Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
65 (1994), S. 2807-2808
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this investigation, Czochralski grown silicon (CZ-Si) was irradiated by a fast neutron which can introduce irradiated defects into silicon and change the quality and density of point defects in silicon, by the interaction between irradiated defects and oxygen, the controlled precipitation of oxygen, and an excellent intrinsic gettering structure in CZ-Si during heat treatment cycles can be obtained easily. © 1994 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.112572
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