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  • 1
    Electronic Resource
    Electronic Resource
    Analysis of the effects of constant-current Fowler–Nordheim-tunneling injection with charge trapping inside the potential barrier (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3712-3720 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Charge trapping and the generation of interface traps in thermally grown SiO2 and its interface with silicon, produced by Fowler–Nordheim tunneling injection at low temperatures from highly doped Si substrates, have been investigated. The results that can be obtained with the constant-current-injection method, when a moderate amount of charge is trapped inside the potential barrier, have been analyzed. This has afforded information about the position of the charge trapped in the oxide. No increase in the interface-trap density has been produced immediately after injection at 77 K, but, as the temperature is raised after injection, the growing of a peak of interface states has been observed. This phenomenon had been reported to be produced as a consequence of a previous hole trapping but, in this case, this intermediate stage of positive-charge building has not been observed. This effect is discussed, taking into account published models.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349222
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  • 2
    Electronic Resource
    Electronic Resource
    Evolution of electrical magnitudes in gradual p-n junctions with deep levels during the emission of majority carriers (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4946-4953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A real (nonabrupt) p-n junction has been theoretically analyzed. It consists of a graded profile of shallow dopant atoms and a uniform profile of deep impurities, their relative concentrations varying along the structure (i.e., there are regions where deep impurity concentration is highest and others where dopant concentration dominates). This type of structure was excited by majority-carrier pulses, which allowed us to describe and explain new components in the charge distribution through the junction. The change in the interpretation of results from the application of capacitance techniques to these samples is quite remarkable. The validity of the theory is verified by comparison with experimental results obtained for silicon p-n junctions highly doped with platinum. The detailed analysis of the electrical model of a gradual junction with two deep levels, located in both halves of the band gap has allowed us to explain the following: (a) the disappearance of peaks in deep level transient spectroscopy (DLTS), (b) the existence of both positive and negative signals in a majority-DLTS spectrum, and (c) decreasing capacitance and voltage transients due to the emission of majority carriers or transients in which rising and falling sections are combined. The last two points cannot be explained by using the extended model of p+-n or n+-p junctions even if the deep-level concentration NT is assumed to be of the same order as the free carrier concentration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352063
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  • 3
    Electronic Resource
    Electronic Resource
    Direct and trap-assisted elastic tunneling through ultrathin gate oxides (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5116-5124 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The direct and assisted-by-trap elastic tunnel current in metal–oxide–semiconductor capacitors with ultrathin gate oxide (1.5–3.6 nm) has been studied. Bardeen's method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current. The dependence of the assisted current on the trap distribution in energy has also been analyzed. This allows us to obtain the trap distribution in energy from experimental current curves. Finally, we have analyzed the role of the image force, the inclusion of which can avoid a barrier height dependence on the oxide thickness. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1461062
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  • 4
    Electronic Resource
    Electronic Resource
    Physical model for trap-assisted inelastic tunneling in metal-oxide-semiconductor structures (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 3396-3404 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A physical model for trap-assisted inelastic tunnel current through potential barriers in semiconductor structures has been developed. The model is based on the theory of multiphonon transitions between detrapped and trapped states and the only fitting parameters are those of the traps (energy level and concentration) and the Huang–Rhys factor. Therefore, dependences of the trapping and detrapping processes on the bias, position, and temperature can be obtained with this model. The results of the model are compared with experimental data of stress induced leakage current in metal-oxide-semiconductor devices. The average energy loss has been obtained and an interpretation is given of the curves of average energy loss versus oxide voltage. This allows us to identify the entrance of the assisted tunnel current in the Fowler–Nordheim regime. In addition, the dependence of the tunnel current and average energy loss on the model parameters has been studied. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1398603
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  • 5
    Electronic Resource
    Electronic Resource
    Role of surface-roughness scattering in double gate silicon-on-insulator inversion layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1764-1770 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface-roughness scattering on electron transport properties in extremely thin double gate silicon-on-insulator inversion layers has been analyzed. It is shown that if the silicon layer is thin enough the presence of two Si–SiO2 interfaces plays a key role, even for a very low transverse effective field, where surface-roughness scattering is already noticeable, contrary to what happens in bulk silicon inversion layers. We have studied the electron transport properties in these devices, solving the Boltzmann transport equation by the Monte Carlo method, and analyzed the influence of the surface-roughness parameters and of the silicon layer thickness. For low transverse effective fields, μSR decreases as the silicon layer decreases. However, at higher transverse effective fields, there is a different behavior pattern of μSR with Tw since it begins to increase as Tw decreases until a maximum is reached; for lower silicon layer thicknesses, surface-roughness mobility abruptly falls. Finally we have compared the behavior of μSR versus Tw for double gate silicon-on-insulator and single gate silicon-on-insulator inversion layers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1331076
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  • 6
    Electronic Resource
    Electronic Resource
    A Monte Carlo study on the electron-transport properties of high-performance strained-Si on relaxed Si1−xGex channel MOSFETs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 5121-5128 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the electron-transport properties of strained-Si on relaxed Si1−xGex channel MOSFETs using a Monte Carlo simulator adapted to account for this new heterostructure. The low-longitudinal field as well as the steady- and nonsteady-state high-longitudinal field transport regimes have been described in depth to better understand the basic transport mechanisms that give rise to the performance enhancement experimentally observed. The different contributions of the conductivity-effective mass and the intervalley scattering rate reduction to the mobility enhancement as the Ge mole fraction rises have been discussed for several temperature, effective, and longitudinal-electric field conditions. Electron-velocity overshoot effects are also studied in deep-submicron strained-Si MOSFETs, where they show an improvement over the performance of their normal silicon counterparts. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363493
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  • 7
    Electronic Resource
    Electronic Resource
    Density of states of a two-dimensional electron gas including nonparabolicity (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 4267-4269 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An expression for the density of states per unit area and unit of total energy in a two-dimensional electron gas is proposed. This density of states depends on the energy of the electrons in each subband and on the potential well function averaged in the subband by the envelope function. The resulting expression is shown to approach the density of states per unit area and unit energy, which is obtained by integrating the three-dimensional density in the potential well, in the limit of the high levels. This fact is then used for checking the validity of the expression, obtaining excellent results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355967
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  • 8
    Electronic Resource
    Electronic Resource
    A comparison of models for phonon scattering in silicon inversion layers (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4128-4129 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional (2D) and quasi-two-dimensional (Q2D) models for phonon scattering in Si-(100) inversion layers are compared. An analytical expression for an electron mobility component limited by phonons, recently reported with the 2D model, is modified by using the Q2D approach. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359500
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  • 9
    Electronic Resource
    Electronic Resource
    A comprehensive model for Coulomb scattering in inversion layers (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 924-934 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A comprehensive model for Coulomb scattering in inversion layers is presented. This model simultaneously takes into account the effects of: (i) the screening of charged centers by mobile carriers, (ii) the distribution of charged centers inside the structure, (iii) the actual electron distribution in the inversion layer, (iv) the charged-center correlation, and (v) the effect of image charges. A Monte Carlo calculation to obtain the effective mobility of electrons in an n-Si(100) inversion layer by using the model proposed for Coulomb scattering has been developed. The importance of correctly taking into account the effects above to study Coulomb scattering in inversion layers is pointed out.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356448
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  • 10
    Electronic Resource
    Electronic Resource
    Influence of negatively and positively charged scattering centers on electron mobility in semiconductor inversion layers: A Monte Carlo study (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1787-1792 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of the presence of charged centers of different sign on the electron mobility in n-channel metal-oxide-semiconductor transistors are studied by a Monte Carlo simulation. By solving the Poisson equation for the potential fluctuations, an expression for the Coulomb-scattering rate when there are charged centers of different sign is provided. In addition, it is shown that, when charges of different sign exist in the structure, local band-bending fluctuations are greater, thus resulting in lower electron mobility. In contrast, since in this case the potential mean value is lower, the influence of the charged centers on the threshold voltage is lesser. The electron mobility in compensated substrates is also analyzed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360209
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