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  • 1
    Electronic Resource
    Electronic Resource
    Photoinduced admittance spectroscopy to detect the shallow electron traps in nitrogen-doped highly compensated ZnSe (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 2425-2428 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This article describes a technique to detect shallow levels in highly compensated ZnSe by photoinduced admittance spectroscopy (PIAS). Nitrogen doped ZnSe with a Schottky barrier on top has been investigated, and the photovoltage measurements show that the electric charge in the depletion layer becomes positive under high intensity illumination with photon energies larger than the energy gap of ZnSe. An electron trap with an activation energy of 50 meV was obtained from the PIAS measurement. The accuracy of this technique is confirmed by reconstruction of the temperature dependence of the capacitance and conductance by a computer simulation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364249
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  • 2
    Electronic Resource
    Electronic Resource
    Effect of rapid thermal annealing on the strain relaxation in heavily boron doped silicon epitaxial layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2974-2977 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The lattice parameters of heavily boron doped silicon homoepitaxial layers before and after rapid thermal annealing at different temperatures (800–1100 °C) are characterized by x-ray double crystal diffraction. The results illustrate that although the strain relaxation occurs after the rapid thermal annealing (RTA) treatment, the improvement of the crystalline quality of epitaxial layers are observed at RTA temperatures higher than 1000 °C. The proportional relationship between the lattice mismatch and the substitutional boron concentration with the lattice contract coefficient β=5.3 (in units 10−24 cm3) is valid up to the concentration of 3×1020 cm−3. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358713
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  • 3
    Electronic Resource
    Electronic Resource
    Detection of defects at homoepitaxial interface by deep-level transient spectroscopy (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 213-217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interfacial defects at the p-Si epitaxial layer/p-Si substrate interface have been studied by deep-level transient spectroscopy (DLTS). By solving Poisson equation, the electron concentration at the defect level varied with external voltage is derived. The emission and capture of electrons at the defect level, which are not observable in conventional DLTS, can be detected simultaneously in a single temperature scan by properly choosing the experimental parameters. The experimental results show that the energy level of the interfacial defects is located at Ec−0.30 eV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359372
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  • 4
    Electronic Resource
    Electronic Resource
    Effects of rapid thermal annealing on electrical properties of heavily doped silicon molecular-beam-epitaxial layer with B2O3 doping source (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 1697-1700 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing (RTA) on the electrical properties of heavily boron-doped silicon epilayer grown at 680 °C by molecular-beam epitaxy and coevaporation of B2O3 is studied. Through the RTA process, the boron clusters in the epilayer break into boron atoms and the interstitial boron enters the substitutional site. These two effects cause the improvement of the electrical properties of the silicon epilayer. After RTA at 1100 °C for 10 s, the hole concentration can reach 3.1×1020 cm−3 with the mobility of 39 cm2/V s, which is about the same as that of the bulk silicon, while the oxygen concentration is less than 1018 cm−3. It is also shown that the full width at half-maximum of the x-ray-diffraction rocking curve decreases as the RTA temperature increases. The RTA process does not affect the steep distribution of carrier concentration at the epilayer/substrate interface which differs by about 6 orders of magnitude across the interface with the leading edge slope of 25–30 nm/decade.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357683
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  • 5
    Electronic Resource
    Electronic Resource
    Single-frequency admittance spectroscopy measurement of band offset in a Si/Si1−xGex/Si quantum well (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 2957-2962 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A single-frequency admittance spectroscopy technique is presented to determine the band discontinuity of the Si/Si1−xGex/Si single quantum well. The accuracy of determining the activation energy for thermionic emission of holes over the Si barrier is improved as compared with the multiple-frequency admittance spectroscopy measurement. To derive the band offset from the activation energy, the Fermi energy with respect to the band edge is calculated more exactly by solving the Poisson equation which accounts for the carrier transfer at the heterointerface. The accuracy of this technique is verified by the reconstruction of the temperature dependence of capacitance and conductance by the computer simulation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356192
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  • 6
    Electronic Resource
    Electronic Resource
    Thermal stability of a Si/Si1−xGex quantum well studied by admittance spectroscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1947-1950 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of a SiGe/Si quantum well grown by molecular-beam epitaxy is studied by using the admittance spectroscopy technique. The values of activation energies of hole emission from the subbands in the SiGe/Si quantum well are derived from the admittance spectra. After annealing the sample at different temperatures, the activation energy varies in different behaviors. There is no significant change of the activation energy after annealing at 700 °C for 40 min. At the annealing temperature of 900 °C, the decrease of the activation energy with annealing time could be attributed to the interdiffusion of Ge, Si atoms at the heterointerfaces and the strain relaxation effect. An unexpected phenomenon is observed at the annealing temperature of 800 °C, i.e., the activation energy increases with the annealing time. This extraordinary phenomenon is supposed to be caused by the change of the well potential shape due to the B out-diffusion from the well to the Si barrier. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372118
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  • 7
    Electronic Resource
    Electronic Resource
    Well depth fluctuation of Si1−xGex/Si quantum well structures studied by conductance–voltage technique (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 5587-5592 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A conductance method is proposed to study the interfacial band offset and the well depth fluctuation of SiGe/Si quantum well structures. Based on an equivalent circuit model, the frequency-dependent and temperature-dependent conductance–voltage (G–V) characteristics of quantum well structures are analyzed. It is revealed that corresponding to each well a conductance peak will appear in the G–V curve and meanwhile a capacitance step will appear in the capacitance–voltage curve. By this conductance method the position of the Fermi level as functions of applied bias voltage and temperature can be obtained in a wide voltage range. The conductance method is found to be an effective method to measure not only the band offset of single quantum well but also the well depth fluctuation of multiple quantum wells. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368603
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  • 8
    Electronic Resource
    Electronic Resource
    Germanium dots with highly uniform size distribution grown on Si(100) substrate by molecular beam epitaxy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3543-3545 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The growth of very uniform Ge dots on Si(100) is achieved by using molecular beam epitaxy. The atomic force microscopy and the transmission electron microscopic observations illustrate that the size uniformity of the dots is not worse than ±3%, i.e., the base dimension is 100±3 nm. The Raman spectrum reveals a peak downward shift of Ge-Ge mode caused by the phonon confinement in the Ge dots. A very narrow photoluminescence peak with the width of 1.6 meV at the energy of 0.767 eV is observed at the temperature of 16 K. We attribute this peak to the free exciton longitudinal acoustic phonon replica originated from the Ge dots. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120385
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  • 9
    Electronic Resource
    Electronic Resource
    Photovoltaic investigations of interband transitions in SiGe/Si multiple quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1782-1784 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photovoltaic effect measurements have been carried out for the strained Si1−xGex/Si multiple quantum well samples. The absorption structures of the transitions from heavy-hole ground state (HH0) to the unconfined conduction (EC) states, light-hole ground state to EC states as well as the transitions of phonon (transverse acoustic and transverse optical)-assisted HH0-EC excitons of the sample with x=0.25 are identified by the photovoltaic measurement at the temperature of 18 K. The agreement between the experimental results and the calculations based on simple theoretical models is fairly good. Due to the rapid increase of the background absorption, the structures of the transitions from excited hole subbands to the conduction states are very difficult to identify. For the sample with x=0.5, the absorption related to the defects originated from the partial relaxation of the large misfit strain between Si0.5Ge0.5 and Si gives a great influence upon the identification of the interband absorption structures of the multiple quantum well. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113320
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  • 10
    Electronic Resource
    Electronic Resource
    Highly Selective Membrane-Free, Mediator-Free Glucose Biosensor (1994)
    s.l. : American Chemical Society
    Analytical chemistry 66 (1994), S. 3600-3603 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00093a011
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