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  • 1
    Electronic Resource
    Electronic Resource
    Stress evolution due to electromigration in confined metal lines (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 3790-3799 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electromigration is an important concern in very large scale integrated circuits. In narrow, confined metal interconnects used at the chip level, the electromigration flux is resisted by the evolution of mechanical stresses in the interconnects. Solutions for the differential equation governing the evolution of back stresses are presented for several representative cases, and the solutions are discussed in the light of experimental as well as theoretical developments from the literature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354073
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  • 2
    Electronic Resource
    Electronic Resource
    Stress-induced nucleation of voids in narrow aluminum-based metallizations on silicon substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6774-6781 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This work investigates thermal stress-induced voiding, and void nucleation in particular, in narrow, passivated aluminum-based metallizations on silicon substrates. After excursions to a higher temperature, the thermal stress is tensile, and increases during cooldown to room temperature, after which it relaxes with time. Experiments conducted on two aluminum alloy metallizations suggest that stress-induced void nucleation is a one shot phenomenon during cooldown from the heat treatment temperature. Further, the high thermal stresses present, and the strong constraints against deformation provided by the substrate and passivation layer, make void nucleation unique in narrow passivated metallizations. Finally, voids always appear to be connected to grain boundaries. The above experimental evidence and theoretical considerations together suggest that grain boundary sliding is the main mechanism facilitating void nucleation in passivated aluminum alloy metallizations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349852
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  • 3
    Electronic Resource
    Electronic Resource
    Stress relaxation of passivated aluminum line metallizations on silicon substrates (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1748-1755 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In the present study, the Eshelby theory of inclusions is applied to model the stresses arising after heat treatment at 400 °C in aluminum line metallizations, embedded in silicon/passivation matrix. The stresses obtained are about 200 MPa higher than the ones previously reported. Moreover, the stresses in the axial and width directions of the lines are shown to be on the same order, while the normal stress is smaller, especially in the lines of low thickness-to-width ratio. A modification of the familiar sin2 ψ method of x-ray stress measurement is presented to deal more accurately with the [111]-fiber texture present in the aluminum lines studied. The lateral and normal stresses in the aluminum metallizations after a heat treatment at 400 °C are measured in room temperature by x-ray diffraction from 4 h after the heat treatment at 400 °C up to 3 months. The experimental results are well in accord with predictions obtained from the Eshelby model. Particularly, the lateral stresses are found to be about equal, while the initial normal stress is smaller, but eventually becomes the largest stress component. Dislocation mechanisms to rationalize the present observations are discussed: at longer times, diffusion-controlled dislocation climb and void growth connected to it appear to be the most important mechanisms to relieve the stress, while during cooling dislocation glide is also significant.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347222
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  • 4
    Electronic Resource
    Electronic Resource
    Mechanisms of thermal stress relaxation and stress-induced voiding in narrow aluminum-based metallizations (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 8083-8091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermal stress-induced voiding in narrow aluminum-based metallizations used as interconnects in microelectronic circuits has recently become a serious reliability concern. Room-temperature stress relaxation and associated physical phenomena in passivated and unpassivated aluminum-based metallizations, subsequent to exposure to high temperatures, are analyzed based both on theoretically estimated and experimentally determined thermal stresses. It is shown that stress relaxation at longer times involves mainly dislocation climb, while short-term relaxation during cool down from higher temperatures, and immediately thereafter, involves significant dislocation glide. Void growth, frequently observed in passivated metallizations, provides a new source of atoms to feed stress relaxation by the same processes as in the absence of voiding.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347457
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  • 5
    Electronic Resource
    Electronic Resource
    Analysis of thermal stress-induced grain boundary cavitation and notching in narrow Al-Si metallizations (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 31-33 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Grain boundary voiding and notching have been found to produce failures in narrow metallizations during thermal aging. The nucleation and growth of grain boundary voids are considered to occur as a result of grain boundary sliding and the subsequent stress-induced mass transport. A proposed model yields the linewidth and temperature dependence of the observed failure rate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100113
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  • 6
    Electronic Resource
    Electronic Resource
    Cluster interactions and stress evolution during electromigration in confined metal interconnects (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 439-441 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In narrow metal interconnects used in advanced integrated circuits, electromigration flux divergences occur at the intersection between polycrystalline cluster segments (where grain boundaries offer a fast diffusion path), and bamboo segments (where there are no grain boundaries along the line length). In confined, passivated metal interconnects, these flux divergences are linked to the evolution of significant mechanical stresses in the metal. A quasisteady state stress distribution builds up quickly in the cluster segments and remains unchanged until the stress profiles between cluster segments begin to overlap, and the clusters begin to "interact.'' A significant increase in stress above the quasisteady state can result from cluster interactions, increasing the potential for electromigration and stress-induced damage. If the cluster separation is small, this stress increase can occur on a time scale which is short compared to the stress evolution of the interconnect line as a whole. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114625
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  • 7
    Electronic Resource
    Electronic Resource
    Microstructure based statistical model of electromigration damage in confined line metallizations in the presence of thermally induced stresses (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4995-5004 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Probability distributions are evaluated for electromigration induced open failures in narrow, passivated interconnects with a near-bamboo grain structure. Void formation is initiated at the cathode ends of the polycrystalline line segments or "grain clusters.'' If these clusters are longer than a critical size Lc, they can accommodate enough atoms for voids to reach the critical size to fail the line. Obviously, the critical size Lc depends on the thermal stress: a cluster under a tensile stress is able to incorporate more atoms from the void than an unstressed cluster. In the case the clusters are shorter than Lc, atoms from the voids must be distributed also to bamboo sections, outside the clusters, in order for the voids to induce open failures. Based on this physical picture, failure probabilities are evaluated as a function of time. The predicted failure distributions and parametric dependencies compare well with the experiments.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354305
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  • 8
    Electronic Resource
    Electronic Resource
    The effect of environments on fatigue-crack propagation in an ultra-high-strength steel (1967)
    Springer
    International journal of fracture 3 (1967), S. 29-36 
    Details
    ISSN: 1573-2673
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Description / Table of Contents: Résumé L'influence de divers environnements gazeux sur le taux de croissance des fissures de fatigue à température ambiante d' un alliage à 0,451o de carbone d' un acier à très haute résistance trempé à 400 F. et à800 F.àétéétudiée.La sensibilité du taux de croissance des fissures de fatigue à l' humidité dans cet acier a été trouvée dépendre de la resistance à la cassure de ce matériau.
    Abstract: Zusammenfassung Der Einfluss verschiedener Gasatmosphären auf die Zunahme von Ermüdungsrissen Raumtemperatur wurde untersucht an ultrahochfesten Kohlenstoffstahlen von niedriger Legieiung, welche bei 205 C. (400 F.) and 427 C. (800 F.) getempert wurden. Es wurde die Abängigkeit zwischen der Bruchstärke dieses Stables and der Einwirkung auf die Fortpflanzung von Ermudungsrissen durch Feuchtigkeit gefunden.
    Notes: Abstract The influence of various gaseous environments on the rate of fatigue crack growth at room temperature in an 0.45 percent carbon low-alloy ultra-high-strength steel tempered at 400°F and at 800°F has been investigated. The sensitivity of the rate of fatigue crack growth to moisture in this steel is found to be dependent on the fracture toughness of the material.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00188643
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  • 9
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    Morphology of aluminum oxide particles in nickel (1972)
    Springer
    Details
    Publication Date: 1972-06-01
    Print ISSN: 1073-5623
    Electronic ISSN: 1543-1940
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Springer
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  • 10
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    The effect of environments on fatigue-crack propagation in an ultra-high-strength steel (1967)
    Springer
    Details
    Publication Date: 1967-03-01
    Print ISSN: 0376-9429
    Electronic ISSN: 1573-2673
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Published by Springer
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