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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 796-798 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Chemical beam epitaxy (CBE) is demonstrated here to be a suitable technique for the planarization of etched structures by selective overgrowth of InP layers. We present the fabrication of planar buried heterostructure laser diodes (PBH-LDs) with a separate confinement multiquantum well active layer grown by gas source molecular beam epitaxy and p-n InP current blocking layers grown by CBE. These lasers have been operated cw showing threshold current as low as 17 mA and maximum power up to 25 mW. We also achieved for the first time the fabrication of PBH-LD using molecular beam epitaxy techniques only.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 1173-1175 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports the first reflection high-energy electron diffraction intensity oscillation study of strained, pseudomorphic In1−xGaxAs and In1−yAlyAs grown by molecular beam epitaxy on InP substrates. Strain-induced effects are studied over a broad range (up to 3%) of positive and negative mismatch. During mismatched growth, an abnormal damping of the oscillation intensity is seen which leads to the identification of a threshold thickness above which monolayer by monolayer growth no longer occurs during uninterrupted growth. This thickness is about a factor of 5 smaller than recently calculated and measured values of the critical thickness at which dislocations appear. This observation is believed to have important implications for the growth of pseudomorphic devices.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 4307-4312 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present low-temperature photoluminescence studies of nominally undoped GaAs quantum wells in which weak acceptor-related emissions can be observed. We investigate the influence of different sequences of prelayers, in which the number and the aluminum concentration of the layers are varied, on the impurity concentration in the quantum well, and show that thin layers of low aluminum percentage act as very efficient impurity trapping centers. We also present calculations of the electron to acceptor photoluminescence line shape, which show that the acceptor distribution has its maximum at the well interface, extending about 7 A(ring) in the barrier and 12 to 30 A(ring) in the well.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1407-1408 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried heterostructure lasers fabricated using a three-step gas source molecular beam epitaxy (GSMBE) process are presented for the first time. We propose a new structure design compatible with nonselective regrowth for the blocking layers, therefore avoiding the use of a dielectric mask. The structure is terminated by a second overgrowth after a material lift-off. Preliminary results show cw operation with threshold currents of 60 mA for 800-μm-long devices and maximum output power up to 27 mW per facet.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 1211-1213 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Buried heterostructure lasers fabricated using reactive ion etching for stripe definition and gas source molecular beam epitaxy for blocking layer regrowth are presented for the first time. The structure design includes, in particular, a nonselective epitaxial regrowth step as well as a III-V material lift-off. Preliminary results show continuous wave operation with threshold currents of 43 mA and maximum output power of 17 mW per facet. This process is, in particular, very well suited for integration purposes and high yield 2 in. wafer processing.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 4524-4537 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The interaction of overlapping resonances is studied in the case of a vibrational predissociation in a linear molecule. The energy independent approach rests on the neglect of the variation of the coupling elements with the energy in the continuum. It predicts the formation of trapped and short-lived decay modes when resonances overlap. The relevance of this prediction is discussed on the basis of results obtained from two different methods going beyond this energy independent formalism. The first one consists in searching the solutions of the implicit equation derived from the Feshbach partitioning method, taking into account the full energy dependence of the local effective Hamiltonian Heff(E). The second one is the variational complex coordinate method (CCM), implemented in a discrete variable representation (DVR). The results demonstrate that the energy dependency enhances the trapping effect. The distribution of the resonance energies in the complex plane is different from the prediction of the energy independent formalism. The fast modes are found to be slower than expected. Their position is also completely shifted. The mean width is not constrained by a sum rule which is characteristic of the energy independent approximation. © 1995 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 104 (1996), S. 2222-2236 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The transition between the diabatic and the adiabatic zero order representation when the electronic potential coupling increases, is studied in the partitioning method (PM) and in the complex coordinate method (CCM) implemented in a discrete variable representation (DVR). The model is a C+ type predissociation in a diatomic system with a crossing between a Morse potential energy curve and an exponentially repulsive curve. In the weak coupling regime (isolated diabatic metastable states), both methods confirm the linear variation of the resonance widths with the strength of the electronic interaction, as expected in a perturbative treatment. When the coupling is large in the diabatic representation (strong overlap regime), the formation of narrow resonances supported by the upper adiabatic potential can be related, in PM, to the process of avoided resonance overlapping among interfering states. The complete change of representation can be described in the initial diabatic basis set in PM. However, the full energy dependence of the discrete-continuous matrix elements must then be taken into account. The deformation and the final splitting of a diffuse spectral line with increasing coupling is re-examined in terms of these energy dependent eigenvalues of the effective Hamiltonian. The use of the appropriate representation, either diabatic or adiabatic, according to the strength of the electronic coupling, has been found decisive in CCM so as to observe the correct migration of the resonance positions towards the zero order adiabatic states, and the decrease of their widths. No relevant results have been obtained for the intermediate strength of the coupling in CCM. Analytical expressions for the derivative coupling matrix elements (∂/∂R) in the fixed node DVR (corresponding to the particle-in-a-box wave functions) have been established. © 1996 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 108 (1998), S. 8931-8943 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The potential energy surfaces of the three low lying electronic states of NO2, namely the X˜ 2A1, A˜ 2B2, and B˜ 2B1 states, and the transition dipole moment surfaces between the ground state and both excited states have been calculated at two levels of ab initio theory; complete active space self-consistent field (CASSCF) and internally contracted multireference configuration interaction (CMRCI). Only 9 points of these surfaces, located around the equilibrium geometry of X˜ 2A1 and corresponding to C2v geometries, have been found sufficient for calculating the cross section, in the 10000–45000 cm−1 energy range, by means of a 2D version of the reflection method. The agreement between the experimental low resolution data and the ab initio absorption cross section is satisfactory, mainly at the CMRCI level, at which the energy at maximum amplitude, the width, the maximum amplitude and the effective transition dipole moment describing both involved electronic transitions are predicted within 4%, 6%, 20%, and 11%, respectively. The sources of errors coming from the reflection approximation and from the level of ab initio approximation are analyzed on the basis of test calculations. The relative importance of the different contributions to the total cross section (both electronic transitions, cold and hot bands) is also discussed. In addition, quantum calculations based on Franck–Condon factors have been performed in order to improve the description of the low energy part of the cross section and to interpret the observed radiative lifetimes. © 1998 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 1535-1545 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Fourier transform spectroscopy and intracavity laser absorption spectroscopy are used to record the absorption spectrum of formic acid at high spectral resolution, in the ranges of the 2νOH (6968.258 cm−1) and 4νOH (13 284.075 cm−1) vibrational bands of the trans-rotamer, respectively. Numerous perturbations combined with a large line density limit the extent to which the vibration–rotation analysis is performed. Some 689 lines are assigned in the first overtone band and related vibration–rotation constants are determined. Only the band origin and upper state principal A-rotational constant are determined for the n=4 overtone band, because of much higher spectral density. Interpolation, helped by literature data, provides all missing principal rotational constants in the nOH series, for n=1 to 4. All major vibration–rotation parameters appear to evolve very smoothly along the series. This trend is fully supported by ab initio calculations performed at the MP2/cc-pVTZ level of theory and based on an effective one-dimensional model describing the OH local mode stretching vibration. Results of these calculations are detailed in terms of the mean nuclear structure in the excitation series, up to n=4. The related calculated dipole moment surface allows the experimental a:b subband intensity ratio in the series to be interpreted in terms of a decrease in the HOC angle, from Θ(approximate)90° (n=1) to 44°(n=4). The potential occurrence of a proton exchange mechanism between the two oxygen nuclei, close to a tautomerism mechanism, is discussed. © 2000 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 88 (1988), S. 2091-2093 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Gaussian basis functions have been used in explicitly correlated configuration interaction calculations for the ground states of H2, HeH+, and H+3. Due to the use of rij, the polarization functions are found to be much less important in comparison with their effectiveness in the convectional CI methods. Our lowest ground state energies for H2 and HeH+ are 1.8 and 8 cm−1, respectively, above the best literature values obtained by using generalized James–Coolidge expansion in terms of confocal elliptical coordinates. With 10s and 2p contracted functions, the calculated ground state energy for H+3 is −1.343 500 hartrees, which is believed to be the lowest variational energy in the literature.
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