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  • 1
  • 2
    Publication Date: 2020-07-08
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 3
    Publication Date: 2017-01-26
    Description: Robust projections and predictions of climate variability and change, particularly at regional scales, rely on the driving processes being represented with fidelity in model simulations. The role of enhanced horizontal resolution in improved process representation in all components of the climate system is of growing interest, particularly as some recent simulations suggest both the possibility of significant changes in large-scale aspects of circulation as well as improvements in small-scale processes and extremes. However, such high-resolution global simulations at climate timescales, with resolutions of at least 50 km in the atmosphere and 0.25° in the ocean, have been performed at relatively few research centres and generally without overall coordination, primarily due to their computational cost. Assessing the robustness of the response of simulated climate to model resolution requires a large multi-model ensemble using a coordinated set of experiments. The Coupled Model Intercomparison Project 6 (CMIP6) is the ideal framework within which to conduct such a study, due to the strong link to models being developed for the CMIP DECK experiments and other model intercomparison projects (MIPs). Increases in high-performance computing (HPC) resources, as well as the revised experimental design for CMIP6, now enable a detailed investigation of the impact of increased resolution up to synoptic weather scales on the simulated mean climate and its variability. The High Resolution Model Intercomparison Project (HighResMIP) presented in this paper applies, for the first time, a multi-model approach to the systematic investigation of the impact of horizontal resolution. A coordinated set of experiments has been designed to assess both a standard and an enhanced horizontal-resolution simulation in the atmosphere and ocean. The set of HighResMIP experiments is divided into three tiers consisting of atmosphere-only and coupled runs and spanning the period 1950–2050, with the possibility of extending to 2100, together with some additional targeted experiments. This paper describes the experimental set-up of HighResMIP, the analysis plan, the connection with the other CMIP6 endorsed MIPs, as well as the DECK and CMIP6 historical simulations. HighResMIP thereby focuses on one of the CMIP6 broad questions, “what are the origins and consequences of systematic model biases?”, but we also discuss how it addresses the World Climte Research Program (WCRP) grand challenges.
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
    Format: application/pdf
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  • 4
    Publication Date: 2017-04-04
    Description: The effect of horizontal resolution on tropical variability is investigated within the modified SINTEX model, SINTEX-F, developed jointly at INGV, IPSL and at the Frontier Research System. The horizontal resolutions T30 and T106 are investigated in terms of the coupling characteristics, frequency and variability of the tropical ocean-atmosphere interactions. It appears that the T106 resolution is generally beneficial even if it does not eliminate all the major systematic errors of the coupled model. There is an excessive shift west of the cold tongue and ENSO variability, and high resolution has also a somewhat negative impact to the variability in the East Indian Ocean. A dominant two-year peak for the NINO3 variabilty in the T30 model is moderated in the T106 as it shifts to longer time scale. At high resolution new processes come into play, as the coupling of tropical instability waves, the resolution of coastal flows at the Pacific Mexican coasts and improved coastal forcing along the coast of South America. The delayed oscillator seems the main mechanism that generates the interannual variability in both models, but the models realize it in different ways. In the T30 model it is confined close to the equator, involving relatively fast equatorial and near-equatorial modes, in the high resolution, it involves a wider latitudinal region and slower waves. It is speculated that the extent of the region that is involved in the interannual variability may be linked to the time scale of the variability itself.
    Description: This research was partially supported by the Italy–USA Cooperation Program of the Italian Ministry of Environment and by the EU projects ENSEMBLES and DYNAMITE.
    Description: Published
    Description: 730-750
    Description: 3.7. Dinamica del clima e dell'oceano
    Description: JCR Journal
    Description: reserved
    Keywords: coupled models ; tropical variability ; ENSO system ; 03. Hydrosphere::03.01. General::03.01.03. Global climate models
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
    Type: article
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  • 5
    Publication Date: 2017-04-04
    Description: The Indian Summer Monsoon (ISM) is one of the main components of the Asian summer monsoon. It is well known that one of the starting mechanisms of a summer monsoon is the thermal contrast between land and ocean and that sea surface temperature (SST) and moisture are crucial factors for its evolution and intensity. The Indian Ocean, therefore, may play a very important role in the generation and evolution of the ISM itself. A coupled general circulation model, implemented with a high resolution atmospheric component, appears to be able to simulate the Indian summer monsoon in a realistic way. In particular, the features of the simulated ISM variability are similar to the observations. In this study, the relationships between ISM and Tropical Indian Ocean (TIO) SST anomalies are investigated, as well as the ability of the coupled model to capture those connections. The recent discovery of the Indian Ocean Dipole Mode (IODM) may suggest new perspectives in the relationship between ISM and TIO SST. A new statistical technique, the Coupled Manifold, is used to investigate the TIO SST variability and its relation with the Tropical Pacific Ocean (TPO). The analysis shows that the SST variability in the TIO contains a significant portion that is independent from the TPO variability. The same technique is used to estimate the amount of Indian rainfall variability that can be explained by the Tropical Indian Ocean SST. Indian Ocean SST anomalies are separated in a part remotely forced from the Tropical Pacific Ocean variability and a part independent from that. The relationships between the two SSTA components and the Indian monsoon variability are then investigated in detail.
    Description: Published
    Description: 3083-3105
    Description: 3.7. Dinamica del clima e dell'oceano
    Description: JCR Journal
    Description: reserved
    Keywords: Indian Ocean ; monsoon ; 01. Atmosphere::01.01. Atmosphere::01.01.02. Climate
    Repository Name: Istituto Nazionale di Geofisica e Vulcanologia (INGV)
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  • 6
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    In:  http://aquaticcommons.org/id/eprint/14722 | 9 | 2014-02-23 16:59:41 | 14722 | Gulf and Caribbean Fisheries Institute
    Publication Date: 2021-07-02
    Description: File contains complete: Special Session Abstracts - Re-Inventing reef fisheries mangement: emphasis on the US Caribbean.
    Keywords: Fisheries ; GCFI
    Repository Name: AquaDocs
    Type: conference_item
    Format: application/pdf
    Format: application/pdf
    Format: 478-479
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 620-627 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical characterization has been carried out on electron irradiated InP grown by metal-organic chemical-vapor deposition (MOCVD) and liquid encapsulated Czochralski (LEC), through I–V (–T), C–V, deep level transient spectroscopy (DLTS) and admittance spectroscopy measurements and the resistance to electron radiation for these two materials has been compared. It was found that MOCVD-InP was more resistant to electron radiation than LEC-InP, as demonstrated by the lower carrier removal rate and change of series resistance in the MOCVD-InP diodes as a result of electron radiation. The introduction rates for the dominant hole defects H3 and H4 and for additional electron defect states were found to be similar for both materials, but were insufficient to explain the degree of degradation of solar cell efficiency incurred by these known defects. A new defect, HD1, has been found to be responsible for the high carrier removal rate and the introduction of a large series resistance which accounts for the difference of radiation hardness between these two materials. The results again show that the dominant irradiation defects in InP are not the defects H3 and H4 as is usually accepted, but the new found defect HD1, which was undetected by the DLTS technique. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3622-3629 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of growth temperature and subsequent annealing temperatures on the electrical properties of the low temperature (LT) grown GaAs have been investigated. It was found that the resistivity of the as-grown LT-GaAs layer increased with increasing growth temperature, but was accompanied by a reduction of breakdown voltage over the same temperature range. Thermal annealing of the samples caused the resistivity to rise exponentially with increasing annealing temperature TA, giving an activation energy of EA=2.1 eV. The transport of the LT-GaAs layers grown at Tg≤250 °C was found to be dominated by hopping conduction in the entire measurement temperature range (100–300 K), but following annealing at TA(approximately-greater-than)500 °C, the resistivity-temperature dependence gave an activation energy of ∼0.7 eV. The breakdown voltage VBD, for as-grown LT-GaAs was enhanced on lowering the measurement temperature, but conversely, decreased over the same temperature range following annealing at TA(approximately-greater-than)500 °C. The hopping conduction between arsenic defects, or arsenic clusters in annealed samples, is believed to be responsible for the observed electrical breakdown properties. Since the resistivities of the as-grown LT-GaAs layers are dependent, solely, on the excess arsenic, which in turn depends on the growth temperature, then the resistivities obtained can be used as a measure of the growth temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4822-4824 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band-gap narrowing effect of GaAs as a function of carbon doping concentration has been measured using photoluminescence (PL) spectroscopy on samples grown by metalorganic chemical-vapor deposition. The range of carbon concentration varies from 3.4×1018 to 1.1×1020 cm−3. The experimental results obtained from PL spectra taking tailing effects into account are in good agreement with recent theoretical calculations. The intensity of PL spectra decreases rapidly when the free-carrier concentration is higher than about 4×1019 cm−3. This phenomenon cannot be explained with only the varying tendency of the minority-electron lifetime of the radiative recombination process, indicating the introduction of additional nonradiative recombination centers in heavily C-doped GaAs. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 4549-4551 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The quantum Hall effect of electrons in AlGaAs/Ga1−x Inx As/GaAs pseudomorphic strained heterostructures is reported for the first time. Despite the large strain induced by the lattice mismatch, clear quantum Hall plateaus and Shubnikov–de Haas oscillation are observed, indicating the presence of a well behaved two-dimensional electron gas. Although the mobility of the sample is fairly low, a pronounced asymmetry in the spin splitting of the magnetoresistivity appears at high magnetic fields in contrast to the previous results on AlGaAs/GaAs structures where asymmetry appears only in the high-mobility samples and disappears when the mobility is lower. This indicates that the shape of the state density is not influenced significantly by the presence of the high concentration of the short-range cluster-scattering centers.
    Type of Medium: Electronic Resource
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