Publication Date:
2011-06-23
Description:
Author(s): M. Arita, K. Shimada, Y. Utsumi, O. Morimoto, H. Sato, H. Namatame, M. Taniguchi, Y. Hadano, and T. Takabatake We have performed a photoemission and inverse photoemission spectroscopic study of a narrow-gap semiconductor FeGa 3 , in order to characterize the occupied and unoccupied electronic states. The energy-gap size was found to be ~0.4 eV, and the valence-band maximum (VBM) was located around the A point ... [Phys. Rev. B 83, 245116] Published Wed Jun 22, 2011
Keywords:
Electronic structure and strongly correlated systems
Print ISSN:
1098-0121
Electronic ISSN:
1095-3795
Topics:
Physics
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