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  • 1
    Online Resource
    Online Resource
    Cham :Springer International Publishing :
    Keywords: Plant genetics. ; Plant biotechnology. ; Agriculture. ; Plant Genetics. ; Plant Biotechnology. ; Agriculture.
    Description / Table of Contents: Chapter 1. Economic and Academic Importance of Rye -- Chapter 2. Hybrid Rye Breeding -- Chapter 3. Rye Cytogenetics and Chromosome Genomics -- Chapter 4. The B Chromosome of Rye -- Chapter 5. Dissection of the Rye Genome by the Gametocidal System -- Chapter 6. Evolution and Domestication of Rye -- Chapter 7. Assembling the Rye Genome -- Chapter 8. The Gene and Repetitive Element Landscape of the Rye Genome -- Chapter 9. Bridging the Genotype-Phenotype Gap for Precision Breeding in Rye -- Chapter 10. Genomics of Self-Incompatibility and Male-Fertility Restoration in Rye -- Chapter 11. Genetics and Genomics of Stress Tolerance.
    Abstract: This book celebrates the dawn of the rye genomics era with concise, comprehensive, and accessible reviews on the current state of rye genomic research, written by experts in the field for students, researchers and growers. To most, rye is the key ingredient in a flavoursome bread or their favourite American whisky. To a farmer, rye is the remarkable grain that tolerates the harshest winters and the most unforgiving soils, befitting its legacy as the life-giving seed that fed the ancient civilisations of northern Eurasia. Since the mid-1900s, scientists have employed genetic approaches to better understand and utilize rye, but only since the technological advances of the mid-2010s has the possibility of addressing questions using rye genome assemblies become a reality. Alongside the secret of its unique survival abilities, rye genomics has accelerated research on a host of intriguing topics such as the complex history of rye’s domestication by humans, the nature of genes that switch fertility on and off, the function and origin of accessory chromosomes, and the evolution of selfish DNA.
    Type of Medium: Online Resource
    Pages: XIX, 236 p. 73 illus., 59 illus. in color. , online resource.
    Edition: 1st ed. 2021.
    ISBN: 9783030833831
    Series Statement: Compendium of Plant Genomes,
    DDC: 581.35
    Language: English
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  • 2
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    Geological Society of America (GSA)
    In: Geology
    Publication Date: 2016-10-19
    Description: The Neoproterozoic Sturtian glaciation is considered to be among the most severe glaciations in Earth history, possibly encompassing the entire planet and lasting for more than 50 m.y. Iron formations are globally associated with Sturtian glacial successions, although the influence of glaciation on the genesis of these iron formations remains contentious. Here we examine the Sturtian iron formations of Namibia and Australia that feature finely laminated ironstones containing up to 55% total iron. These ironstones are repeatedly interbedded with massive diamictites, yet dropstones and other clastic input are nearly absent in the laminated ironstone facies. Intercalated diamictites are variably ferruginous and characterized by a strong glacial influence with evidence of glaciotectonism. The ferruginous facies are laterally discontinuous and commonly occupy paleobathymetric depressions. Rare earth element signatures from these iron formations are similar to those from modern seawater but lack cerium anomalies. The paradox of dropstone-free, laminated sediments intimately interlaminated with massive ice-proximal diamictites can be resolved by deposition under an ice shelf. Polynya activity and the mixing of cold, oxygenated glacial fluids with ferruginous seawater via an ice pump mechanism may explain the deposition of these iron formations and their restriction to Sturtian glacial successions globally.
    Print ISSN: 0091-7613
    Electronic ISSN: 1943-2682
    Topics: Geosciences
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  • 3
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    Unknown
    In:  J. Geophys. Res., Washington, D.C., AGU, vol. 109, no. B12, pp. 1-4, pp. B12406, (ISSN: 1340-4202)
    Publication Date: 2004
    Keywords: Subduction zone ; seismic Moment ; Stress ; JGR
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  • 4
    Publication Date: 2015-08-13
    Description: Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 5
    Publication Date: 2016-07-14
    Description: Chemical vapor deposition methods were developed, using stoichiometric reactions of specialty Ge 3 H 8 and SnD 4 hydrides, to fabricate Ge 1- y Sn y photodiodes with very high Sn concentrations in the 12%–16% range. A unique aspect of this approach is the compatible reactivity of the compounds at ultra-low temperatures, allowing efficient control and systematic tuning of the alloy composition beyond the direct gap threshold. This crucial property allows the formation of thick supersaturated layers with device-quality material properties. Diodes with composition up to 14% Sn were initially produced on Ge-buffered Si(100) featuring previously optimized n -Ge/ i -Ge 1- y Sn y / p -Ge 1- z Sn z type structures with a single defected interface. The devices exhibited sizable electroluminescence and good rectifying behavior as evidenced by the low dark currents in the I-V measurements. The formation of working diodes with higher Sn content up to 16% Sn was implemented by using more advanced n -Ge 1- x Sn x / i -Ge 1- y Sn y / p -Ge 1- z Sn z architectures incorporating Ge 1- x Sn x intermediate layers ( x ∼ 12% Sn) that served to mitigate the lattice mismatch with the Ge platform. This yielded fully coherent diode interfaces devoid of strain relaxation defects. The electrical measurements in this case revealed a sharp increase in reverse-bias dark currents by almost two orders of magnitude, in spite of the comparable crystallinity of the active layers. This observation is attributed to the enhancement of band-to-band tunneling when all the diode layers consist of direct gap materials and thus has implications for the design of light emitting diodes and lasers operating at desirable mid-IR wavelengths. Possible ways to engineer these diode characteristics and improve carrier confinement involve the incorporation of new barrier materials, in particular, ternary Ge 1- x - y Si x Sn y alloys. The possibility of achieving type-I structures using binary and ternary alloy combinations is discussed in detail, taking into account the latest experimental and theoretical work on band offsets involving such materials.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 6
    Publication Date: 2016-07-26
    Description: The oxidation behavior of de-capped InAs (100) exposed to O 2 gas at different temperatures is investigated in situ with high resolution of monochromatic x-ray photoelectron spectroscopy and low energy electron diffraction. The oxide chemical states and structure change dramatically with the substrate temperature. A (3 × 1) crystalline oxide layer on InAs is generated in a temperature range of 290–330 °C with a coexistence of In 2 O and As 2 O 3 . The stability of the crystalline oxide upon the atomic layer deposition (ALD) of HfO 2 is studied as well. It is found that the generated (3 × 1) crystalline oxide is stable upon ALD HfO 2 growth at 100 °C.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 7
    Publication Date: 2019
    Description: We report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al2O3 thin film on the UV-Ozone pretreated surface of ReS2 yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al2O3 thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al2O3 was achieved using a UV-Ozone pretreatment. The ReS2 substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S–O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials.
    Electronic ISSN: 1996-1944
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by MDPI
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  • 8
    Publication Date: 2015-08-29
    Description: A half cycle study of plasma enhanced atomic layer deposited (PEALD) Al 2 O 3 on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H 2 O precursor. The remote O 2 plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al 2 O 3 growth on AlGaN/GaN devices.
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 9
    Publication Date: 2016-08-27
    Description: Using time-varying ocean bottom pressure (OBP) from the Gravity Recovery and Climate Experiment (GRACE), a 9-year in situ OBP record at the North Pole, and wind reanalysis products, we perform a linear regression analysis to identify primary predictor time series that enable us to create a proxy representation of the Arctic time-varying OBP that explains the largest fraction of the observed Arctic OBP variability. After cross-validation, two predictors – North Pole OBP record, and wind-OBP coupling from maximum covariance analysis – explain 50% of the total variance of the Arctic OBP. This work provides a means for bridging existing short gaps in GRACE measurements, and potentially longer future gaps that may result if GRACE and its follow-on mission do not overlap. The technique may be applicable to bridge gaps in GRACE measurements in other oceanic regions.
    Print ISSN: 0094-8276
    Electronic ISSN: 1944-8007
    Topics: Geosciences , Physics
    Published by Wiley on behalf of American Geophysical Union (AGU).
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  • 10
    Publication Date: 2015-04-12
    Description: Motivation: All current mitochondrial haplogroup classification tools require variants to be detected from an alignment with the reference sequence and to be properly named according to the canonical nomenclature standards for describing mitochondrial variants, before they can be compared with the haplogroup determining polymorphisms. With the emergence of high-throughput sequencing technologies and hence greater availability of mitochondrial genome sequences, there is a strong need for an automated haplogroup classification tool that is alignment-free and agnostic to reference sequence. Results: We have developed a novel mitochondrial genome haplogroup-defining algorithm using a k-mer approach namely Phy-Mer. Phy-Mer performs equally well as the leading haplogroup classifier, HaploGrep, while avoiding the errors that may occur when preparing variants to required formats and notations. We have further expanded Phy-Mer functionality such that next-generation sequencing data can be used directly as input. Availability and implementation: Phy-Mer is publicly available under the GNU Affero General Public License v3.0 on GitHub ( https://github.com/danielnavarrogomez/phy-mer ). Contact: Xiaowu_Gai@meei.harvard.edu Supplementary information: Supplementary data are available at Bioinformatics online.
    Print ISSN: 1367-4803
    Electronic ISSN: 1460-2059
    Topics: Biology , Computer Science , Medicine
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