. This is confirmed by photoluminescence measurements at low temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355166
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  • 6
    Electronic Resource
    Electronic Resource
    Zero-dimensional states in submicron double-barrier heterostructures laterally constricted by hydrogen plasma isolation (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 158-160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352151
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  • 7
    Electronic Resource
    Electronic Resource
    Migration of Si in molecular-beam epitaxial growth of δ-doped GaAs and Al0.25Ga0.75As (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3766-3768 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the incorporation of Si δ doping during the molecular-beam epitaxial (MBE) growth of GaAs and Al0.25Ga0.75As using secondary-ion mass spectroscopy. At high substrate temperatures (≥580 °C) a significant and asymmetric broadening is observed in both GaAs and Al0.25Ga0.75As. This is due to the combined effect of thermal diffusion and migration towards the surface during MBE growth. This study points out that a low substrate temperature (≤540 °C) and a short time are required during MBE crystal growth to achieve confined δ doping.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346299
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  • 8
    Electronic Resource
    Electronic Resource
    Electrical transport in (100)CoSi2/Si contacts (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2525-2536 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed investigation of the electrical transport in (100) CoSi2/Si contacts is presented. The transport properties of epitaxial CoSi2 films, obtained both by ion-beam synthesis and by solid-state reaction of a Ti/Co bimetallic layer, are compared with the transport properties of conventional polycrystalline CoSi2 layers. The electrical resistivity, the magnetoresistance, and the Hall effect are measured on Hall bars for temperatures ranging from 1.2 to 300 K and magnetic fields up to 5 T. Very high values of the order parameter kFL0 are observed, indicating that the investigated samples are of very high purity and crystalline order. In addition, the electric transport at the CoSi2/Si interface is studied by current-voltage and capacitance-voltage measurements on Schottky diode structures for temperatures ranging from 173 to 333 K. Ideality factors close to unity are observed for the highest temperatures, for the lower temperatures the ideality factors are found to increase with decreasing temperatures. The observed temperature dependence of the ideality factor and the Schottky barrier height can be attributed to Schottky barrier inhomogeneities. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358782
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  • 9
    Electronic Resource
    Electronic Resource
    A combined x-ray diffraction and Raman analysis of Ni/Au/Te-ohmic contacts to n-GaAs (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2055-2060 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ohmic contact formation mechanism in furnace alloyed Ni/Au/Te/Au/GaAs structures is investigated by the combined application of x-ray diffraction and Raman spectroscopy. It was found that the Ni top layer promotes a more uniform dissociation of the GaAs substrate by the formation of a ternary Nix GaAs phase in the initial stages of contact formation (T=350 °C). At an alloy temperature T=550 °C, which induces low resistive electrical behavior, the formation of epitaxial Ga2Te3 was observed, indicating the formation of a Ga2Te3/GaAs heterojunction. After alloying at 600 °C, Ga2Te3 was still found to be present in the contact zone. In addition, evidence for a regrowth of GaAs crystallites could be derived from an increase of the intensity ratio ITO/ILO of the GaAs Raman signals. No indication for the presence of a high density of shallow donors ((approximately-greater-than)1019 cm−3) in the GaAs top layers could be adduced.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356308
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  • 10
    Electronic Resource
    Electronic Resource
    Anomalous electrical behavior related to the formation of TeAsV−Ga defect complexes in laser mixed Au/Te/Au/GaAs structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1779-1781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The ohmic contact formation mechanism in pulsed laser beam mixed Au/Te/Au/GaAs structures has been investigated by 129I Mössbauer spectroscopy. Low-resistance, ohmic contact structures, on both n- and p-type GaAs, were found to be correlated to the formation of a high density of defect complexes consisting of tellurium atoms quasi-substitutional on arsenic sites with a gallium vacancy in the first neighbor shell. Correspondingly, the ohmic conduction is suggested to occur according to the amorphous heterojunction model, i.e., by a multi-step recombination-tunneling process.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106198
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