ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Bulk silicon carbide (SiC) single crystal was fabricated by attaching abrasive SiC powderdirectly to graphite electrode. The substrate temperature was important to SiC crystal growth. When thetemperature of substrate varied from 2300K to 2600K, with substrate temperature increase, the size offinally obtained SiC single crystal increased. At 2600K, the maximum size of SiC crystal, 2cm indiameter, was obtained. The effect of temperature to SiC single crystal growth rate and the growthkinetics were discussed. The phase composition and surface morphology was studied by XRD and SEMrespectively
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.1561.pdf
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