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  • 1
    Electronic Resource
    Electronic Resource
    Dependence of absorption spectrum and responsivity on the upper state position in quantum well intersubband photodetectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3062-3067 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Analytical results are derived for the intersubband absorption quantum efficiency, which take into account contributions from both bound-to-bound state and bound-to-continuum state transitions. Including the final state lifetime broadening, the absorption spectrum gradually decreases in peak strength and becomes broader from the pure bound-to-bound case to the pure bound-to-continuum situation. The physical reason for the divergence in absorption strength when the upper state is in resonance with the top of the barrier and in the absence of broadening is discussed. The detector current responsivity as a function of well width (and hence upper state position) is estimated. Calculated examples are given, covering the crossover region from the bound-to-bound case to the bound-to-continuum case. Our results compare well with experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.352989
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  • 2
    Electronic Resource
    Electronic Resource
    Dark current in quantum well infrared photodetectors (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 2029-2031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Modeling the dark current in quantum well infrared photodetectors has been a topic of much recent research, but the implications of many of the underlying assumptions have not been clarified. We attempt to justify one such model and to provide physical insight for its success. We compare the dark current expression with experiments on several samples, and show that the model provides a good approximation for a wide range of device parameters including barrier thicknesses from 250 to 700 A(ring) and number of wells from 4 to 32.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.353146
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  • 3
    Electronic Resource
    Electronic Resource
    Elastic and viscoelastic analysis of stress in thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3458-3463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The occurrence of stress in thin films has led to serious considerations of stability problems in the semiconductor industry. It may cause mechanical failure of films, such as adhesion reduction or contact peel-off, or variations in electrical properties. The existence of stress will also alter electromigration behavior for thin metal lines. The elastic stress in a multilayered structure due to thermal processing is calculated by use of the principle of mechanics balance. It is found that the variation of thickness in one film will not affect the magnitude of stress in another film. The shearing and peeling stress at the edge of a patterned structure, which is responsible for the peeling of a film at the edge, is then modeled and discussed in detail. Finally, the relaxation of stress by viscous motion of SiO2 is analyzed based on Maxwell's viscoelastic model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351420
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  • 4
    Electronic Resource
    Electronic Resource
    Long wavelength infrared photocurrent study of Si-SiGe heterostructures (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2039-2041 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on an experimental long wavelength infrared photocurrent study of a series of a Si-SiGe double-heterostructure samples. The active region is a thin heavily p-type doped SiGe layer, and the photoexcited holes due to free-carrier absorption are collected over the potential barrier resulting from the Si-SiGe valence-band offset. Photocurrent spectra with different cutoff wavelengths are observed for samples with different SiGe compositions, arising from internal photoemission in the Si-SiGe heterojunction. Photocurrents at finite biases and at zero bias (i.e., photovoltaic operation) are studied. Optimizing device parameters may lead to detector structures for large focal plane arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351149
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  • 5
    Electronic Resource
    Electronic Resource
    Infrared transmission and photocurrent study of intersubband transitions in a coupled asymmetrical quantum well structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 7560-7563 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the results of an experimental study of intersubband transitions in a coupled asymmetrical double quantum well structure. Infrared transmission and photocurrent spectra are measured at 80 K. One period of the 40-repeat quantum well structure consists of a wide Si-doped GaAs well and a narrow undoped GaAs well separated by a thin AlGaAs barrier. The intersubband transition in the wide well occurs at about 9.5 μm, and, under appropriate bias, an intersubband absorption feature in the narrow well appears at 6.2 μm. The switching between intersubband transitions at 9.5 and 6.2 μm relies on electron transfer between the wells. Our absorption measurements provide direct evidence that up to 35% of the 9.2×1011 cm−2 electrons in the wide well can be transferred into the narrow well. These transferred electrons give rise to a photocurrent peaked at 6.2 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349710
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  • 6
    Electronic Resource
    Electronic Resource
    Quantum inductance in resonant tunneling (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2705-2707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytical high-frequency model for double-barrier resonant tunneling is formulated. An inductance due to the quantum mechanical resonant lifetime (τ) is confirmed theoretically. The magnitude of the anticipated inductance is τ/G, where G is the conductance of the device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348643
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  • 7
    Electronic Resource
    Electronic Resource
    Erratum: "A novel superlattice infrared source'' [J. Appl. Phys. 63, 2856 (1988)] (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 2749-2749 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348977
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  • 8
    Electronic Resource
    Electronic Resource
    Experimental study of intersubband infrared transitions in coupled quantum wells under an electric field (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3780-3782 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The infrared absorption of a multiple quantum-well structure with coupled wells is studied experimentally. The structure consists of 40 repeats of two coupled quantum wells with a wider doped GaAs well and a narrower undoped GaAs well and AlAs barriers. A strong absorption due to an intersubband transition in the wider wells is seen at about 0.14 eV, which shifts in transition energy when a negative bias is applied and decreases in absorption strength when a positive bias is applied. The shift is due to many-body effects on the transition energy when the electron density in the wider well is reduced, and the decrease is attributed to the blocking of the final state when the upper state in the wider well is populated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346304
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  • 9
    Electronic Resource
    Electronic Resource
    Influence of the number of wells in the performance of multiple quantum well intersubband infrared detectors (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 1062-1064 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the results of a systematic study of a series of intersubband multiple quantum well detector samples having 4, 8, 16, and 32 wells. We find that while the absorption increases with the number of wells in the device, the detector current responsivity is insensitive to the number of wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351833
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  • 10
    Electronic Resource
    Electronic Resource
    Intersubband photocurrent from the quantum well of an asymmetrical double-barrier structure (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 935-940 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of intersubband photocurrents from the single quantum well of an asymmetrical double-barrier resonant tunneling structure is reported. Measured current-voltage characteristics are compared with a self-consistent calculation. The calculation also gives the density of electrons accumulated in the quantum well, and the lower and the upper resonant state escape times. Photocurrents from the quantum well are induced by 9 and 10.6 μm photons using a CO2 laser, which are directly proportional to the electron densities in the well. The observed photocurrents are much larger in the bias polarity where the thicker barrier is on the collector side consistent with theory. Our experiments show directly that a substantial accumulation of electrons occurs even for undoped quantum wells.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349602
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