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  • 1
    Electronic Resource
    Electronic Resource
    Free-carrier absorption of Hg1−xCdxTe epitaxial films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 7738-7742 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Free-carrier absorption (FCA) of Hg1−xCdxTe epitaxial films is analyzed by considering the composition-in-depth nonuniformity of epilayers. The results show that epilayers exhibit different FCA behavior from bulk materials. Based on the analyses, the carrier concentration, the density and size distribution of Te precipitates, as well as the inclusion in Hg1−xCdxTe epilayers are derived from fitting the measured FCA spectra. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362342
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  • 2
    Electronic Resource
    Electronic Resource
    Empirical rule of intrinsic absorption spectroscopy in Hg1−xCdxTe (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1234-1235 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An empirical formula for the calculation of the intrinsic optical absorption coefficient at the Kane region is derived as α=αg exp[β(E−Eg)]1/2 from the measured absorption spectra in the whole intrinsic absorption region for Hg1−xCdxTe with different composition x from 0.170 to 0.443. The parameter β depends on composition x and temperature T, β=24−18x at 300 K and β=5.4+11x at 77 K. The calculated results from this simple empirical formula also agree well with those derived from the Kane model.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356464
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  • 3
    Electronic Resource
    Electronic Resource
    Reaction of tetraorganyltelluriums with acetylenes (1993)
    s.l. : American Chemical Society
    Organometallics 12 (1993), S. 473-477 
    Details
    ISSN: 1520-6041
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/om00026a034
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  • 4
    Electronic Resource
    Electronic Resource
    Magnetic properties of Ti/Fe double layers grown on MgO(100) by direct current magnetron sputtering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 4943-4945 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The purpose of this work is to investigate the magnetic properties of Ti(tTi)/Fe(104 Å) bilayers deposited by dc magnetron sputtering onto MgO(100) substrates. In-plane ferromagnetic resonance (FMR) has been used to measure the resonance field HR and linewidth ΔH as a function of the azimuthal angle and Ti layer thickness. The FMR spectra were obtained at room temperature and at a microwave frequency of 12.3 GHz. The dependence of ΔH with respect to the azimuthal angle is explained by taking into account the combined effects of intrinsic damping and angular dispersion of the cubic axes. The dependence of the magnetic relaxation on Ti thickness exhibits two different regimes. It decreases for the first Ti layers (tTi〈30 Å) and increases up to a saturation value for Ti thickness around 90 Å. Other magnetic parameters such as effective magnetization, magnetocrystalline, and perpendicular anisotropies are also discussed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370053
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  • 5
    Electronic Resource
    Electronic Resource
    Enhanced room temperature magnetoresistance response in textured La0.7Sr0.3MnO3 strips made by pulsed laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6770-6772 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetoresistive La0.7Sr0.3MnO3 polycrystalline films have been deposited by high laser pulse energy pulsed laser deposition that exhibit an extreme variability in the temperature of the resistance maximum, Tp, as a function of the deposition conditions. Films have been deposited that exhibit the resistance maximum at temperatures ranging from 155 to 360 K as a function of laser pulse energy and shadowing conditions. High laser pulse energies, shadowing to eliminate film particulates, and a specific laser pulse rate range, were necessary to synthesize films with the temperature of the resistance maximum elevated to room temperature. The room temperature low field magnetoresistive response of samples with Tp approximately room temperature was highly anisotropic with respect to applied magnetic fields in plane and perpendicular to the plane. The (110) textured films exhibited an enhanced low field magnetoresistance compared to films with appreciable (111) texture. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372836
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  • 6
    Electronic Resource
    Electronic Resource
    An investigation of the voltage-withstanding mechanism of BaTiO3 ceramic semiconductors (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4629-4631 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The voltage-withstanding behavior of a BaTiO3 ceramic semiconductor is closely related to the grain boundary structure of this kind of ceramic. This mainly depends on the height of the potential barrier in the grain boundary. A novel concept of the barrier height per unit width is proposed, by which the voltage-withstanding mechanism can be satisfactorily explained. Positive temperature coefficient devices of high performance have been developed, which possess resistivity (〈102Ω cm) at room temperature and high withstanding voltage (〉300 V/mm).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339008
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  • 7
    Electronic Resource
    Electronic Resource
    Nanophase dispersed SmCo films with high remanence and corrosion resistance (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6128-6130 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nanophase dispersions of SmCo5 in either an Al or Co matrix have been synthesized by using pulsed laser deposition to deposit the SmCo aggregated grains while simultaneously sputtering either Al or Co. Smooth single phase type hysteresis loops were measured for both types of dispersed systems. SmCo5 plus Al dispersions were made that exhibited room temperature coercivities of 15 kOe with (approximate)5 at. % Al and decreased to 5.7 kOe with 21 at. % Al. The SmCo5 plus Al dispersions were only marginally affected by heating in air for 30 min to 300 °C. It was possible to make SmCo5 plus Co films with loop squareness of (approximate)0.83 and with room temperature coercivity (approximate)10 kOe by using a Co matrix. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372631
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  • 8
    Electronic Resource
    Electronic Resource
    Ferromagnetic resonance linewidth and anisotropy dispersions in thin Fe films (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 7316-7320 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In-plane ferromagnetic resonance (FMR) has been used to study the room-temperature linewidth ΔH of single crystal Fe films grown by dc magnetron sputtering onto MgO(100) substrates. Several samples were grown with the film thickness in the range 70 Å〈tFe〈250 Å. The measurements were carried out in the frequency range from 7.0 to 12.3 GHz. A phenomenological model for the FMR linewidth was developed that includes simultaneous effects due to intrinsic damping and angular dispersions of the cubic and uniaxial axes of anisotropy. These angular dispersions are found to be responsible for the relatively larger linewidths observed as a function of the in-plane field direction with fixed frequency, and as a function of frequency for the easy and hard directions as well. The behavior of the linewidth with the film thickness can be described by a sum of a constant volume term plus a term proportional to 1/tFe, representing the relaxation due to the misfit dislocations. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369355
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  • 9
    Electronic Resource
    Electronic Resource
    Evaluation of densities and mobilities for heavy and light holes in p-type Hg1−xCdxTe molecular beam epitaxy films from magnetic-field-dependent Hall data (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 4327-4331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The densities and mobilities of heavy and light holes have been simultaneously determined at various temperatures (1.2–300 K) in two molecular beam epitaxy-grown p-type Hg1−xCdxTe (x=0.224) samples from variable magnetic-field Hall measurements. The separation of the contribution from the light hole and heavy hole was achieved by a hybrid approach consisting of mobility spectrum analysis followed by a multicarrier fitting procedure. An acceptor energy level at ∼13 meV above the valence band, as well as various mass ratios of light to heavy holes for different temperature were obtained. In addition, the minority carrier (electron) and the surface two-dimensional electron concentrations and mobilities have also been derived as a function of temperature. The explicit experimental values obtained in this work should be useful to physics and modeling of HgCdTe infrared detectors. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368652
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  • 10
    Electronic Resource
    Electronic Resource
    Transport properties of Hg0.80Mg0.20Te grown by molecular beam epitaxy (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6170-6173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Variable magnetic-field Hall measurement has been used to investigate the transport properties in Hg0.80Mg0.20Te molecular beam epitaxy films in the temperature range from 1.5 to 250 K. The experimental data have been analyzed by using a hybrid approach consisting of the mobility spectrum (MS) technique followed by a multicarrier fitting (MCF) procedure. Both the Shubnikov–de Haas measurements and the hybrid MS+MCF approach show three- and two-dimensional electronic behaviors. The two-dimensional electrons, with mobility in the range of 1–3×103 cm2/V s and a sheet density about 1012 cm−2, are found and come from an accumulation layer near the HgMgTe–CdTe interface or the HgMgTe–vacuum interface. The temperature-dependent evolution of the bulk electron mobility indicates that the scattering mechanism in HgMgTe is very similar to that in HgCdTe, that is, ionized impurity scattering dominates at low temperature while lattice scattering dominates above 100 K. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368932
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