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  • 1
    Electronic Resource
    Electronic Resource
    Electron-energy-loss spectroscopy of mass-selected ion-beam-deposited diamondlike carbon (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5063-5069 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous diamondlike carbon (DLC) films grown by low-energy mass-selected ion-beam deposition have been examined by electron-energy-loss spectroscopy (EELS). Films grown using deposition energies of 50, 120, and 300 eV have been studied. For these deposition energies, all films exhibit similar EELS characteristics indicating a very high degree of sp3 bonding. The bulk plasmon resonance is intermediate between that of graphite and that of diamond; however, the properties of the low-energy-loss spectra of the DLC films are more similar to those of diamond. The near-K-edge carbon EELS data from the films exhibit a π* feature which is much smaller than that of graphite or evaporated carbon. The use of previously proposed computational methods on the near-K-edge EELS data indicates that over 80% of the carbon atoms are sp3 bonded. The size of the π* feature is larger for smaller plasmon energies, as expected. The present data are in accord with other analyses of similar films that indicate a broad (∼30–300 eV) energy window for diamondlike film formation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357218
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  • 2
    Electronic Resource
    Electronic Resource
    Modulation by divalent metal ions of the autocatalytic reactivity of adenosine triphosphatase from chloroplasts (1981)
    s.l. : American Chemical Society
    Biochemistry 20 (1981), S. 3940-3944 
    Details
    ISSN: 1520-4995
    Source: ACS Legacy Archives
    Topics: Biology , Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/bi00516a042
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  • 3
    Electronic Resource
    Electronic Resource
    New insight into proton-induced latchup: Experiment and modeling (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 2952-2954 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A combination of irradiation experiments (using energetic protons and heavy ions) and a theoretical analysis was used, for the first time, to study proton induced single event latchup (SEL) in electronic devices. A significant difference between SEL and single event upset (SEU) was found. For SEU the device sensitivity can be predicted by a model assuming the collection of the majority of the charge carriers generated in the sensitive volume by the nuclear fragments of the (p,Si) reactions. For SEL, the measured sensitivities are much lower than predicted by prompt charge collection. Recombination of charge carriers (generated by the heavier fragments) due to a track electric field reasonably explains the SEL data.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110283
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  • 4
    Electronic Resource
    Electronic Resource
    Role of ion energy in determination of the sp3 fraction of ion beam deposited carbon films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1214-1216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of ion energy over the range 5 eV≤E≤20 keV in the production of the dense diamondlike sp3-bonded phase of carbon films deposited from ion beams has been investigated. Films with a significant sp3 component ((approximately-greater-than)40%), as determined by electron energy loss spectroscopy (EELS), can be formed over the wide energy region 30 eV≤E≤10 keV at room temperature. The sp3 fraction is completely suppressed only for E≤10 eV or E≥20 keV. For both cases, this suppression is associated with a sharp increase of the surface roughness, as determined by atomic force microscopy (AFM). The different nature of the mechanisms responsible for the suppression of sp3 bonding in both the low and high energy regions is discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115973
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  • 5
    Electronic Resource
    Electronic Resource
    Manipulation of the equilibrium between diamond growth and renucleation to form a nanodiamond/amorphous carbon composite (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 3307-3309 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Composite films of ∼10 nm nanodiamond particles embedded in an amorphous carbon matrix were formed using a double bias assisted hot filament chemical vapor deposition system with a feeding gas mixture of 1% CH4:99% H2. The structure was obtained via the equilibrium of a multistage process including: (1) bias enhanced nucleation of diamond in an amorphous carbon matrix, (2) growth of both amorphous carbon and diamond, (3) suppression of the diamond growth by the surrounding amorphous carbon matrix, and (4) bias enhanced renucleation of diamond on the new amorphous carbon boundaries. The work adds insight to the diamond nucleation and growth processes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1476721
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  • 6
    Electronic Resource
    Electronic Resource
    Smallest diameter carbon nanotubes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 2831-2833 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mass-selected carbon ion beam deposition (MSIBD) was used to demonstrate that the diameter of a carbon nanotube could be as small as 0.4 nm, the theoretical limit predicted but never experimentally reached so far. The deposition was performed at an elevated temperature much lower than the high temperatures (800–1000 °C) needed for deposition of carbon nanotubes by conventional methods. High-resolution transmission electron microscopy showed that the combination of the stress induced by the ion impact and the C migration at the temperature applied formed graphitic sheets with their normal (c axis) parallel to the surface of the silicon substrate. Some sheets closed to form multiwall nanotubes. The smallest diameter of the innermost tube was found to be 0.4 nm. The novel use of MSIBD (a pure method, catalyst free, low deposition temperature, easily applied to large surfaces without surface pretreatment capable of pattern-writing) may significantly advance the carbon nanostructure technology. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320869
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  • 7
    Electronic Resource
    Electronic Resource
    Orientation effects in tBN/cBN interfaces: A transmission electron microscopic study (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 46-48 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The orientation between cubic boron nitride (cBN) crystallites and the tBN layers on which they grow was studied using high-resolution transmission electron microscopy. BN films were prepared by radio-frequency magnetron sputtering under conditions leading to the formation of ∼100% cBN films grown on a preceding tBN layer. Two types of orientations were observed: (i) cBN layers grown on the edges of the tBN(0002) planes so that the cBN{111} planes are parallel to the tBN(0002) planes (as reported previously by many authors), (ii) cBN layers grown on curved tBN(0002) planes with no orientation to the tBN planes. The first type of cBN growth is associated with stress leading to delamination of cBN films thicker than 100 nm. The second type is associated with reduced stress enabling the growth of much thicker (∼500 nm) films at a relatively low (450 °C) substrate deposition temperature. These results may be helpful in the fabrication of thick cBN films and improving our understanding of the cBN nucleation process. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1431394
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  • 8
    Electronic Resource
    Electronic Resource
    Spheroplast-derived membrane vesicles from Rhodobacter capsulatus cells catalyzing nucleotide transport
    Amsterdam : Elsevier
    Archives of Biochemistry and Biophysics 288 (1991), S. 516-524 
    Details
    ISSN: 0003-9861
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology , Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1016/0003-9861(91)90229-C
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  • 9
    Electronic Resource
    Electronic Resource
    Nanostructure Epitaxial diamond polytypes on silicon (2001)
    [s.l.] : Nature Publishing Group
    Nature 412 (2001), S. 404-404 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Carbon is unique in the variety of configurations it can adopt with itself and other elements. Here we show how ion beams can be used to nanostructure various diamond polytypes, epitaxially aligning them to a silicon substrate. The ready controllability of ion beams, which are already used to ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/35086656
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  • 10
    Electronic Resource
    Electronic Resource
    Materials science The road to diamond wafers (2003)
    [s.l.] : Nature Publishing Group
    Nature 424 (2003), S. 500-501 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Diamond is the king of gemstones. Less well known is that it could also be an outstanding semiconductor material, superior in many ways to silicon, which is currently the most widely used electronic material. Diamond devices could operate at higher temperatures (more than 400 °C) and higher ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/424500a
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