Publication Date:
2017-12-14
Description:
In this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.
Print ISSN:
1757-8981
Electronic ISSN:
1757-899X
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
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