Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
67 (1995), S. 1238-1240
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Thermally cracked nitric oxide (NO) has been used to grow heavily doped p-type ZnSe layers. Net acceptor densities as high as ∼4×1018 cm−3 were obtained, as determined by capacitance–voltage profiling, in molecular beam epitaxial growth at 250 °C. Cracker efficiency as a function of temperature and the nitric oxide flow rate is discussed and correlated with the doping level in the epitaxial layer. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.115019
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