ALBERT

Description: Both the NASA Glenn Research Center and the U.S. Army Research Laboratory, Development and Engineering Center (ARDEC) have worked to develop oxide ceramic films grown on 60 nitinol (60-wt% nickel and 40-wt% titanium) to decrease friction and increase wear resistance under unlubricated conditions. In general, oxide and nonoxide ceramic films have unique capabilities as mechanical-, chemical-, and thermal-barrier materials in diverse applications, including high-temperature bearings and gas bearings requiring low friction, wear resistance, and chemical stability. All oxide ceramic films grown on 60 nitinol were furnished by ARDEC, and materials and surface characterization and tribological experiments were conducted at Glenn.

Description: We report the first demonstration of MEMS-based 4H-SiC piezoresistive pressure sensors tested at 750 C and in the process confirmed the existence of strain sensitivity recovery with increasing temperature above 400 C, eventually achieving near or up to 100% of the room temperature values at 750 C. This strain sensitivity recovery phenomenon in 4H-SiC is uncharacteristic of the well-known monotonic decrease in strain sensitivity with increasing temperature in silicon piezoresistors. For the three sensors tested, the room temperature full-scale output (FSO) at 200 psig ranged between 29 and 36 mV. Although the FSO at 400 C dropped by about 60%, full recovery was achieved at 750 C. This result will allow the operation of SiC pressure sensors at higher temperatures, thereby permitting deeper insertion into the engine combustion chamber to improve the accurate quantification of combustor dynamics.

Description: Complex integrated circuit (IC) chips rely on more than one level of interconnect metallization for routing of electrical power and signals. This work reports the processing and testing of 4H-SiC junction field effect transistor (JFET) prototype ICs with two levels of metal interconnect capable of prolonged operation at 500 C. Packaged functional circuits including 3-and 11-stage ring oscillators, a 4-bit digital to analog converter, and a 4-bit address decoder and random access memory cell have been demonstrated at 500 C. A 3-stage oscillator functioned for over 3000 hours at 500 C in air ambient.

Description: A novel tungsten-nickel ohmic contact metallization on 4H-SiC and 6H-SiC capable of surviving temperatures as high as 900 C is reported. Preliminary results revealed the following: 1) ohmic contact on n-type 4H-SiC having net doping levels (Nd's) of 1.4 and 2 x 10(exp 19) per cubic centimeter, with specific contact resistances rhosNd's of 7.69 x 10(exp -4) and 5.81 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after rapid thermal annealing (RTA), and 5.9 x 10(exp -3) and 2.51 x 10(exp -4) OMEGA (raised dot) square centimeters, respectively, after subsequent soak at 900 C for 1 h in argon, and 2) ohmic contact on n- and p-type 6H-SiC having Nd 〉 2 x 10(exp 19) and Na 〉 1 x 10(exp 20) per cubic centimeter, with rhosNd = 5 x 10(exp -5) and rhosNa = 2 X 10(exp -4) OMEGA (raised dot) square centimeter, respectively, after RTA, and rhosNd = 2.5 x 10 (exp -5) and rhosNa = 1.5 x 10(exp -4) OMEGA (raised dot) square centimeter after subsequent treatment at 900 C for 1 h in argon, respectively.

Description: We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

Description: We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Description: The chemical and microstructural behavior of steels (304, 310, 316, and 1018), nickel-based alloys (beta-NiAl, G30, and 625), gold, coatings (4YSZ, SilcoNert(TradeMark) 1040 (SilcoTek Co.), Dursan(TradeMark) (SilcoTek Co.), and porcelain), and bulk ceramics (alpha-Al2O3, fused quartz, beta-SiC, and alpha-Si3N4) were probed after exposure to supercritical fluid with temperature, pressure, and composition mimicking the Venus lower atmosphere. Exposures were carried out in the Glenn Extreme Environments Rig (GEER) chamber with the Venusian gas mixture (96.5% CO2, 3.5% N2, 30 ppm H2O, 150 ppm SO2, 28 ppm CO, 15 ppm OCS, 3 ppm H2S, 0.5 ppm HCl, and 5 ppb HF) at 92 bar (1330 psi) and 467 C (873 F) for durations of 10 and 42 days. An additional 21-day exposure was done to stainless steel uncoated and coated with SilcoNert(TradeMark) and Dursan(TradeMark). Samples were characterized before and after the experiment by gravimetric analysis, X-ray diffraction, X-ray photoelectron and Auger electron spectroscopies, and cross section electron microscopy analysis. All steels exposed for 10 and 42 days formed double-layered scales consisting mainly of metal (Cr, Fe, Ni) oxides and sulfides showing different chemistry, microstructure, and crystalline phases. The alloys G30 and 625 formed double-layered scales consisting mainly of nickel sulfides. After 10 days, the beta-NiAl exhibited no detectable scale, suggesting only a very thin film was formed. The 304 and 316 stainless steels coated with 4YSZ that were exposed for 10 and 42 days exhibited no significant oxidation. Steel 1018 coated with 4YSZ exhibited a corrosion scale of iron and/or chromium oxide formed at the base of the alloy. The 304 steel coated with porcelain did not exhibit corrosion, although the coating exhibited recession. SilcoNert(TradeMark) exposed for 10 and 42 days exhibited recession, although no oxidation was found to occur at the base of the alloy. Stainless steel 316 coated with Dursan(TradeMark) exhibited corrosion at the base of the alloy. All ceramics tested showed no clear evidence of reaction. The weight-gain-per-area performance of the materials exposed in the GEER for 10 and 42 days are reported from the lowest to the highest weight gain per area as follows: gold did not exhibit any weight change; nickel-based alloys: beta- NiAl 〈 G30 〈 625; steels: 304 〈 310 〈 316 〈 1018; ceramics: considering the experimental uncertainties, no weight change was observed for all ceramics of this work (alpha-Al2O3, Si3N4, SiC, and amorphous SiO2).

Description: This report describes more than 5000 hours of successful 500 C operation of semiconductor integrated circuits (ICs) with more than 100 transistors. Multiple packaged chips with two different 4H-SiC junction field effect transistor (JFET) technology demonstrator circuits have surpassed thousands of hours of oven-testing at 500 C. After 100 hours of 500 C burn-in, the circuits (except for 2 failures) exhibit less than 10 change in output characteristics for the remainder of 500C testing. We also describe the observation of important differences in IC materials durability when subjected to the first nine constituents of Venus-surface atmosphere at 9.4 MPa and 460C in comparison to what is observed for Earth-atmosphere oven testing at 500 C.