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  • 1
    Publication Date: 2016-06-15
    Description: Invariant natural killer T (iNKT) cells are a subset of innate-like T cells that act as important mediators of immune responses. In particular, iNKT cells have the ability to immediately produce large amounts of IFN-γ upon activation and thus initiate immune responses in various pathological conditions. However, molecular mechanisms that...
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
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  • 2
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    Society of Exploration Geophysicists (SEG)
    Publication Date: 2015-01-21
    Description: Near-surface characterization has now gained significance among exploration geophysicists, and many methods are being proposed to retrieve the 2D structures of shallow soils. Because most of these methods are based on the modal inversion of the surface waves, they can only be applied to laterally homogeneous or smoothly heterogeneous soil models. We have developed a time-domain waveform inversion method for 2D near-surface exploration that offers an alternative approach to existing surface-wave techniques for layered soils with a flat surface. Our method directly fits the input Rayleigh waveforms to retrieve the 2D soil structure without need of any modal identification, allowing the inversion of soil models that can be challenging with modal-inversion-based approaches. In our method, the forward problem formulated in the time domain is based on a 2.5D staggered-grid finite-difference scheme to simulate the P-SV wavefield; soil modeling was achieved by dividing soil layers into specific number of blocks with discontinuous interfaces. The inversion strategy depends on attributing suitable values for the interface depth and S-wave velocity for each block to reconstruct a numerical soil model that fit the input waveforms. Because we cannot know the source signature during data acquisition, source deconvolution by a reference station is applied to observed and calculated waveforms to make a waveform inversion free of the source signature. Numerical experiments revealed that our method was able to sufficiently reconstruct soil structures with strong lateral velocity gradient or soils with a blind layer in noisy environments, using a single source and reasonable number of receivers. We also applied this method to real waveform data, and we succeeded in obtaining good correlation between the inverted 2D soil model and the existing borehole data.
    Print ISSN: 0016-8033
    Electronic ISSN: 1942-2156
    Topics: Geosciences , Physics
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  • 3
    Publication Date: 2010-08-14
    Description: Novae are thermonuclear explosions on a white dwarf surface fueled by mass accreted from a companion star. Current physical models posit that shocked expanding gas from the nova shell can produce x-ray emission, but emission at higher energies has not been widely expected. Here, we report the Fermi Large Area Telescope detection of variable gamma-ray emission (0.1 to 10 billion electron volts) from the recently detected optical nova of the symbiotic star V407 Cygni. We propose that the material of the nova shell interacts with the dense ambient medium of the red giant primary and that particles can be accelerated effectively to produce pi(0) decay gamma-rays from proton-proton interactions. Emission involving inverse Compton scattering of the red giant radiation is also considered and is not ruled out.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Fermi-LAT Collaboration -- Abdo, A A -- Ackermann, M -- Ajello, M -- Atwood, W B -- Baldini, L -- Ballet, J -- Barbiellini, G -- Bastieri, D -- Bechtol, K -- Bellazzini, R -- Berenji, B -- Blandford, R D -- Bloom, E D -- Bonamente, E -- Borgland, A W -- Bouvier, A -- Brandt, T J -- Bregeon, J -- Brez, A -- Brigida, M -- Bruel, P -- Buehler, R -- Burnett, T H -- Buson, S -- Caliandro, G A -- Cameron, R A -- Caraveo, P A -- Carrigan, S -- Casandjian, J M -- Cecchi, C -- Celik, O -- Charles, E -- Chaty, S -- Chekhtman, A -- Cheung, C C -- Chiang, J -- Ciprini, S -- Claus, R -- Cohen-Tanugi, J -- Conrad, J -- Corbel, S -- Corbet, R -- DeCesar, M E -- den Hartog, P R -- Dermer, C D -- de Palma, F -- Digel, S W -- Donato, D -- do Couto e Silva, E -- Drell, P S -- Dubois, R -- Dubus, G -- Dumora, D -- Favuzzi, C -- Fegan, S J -- Ferrara, E C -- Fortin, P -- Frailis, M -- Fuhrmann, L -- Fukazawa, Y -- Funk, S -- Fusco, P -- Gargano, F -- Gasparrini, D -- Gehrels, N -- Germani, S -- Giglietto, N -- Giordano, F -- Giroletti, M -- Glanzman, T -- Godfrey, G -- Grenier, I A -- Grondin, M-H -- Grove, J E -- Guiriec, S -- Hadasch, D -- Harding, A K -- Hayashida, M -- Hays, E -- Healey, S E -- Hill, A B -- Horan, D -- Hughes, R E -- Itoh, R -- Jean, P -- Johannesson, G -- Johnson, A S -- Johnson, R P -- Johnson, T J -- Johnson, W N -- Kamae, T -- Katagiri, H -- Kataoka, J -- Kerr, M -- Knodlseder, J -- Koerding, E -- Kuss, M -- Lande, J -- Latronico, L -- Lee, S-H -- Lemoine-Goumard, M -- Garde, M Llena -- Longo, F -- Loparco, F -- Lott, B -- Lovellette, M N -- Lubrano, P -- Makeev, A -- Mazziotta, M N -- McConville, W -- McEnery, J E -- Mehault, J -- Michelson, P F -- Mizuno, T -- Moiseev, A A -- Monte, C -- Monzani, M E -- Morselli, A -- Moskalenko, I V -- Murgia, S -- Nakamori, T -- Naumann-Godo, M -- Nestoras, I -- Nolan, P L -- Norris, J P -- Nuss, E -- Ohno, M -- Ohsugi, T -- Okumura, A -- Omodei, N -- Orlando, E -- Ormes, J F -- Ozaki, M -- Paneque, D -- Panetta, J H -- Parent, D -- Pelassa, V -- Pepe, M -- Pesce-Rollins, M -- Piron, F -- Porter, T A -- Raino, S -- Rando, R -- Ray, P S -- Razzano, M -- Razzaque, S -- Rea, N -- Reimer, A -- Reimer, O -- Reposeur, T -- Ripken, J -- Ritz, S -- Romani, R W -- Roth, M -- Sadrozinski, H F-W -- Sander, A -- Parkinson, P M Saz -- Scargle, J D -- Schinzel, F K -- Sgro, C -- Shaw, M S -- Siskind, E J -- Smith, D A -- Smith, P D -- Sokolovsky, K V -- Spandre, G -- Spinelli, P -- Stawarz, L -- Strickman, M S -- Suson, D J -- Takahashi, H -- Takahashi, T -- Tanaka, T -- Tanaka, Y -- Thayer, J B -- Thayer, J G -- Thompson, D J -- Tibaldo, L -- Torres, D F -- Tosti, G -- Tramacere, A -- Uchiyama, Y -- Usher, T L -- Vandenbroucke, J -- Vasileiou, V -- Vilchez, N -- Vitale, V -- Waite, A P -- Wallace, E -- Wang, P -- Winer, B L -- Wolff, M T -- Wood, K S -- Yang, Z -- Ylinen, T -- Ziegler, M -- Maehara, H -- Nishiyama, K -- Kabashima, F -- Bach, U -- Bower, G C -- Falcone, A -- Forster, J R -- Henden, A -- Kawabata, K S -- Koubsky, P -- Mukai, K -- Nelson, T -- Oates, S R -- Sakimoto, K -- Sasada, M -- Shenavrin, V I -- Shore, S N -- Skinner, G K -- Sokoloski, J -- Stroh, M -- Tatarnikov, A M -- Uemura, M -- Wahlgren, G M -- Yamanaka, M -- New York, N.Y. -- Science. 2010 Aug 13;329(5993):817-21. doi: 10.1126/science.1192537.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Space Science Division, Naval Research Laboratory, Washington, DC 20375, USA.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/20705855" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
    Publication Date: 1988-11-18
    Description: Rinderpest is a highly contagious ruminant viral disease manifested by a rapid course and greater than 90% mortality. Infectious vaccinia virus recombinants were constructed that express either the hemagglutinin or the fusion gene of rinderpest virus. All cattle vaccinated with either recombinant or with the combined recombinants produced neutralizing antibodies against rinderpest virus and were protected against the disease when challenged with more than 1000 times the lethal dose of the virus.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Yilma, T -- Hsu, D -- Jones, L -- Owens, S -- Grubman, M -- Mebus, C -- Yamanaka, M -- Dale, B -- New York, N.Y. -- Science. 1988 Nov 18;242(4881):1058-61.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Veterinary Microbiology and Immunology, University of California, Davis 95616.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/3194758" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Cattle ; Cloning, Molecular ; Hemagglutinins, Viral/genetics/*immunology ; Immunologic Memory ; Rinderpest/*prevention & control ; Vaccination ; *Vaccines ; *Vaccines, Synthetic ; Vaccinia virus/genetics ; Viral Fusion Proteins/genetics/*immunology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 5
    Publication Date: 2017-05-09
    Description: Deformation and recyrstallization behavior of pure niobium was investigated in order to clarify the origin of its low hydro-formability despite of its high ductility comparable with pure iron. It was found that pure niobium exhibits lower strain hardening in cold rolling compared with pure iron. Furthermore, in post-deformation annealing, the hardness of niobium decreased monotonously with an increase of temperature, and the typical sharp drop by recrystallization was not evident. This softening behavior was contrasted with the high-purity iron. It is suggested that niobium exhibit the so-called in-situ recrystallization possibly because of low elastic modulus and low accumulative plastic strain energy in spite of high melting temperature. The low hydro-formability of pure niobium sheets or tubes is caused by its low strain hardening and its unique plastic anisotropy which is associated with this recovered residual rolled texture.
    Print ISSN: 1757-8981
    Electronic ISSN: 1757-899X
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1323-1330 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies and numerical analysis have been carried out to clarify the relationship between carrier diffusion lengths and defect density in undoped a-Si:H. It has been confirmed that in device quality plasma-deposited a-Si:H, the diffusion lengths of both electrons and holes under steady-state illumination of the intensity equivalent to normal solar cell operating conditions are determined by the density of Si dangling-bond defects ranging between 3×1015 and 8×1016 cm−3. This rather trivial result, however, has not been obtained in previous studies in which the carrier transport data obtained by the steady-state photocarrier grating method were treated incorrectly. The ratio of the drift mobility of electrons to that of holes and the ratio of electron lifetime to the hole lifetime in a-Si:H under illumination have been determined and their implications discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 599-603 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical properties of unintentionally doped n-type and Al-doped p-type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures between 10 and 1000 K. Activation energies of Al acceptors and residual donors obtained from the temperature dependence of carrier density are 160 and 18 meV, respectively. 40%–60% of Al acceptors in the p-type epilayers are compensated, and hole mobility is limited by acoustic phonon scattering above 300 K and by ionized impurity scattering below 250 K.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 840-848 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies have revealed that defect related properties in hydrogenated amorphous silicon (a-Si:H) can be modified by visible-light illumination during plasma enhanced chemical vapor deposition growth; light-induced degradation after growth and initial defect density has been reduced in the samples prepared under illumination with and without a shield mesh separating the plasma region and a substrate in the deposition chamber, respectively. These properties are metastable below the deposition temperature and are a result of the counterbalance between illumination and the thermal effects during growth. The reduction of the light-induced changes in the present samples does not relate to changes in hydrogen bonding. The defect annihilation reaction during growth has been enhanced and the reaction barrier has been lowered from 0.57 to 0.34 eV under illumination. It has also been found that the defect density depends exponentially on the intensity of incident visible light. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Experimental studies have been made on the electrical properties of hydrogenated amorphous silicon (a-Si:H) using liquid Schottky barriers. We have found that the quasi-static capacitance-voltage (C-V) method can be applied to the a-Si:H/quinone-hydroquinone (Q-HQ) liquid Schottky junction. This method enables us to determine the net density of positive space charge due to ionized traps and impurities in a-Si:H (Ne), the built-in potential (Vb), and the width of the surface space-charge layer (W), of this liquid junction. The barrier height of an undoped a-Si:H/Q-HQ junction has been estimated to be more than 1 eV from the value of Vb thus obtained. By C-V and surface photovoltage (SPV) measurements on the same samples, we have studied the changes in the properties of a-Si:H with doping and with prolonged illumination. It has been found that phosphorous (P) doping drastically decreases the hole diffusion length measured by the SPV method and increases the value of Ne. Slight boron (B) doping increases the ambipolar diffusion length L1 and the field assisted carrier collection length L2, both of which have been determined by SPV. These results explain the observed enhancement of the photovoltaic properties of a-Si:H p-i-n solar cells with the slight B doping to the i layers. The values of L1 and L2 have a distinct correlation with the photo-voltaic properties in the slightly B-doped samples, which has confirmed the effectiveness of the SPV method in characterizing a-Si:H as a photovoltaic material. We have found that the increase in Ne and the decrease in L1 occur simultaneously in undoped a-Si:H with prolonged illumination. On the other hand, the increase in Ne does not always accompany the decrease in L1 in the photoinduced changes in P-doped or slightly B-doped a-Si:H, which suggests the difference in the mechanism of the changes between undoped and doped samples.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2989-2991 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky-barrier field-effect transistors have been fabricated first from 3C-type SiC. Al-doped p-type and nondoped n-type 3C-SiC epilayers were successively grown on p-type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky-barrier gate contacts and ohmic (source and drain) contacts for n-type SiC. Transistor operation was observed for the first time for the field-effect transistors of 3C-SiC.
    Type of Medium: Electronic Resource
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