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  • 1
    Electronic Resource
    Electronic Resource
    Particle size and interfacial effect on the specific heat of nanocrystalline Fe (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 361-364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The specific heat of nanocrystalline iron with grain size of 40 nm has been measured in the low-temperature range from 1.8 to 26 K. The anomalous specific heat behavior of nanocrystalline iron is compared with that of the normal polycrystalline iron. It is found that the electronic specific heat coefficient γ obtained at low temperatures decreases by about 50%. A quadratic temperature-dependent term associated with surface modes in the heat capacity has been clearly observed. A large enhancement of the specific heat at higher temperatures is interpreted as the Einstein oscillator contribution due to weakly bound atoms at the interfaces of the nanocrystals. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360838
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  • 2
    Electronic Resource
    Electronic Resource
    Studies on quantitative x-ray diffraction characterization of phase depth profiles (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2859-2862 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A fitting method using parallel beam x-ray diffraction (XRD) for profiling phase content changing with depth is presented. This method depends on measurements of XRD intensity at various incident angles, and numerical procedures are employed for obtaining the true depth profiles quantitatively. The procedures were then applied to a nitrided steel sample without preferred orientation and a thin-film sample with preferred orientation. Both model-independent and model-dependent ways were used in fitting. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147124
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  • 3
    Electronic Resource
    Electronic Resource
    Pulsed KrF laser annealing of Ni/Si0.76Ge0.24 films (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3621-3623 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulsed KrF laser annealing can suppress the island structure formation and Ge segregation associated with the interfacial reactions of Ni/Si0.76Ge0.24. For the Ni/Si0.76Ge0.24 films annealed at an energy density of 0.1–0.3 J/cm2 nickel germanosilicide associated with the amorphous overlayer was formed, while at energy densities above 0.4 J/cm2 cellular structures of Ge-deficient Si1−xGex islands surrounded by Ni(Si1−xGex)2 due to the constitutional supercooling occurred. For the continuous Ni(Si1−xGex) films grown at 200 °C, subsequent laser annealing at a higher energy density of 0.6–1.0 J/cm2 caused transformation into homogeneous Ni(Si0.76Ge0.24)2 films without island structure and Ge deficiency which readily appeared on furnace annealing at temperatures above 400 °C. At energy densities above 1.6 J/cm2 the same cellular structures as described above were also noted. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365683
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  • 4
    Electronic Resource
    Electronic Resource
    Low temperature specific heat of bulk glassy and crystalline Zr41Ti14Cu12.5Ni10Be22.5 alloys (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2697-2699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The low temperature specific heat of Zr41Ti14Cu12.5Ni10Be22.5 alloys in glassy and crystalline states has been investigated. The glassy state of the alloy shows much larger specific heat than that of the crystalline state. The density of states at the Fermi level and Debye temperatures, θD of the alloys are determined. It is found that the density of states at the Fermi level for the glassy state is higher than that for crystalline state, the phenomenon is interpreted by localization of electrons in the glassy alloy. A much smaller value of θD in the glassy state indicates marked soften transverse phonons compared to its corresponding crystalline state. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1369616
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  • 5
    Electronic Resource
    Electronic Resource
    Interfacial reactions of Pd/Si0.76Ge0.24 by pulsed KrF laser annealing (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1355-1357 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial reactions of Pd/Si0.76Ge0.24 were studied by pulsed KrF laser annealing as a function of energy density and pulse number. At an energy density of 0.1–0.4 J/cm2, a continuous germanosilicide layer composed of a low-temperature phase, Pd2(Si1−xGex), and a high-temperature phase, Pd(Si1−xGex), was formed. In contrast to vacuum annealing, Ge segregation out of the germanosilicide layer and the strain relaxation of the residual Si0.76Ge0.24 film could be effectively suppressed by pulsed KrF laser annealing at 0.1 J/cm2. Multiple pulse annealing at 0.1 J/cm2 could further homogenize the Pd concentration of the germanosilicide layer and promote the growth of Pd(Si1−xGex). Concurrently, the smoothness of the germanosilicide layer was substantially improved in comparison with those grown by vacuum annealing at temperatures above 200 °C. The studies also revealed that for multiple pulse annealing at 0.1 J/cm2 with a low repetition rate, 1 Hz, the evolution of phase formation and Pd diffusion could be proceeded by each individual laser pulse. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122161
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  • 6
    Electronic Resource
    Electronic Resource
    Localized epitaxial growth of hexagonal and cubic SiC films on Si by vacuum annealing (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 916-918 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Localized epitaxial growth of hexagonal (6H) and cubic (3C) SiC films on Si by annealing the Si substrates at 700–850 °C in a vacuum of 1–2×10−6 Torr is presented. The orientation relationships of epitaxial SiC films grown on (111)Si and (100)Si were (0001)6H-SiC//(111)Si and [112¯0]6H-SiC//[011¯]Si, (111)3C-SiC//(111)Si and [1¯10]3C-SiC//[1¯10]Si, and (100)3C-SiC//(100)Si and [011]3C-SiC//[011]Si, respectively. The amount of 6H-SiC epitaxy was less than that of 3C-SiC epitaxy. For the films grown at 750–850 °C for 0.5 h, the area fraction of SiC epitaxy ranged from 60% to 80% and the film thickness ranged from 0.02 to 0.15 μm. The main carbon source for the growth of SiC on Si during vacuum annealing was the carbon-containing residue present at the chamber walls. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116942
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  • 7
    Electronic Resource
    Electronic Resource
    Effects of Mo-free C40 Ti(Si1−xGex)2 precursors and the thickness of an interposed Mo layer on the enhanced formation of C54 Ti(Si1−xGex)2 (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3482-3484 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of Mo-free C40 Ti(Si1−xGex)2 precursors and the thickness of an interposed Mo layer between Ti films and Si0.76Ge0.24 substrates on the lowering of formation temperature of C54 Ti(Si1−xGex)2 were studied. Metastable C40 Ti(Si1−xGex)2 precursors were grown by pulsed KrF laser annealing. Upon rapid thermal annealing, the Mo-free C40 phase could not be directly transformed to the C54 phase without going through the C49 phase. When the thickness of the interposed Mo layer increased, up to 2.5 nm, the temperature at which the C54 phase was initially formed changed from 750 to 600 and then to 650 °C. The present result showed that with increasing Mo concentration in the reacted layer, the phase stability shifted from C54 to C40 and no C49 was observed. It seems that apart from the C40 template mechanism, the electron/atom ratio also plays an important role in the enhanced formation of the C54 phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125362
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  • 8
    Electronic Resource
    Electronic Resource
    Origin of Solid-State Activated Sintering in Bi2O3-Doped ZnO (1999)
    Westerville, Ohio : American Ceramics Society
    Journal of the American Ceramic Society 82 (1999), S. 0 
    Details
    ISSN: 1551-2916
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Activated sintering in Bi2O3-doped ZnO has been studied with emphasis on the mechanistic role of intergranular amorphous films. The atomic-level microstructures and bismuth solute distributions in doped powders have been investigated using high-resolution electron microscopy and scanning transmission electron microscopy. Densification is observed to be significant below the bulk eutectic temperature in the presence of Bi2O3 concentrations as low as 0.58 mol%. Transmission electron microscopy of as-calcined and sintered powders shows that significant neck growth and particle coarsening occur in the solid state. Intergranular amorphous films of ∼1 nm thickness, terminating in wetting menisci at sinter-necks, are observed to form concurrently with the onset of activated sintering. In a few instances, amorphous films are also observed at surfaces of the ZnO particles. These films appear to be the free-surface counterpart to equilibrium-thickness intergranular films. Activated sintering in this binary system is attributed to rapid mass transport through subeutectic, equilibrium-thickness intergranular films, with the amorphous phase also providing capillary pressure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1151-2916.1999.tb01853.x
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  • 9
    Electronic Resource
    Electronic Resource
    A Preliminary Model Accounting for the Suction Pressure in CMP Process (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Key engineering materials Vol. 353-358 (Sept. 2007), p. 737-741 
    Details
    ISSN: 1013-9826
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Chemical mechanical polishing (CMP) is a widely used technique to achieve high level ofglobal and local planarity required in modern integrate circuit (IC) industries and hard diskmanufacturing process, etc., which pleas for concentrate researches. The main purpose of the presentresearch is in an attempt to express the counterintuitive experimental aftermath: the ‘negative’pressure, i.e., a suction force occurred in conventional commercial CMP process. A preliminary twotiers wafer-scale flow model for CMP is presented considering the roughness as well as the elasticityof the bulk pad substrate. Numerical simulations were conducted to elucidate the contact pressure andflow pressure distributions. The results show that a divergence region appears near the leading edge,which contributes to the suction pressure. A stress-richened area near the edges will give rise to overpolishing. The research aftermaths agree well with the experiments, that validate the proposedanalysis to some extend. This will shed lights on the mechanism of CMP process, which for a longtime is considered as a black art where empirical or semi-empirical data are dependent upon tooptimize the CMP parameters
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/01/55/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.353-358.737.pdf
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  • 10
    Electronic Resource
    Electronic Resource
    Contribution of Porous Pad to Chemical Mechanical Polishing (2007)
    s.l. ; Stafa-Zurich, Switzerland
    Solid state phenomena Vol. 121-123 (Mar. 2007), p. 1133-1138 
    Details
    ISSN: 1662-9779
    Source: Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
    Topics: Physics
    Notes: Chemical mechanical polishing (CMP) is a widely used technique to achieve high level ofglobal and local planarity required in integrate circuit (IC) areas, which pleas for concentrateresearches. A preliminary wafer-scale flow model for CMP is presented considering the roughnessas well as the porosity and compressibility of the pad. Pressure distributions for three kinds of padroughness: cosine shape, two-scale cosine shape and actual roughness were given with the help ofnumerical simulation by solving the corresponding two-dimensional slurry flow model. Pressurefluctuations and peaks can be seen from the results. The model predictions will be conducive to theremoval rate and mass transport computation. The research is a qualitative one and will pave theway for further explorations of mechanisms of CMP process
    Type of Medium: Electronic Resource
    URL: http://www.tib-hannover.de/fulltexts/2011/0528/02/23/transtech_doi~10.4028%252Fwww.scientific.net%252FSSP.121-123.1133.pdf
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