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  • 1
    Electronic Resource
    Electronic Resource
    Generation and evolution of edge-wave packets (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 10 (1998), S. 1635-1657 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this paper the generation and evolution of an edge-wave packet are studied experimentally and numerically. In the laboratory an edge-wave packet is first generated on a sloping beach by a hinge-type wave-maker. Both the free surface displacement and velocity field are measured along several on-offshore cross sections. Numerical results are also obtained by solving the linear shallow-water wave equations and are compared with experimental data. Numerically predicted wave evolution characteristics are in good agreement with those shown by laboratory data. Analyses of the wave amplitude density spectra of both numerical solutions and experimental data show that wave packets are indeed trapped in the nearshore region and consist of a mixture of Stokes and higher-mode edge waves. Furthermore, the Stokes mode dominates in the low frequency range. Two additional wave-maker designs, i.e., the piston-type and the reverse hinge-type, are investigated numerically. Away from the wave-maker the wave forms (time histories) of the wave packets are insensitive to the details of wave-maker movements. The effects of beach slope on the evolution of wave packets are investigated. The behavior of the velocity field and the attenuation rates of runup amplitudes are also discussed. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.869682
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  • 2
    Electronic Resource
    Electronic Resource
    Photothermal ionization identification of residual donors in high purity InP grown by gas source molecular beam epitaxy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4491-4494 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Residual donors in the high purity InP epitaxial layer grown by gas source molecular beam epitaxy (GSMBE) have been identified by a photothermal ionization technique in a magnetic field. The dominant residual donors in GSMBE InP are identified to be silicon and sulfur. The Zeeman effect of the hydrogenic donors has also been investigated. The 1s–3p photothermal ionization transitions of the hydrogenic donors are observed even at zero magnetic field. The photoconductivity transition related to the LO phonon is observed and discussed. Furthermore, the photothermal ionization transitions arising from different chemical donors are also clearly resolved in a magnetic field. From the spectral peaks in magnetic field, the electron effective mass m* in GSMBE InP is estimated to be (0.0817±0.0002)m0. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363410
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  • 3
    Electronic Resource
    Electronic Resource
    Magnetospectroscopy of high-purity InP grown by gas source molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1487-1488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magneto-photoconductivity spectra related to the bound phonons and resonant polaron effect on Si donors in high-purity InP have been investigated. Not only the transition from the 1s ground state to bound phonon state (1s+LO) of Si donors, but also the antilevel crossings of the (3, 1, 0) metastable state with the bound phonon states (1s+LO) and (2p−1+LO) are clearly observed in high magnetic fields. The results demonstrate the bound phonon in Si-doped InP consists of both electron and phonon via multiphonon processes and there is a resonant interaction between LO phonons and impurity-bound electrons in InP. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120600
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  • 4
    Electronic Resource
    Electronic Resource
    Photoconductivity spectra for boron acceptors in Si1−xGex alloys (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 211-213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far infrared photoconductivity spectra of B-doped Si1−xGex grown by Czochralski technique have been investigated in the temperature region from 4.2 to 34 K as well as under high magnetic fields. The photo ionization transition from the ground state of boron acceptor to P3/2 valence band and that related to spin-orbit splitting valence band (P1/2) are observed. The experimental results show that the ionization energy of boron acceptor in Si1−xGex decreases fast and linearly with the increase of Ge concentration for lower Ge composition, and 4% Ge contents make a decrease of 14 meV for the ionization energy of boron in Si0.96Ge0.04. The photoconductivity spectra hardly change with magnetic field up to 11 T. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116463
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  • 5
    Electronic Resource
    Electronic Resource
    Intensity-dependent photoluminescence spectra of semiconductor-doped glasses (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 643-645 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The photoluminescence spectra of CdSx Se1−x doped glasses were found to be strongly dependent on the pumping laser intensity. Two spectral features corresponding to two different recombination mechanisms were identified. The dynamic behavior can be explained by the competition between tunneling-mediated recombination of deeply trapped charges and direct recombination of excitons, free and shallowly trapped carriers, and nonradiative recombination. Large (〉30 nm) blue shifts of both peaks were also observed as a function of the laser intensity.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100396
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  • 6
    Electronic Resource
    Electronic Resource
    Origin of modulation-induced mode partition and Gb/s system performance of highly single-mode 1.5 μm distributed feedback lasers (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1762-1764 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modulation-induced mode partition in distributed feedback lasers was investigated by photon statistics and bit-error-rate measurements. Its origin is explained for the first time in terms of the transient index changes and the resulting corrugation dephasing. We also propose device screening and desirable parameters for error-free operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99635
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  • 7
    Electronic Resource
    Electronic Resource
    Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 749-751 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the 10 K photoluminescence spectrum for a 6.2-μm-thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101795
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  • 8
    Electronic Resource
    Electronic Resource
    X-ray interference measurement of ultrathin semiconductor layers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1774-1776 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have characterized, using the interference structure in x-ray rocking curves, a single or double strained GaInP layer grown on an InP substrate. The measured GaInP layer thicknesses are 9±3 A(ring) and 107±3 A(ring) for the single strained layer samples and 7 A(ring)/50 A(ring) and 32 A(ring)/32 A(ring) for the double strained layer samples. The rocking curve results for the 107 A(ring) single-barrier sample and the 7 A(ring)/50 A(ring) double-barrier sample agreed well with the cross-section transmission electron microscopy data and the secondary-ion mass spectrometry data. The x-ray interference structure for the single strained barrier samples indicates the existence of many half-monolayer steps within the 1×1 mm2 x-ray beam spot at each GaInP/InP interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102189
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  • 9
    Electronic Resource
    Electronic Resource
    Metalorganic chemical vapor deposition of indium phosphide by pulsing precursors (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 987-989 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown InP by supplying precursors alternately into the reactor of a metalorganic chemical vapor deposition system. Epitaxial growth has been obtained with a substrate temperature as low as 330 °C. The growth process is mass transport limited in the temperature range of 420–580 °C. It is kinetic controlled below 400 °C. At 340 °C, we have achieved monolayer growth in each cycle, i.e., atomic layer epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101697
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  • 10
    Electronic Resource
    Electronic Resource
    High-lying thermally excited subbands of two-dimensional electron gases in GaAs/AlGaAs heterojunction for modulation-doped field-effect transistor (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3900-3905 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The cyclotron resonance of two-dimensional electron gases was directly measured on a modulation-doped field-effect transistor structure by the gate voltage ratio spectroscopy. The intersubband energies between the lowest subband and the subbands with quantum index up to i=5 were determined by resonant subband-Landau-level coupling (RSLC) under relatively low magnetic field. The experimental results were in good agreement with the self-consistent calculations including the depolarization shift and exciton-like effect corrections. The quantum index dependence of the level splitting due to the RSLC was discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365694
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