ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Based on plasma dispersion of Si1−xGex, we have fabricated asymmetric 2×2 switches of total internal reflection type, in which Si1−xGex was grown by molecular beam epitaxy. The optimum intersecting angle is 4°, and the crosstalk is less than −10.6 dB at 76 mA injection current. The insertion loss is 2.8 dB, and the switch time is 0.6 μs. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.114899
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