ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Floating gate effects in high-power semiconductor-metal eutectic composite transistors (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2861-2865 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Novel field-effect transistors (FETs) with unusual high-power capabilities have been demonstrated previously. They are fabricated using the grown-in metal-semiconductor junctions of semiconductor-metal eutectic composite materials. Here, computer modeling has been used to examine the relation between their exceptional resistance to avalanche breakdown and the effects of floating gate junctions between the gate and drain. Calculations are presented that show how composite geometry and materials parameters could be optimized to give extremely large off-state blocking voltages combined with low series resistance. These transistors should, in principle, be capable of an on-state power dissipation lower than that of any conventional high-voltage FET device.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349349
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Electrical microcharacterization of Si-TaSi2 eutectic composite transistors by three-terminal electron-beam-induced conductivity (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1011-1015 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new three-terminal electron-beam-induced conductivity technique, which images microscopic current characteristics, has been used to examine the effects of device and material microstructure on macroscopic performance of Si-TaSi2 eutectic composite transistors. Image contrast arising from current-limiting electron velocity saturation regions shows that current control is not microscopically uniform due to the somewhat irregular distribution of active gate elements. Macroscopically, these nonuniformities result in delayed saturation in the I-V characteristics and excess leakage current when the device is pinched off. Furthermore, the effects of the uncontacted floating gate elements, which are responsible for the unique high-voltage capability of these transistors, are graphically observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349682
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Silicon epitaxial growth on Si-TaSi2 eutectic composite substrates (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2815-2817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial layers of Si were grown by atmospheric chemical vapor deposition on two-phase, Si-TaSi2 eutectic composite substrates. Characterization by scanning electron microscopy, transmission electron microscopy, and x-ray double-crystal rocking curve analysis showed very good crystallographic and microstructural quality. Epilayer areas lying over the TaSi2 regions of the substrate in most cases showed no defect structures. In some cases, pores or dislocations originating at the Si-TaSi2 interface were observed. Epilayers such as these should enable the integration of conventional silicon devices with the novel ones made possible by these unique composite structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104745
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Laser zone-melted Bi-Sr-Ca-Cu-O thick films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1683-1685 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Directionally solidified superconducting Bi-Sr-Ca-Cu-O thick films have been fabricated by laser zone melting. Highly aligned grain structures were obtained. Films with no post-processing anneal showed Tc(R=0)=82 K and transport critical current densities Jc as high as 450 A/cm2 at 77 K and 5400 A/cm2 at 60 K. After annealing for 65 h at 850 °C, Tc increased to 85 K, and the best sample showed Jc =2200 A/cm2 at 77 K and 11 200 A/cm2 at 60 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102315
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Superconducting Bi-Sr-Ca-Cu-O films by magnetron sputtering of single Bi2O3-SrF2-CaF2-CuO targets (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 922-924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting Bi-Sr-Ca-Cu-O films have been fabricated by rf magnetron sputtering using single mixed Bi2O3-SrF2-CaF2-CuO targets. Uniform, reproducible films were formed on SrTiO3 substrates with zero resistance as high as 78 K. Grain morphology and orientation were affected by annealing temperature and the F content of the films. The final films showed excellent environmental and mechanical stability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100160
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Novel high quantum efficiency Si-TaSi2 eutectic photodiodes (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 267-269 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A high quantum efficiency photodiode has been fabricated using the in situ junctions in a Si-TaSi2 eutectic composite. Due to the three-dimensional distribution of junctions in this photodiode, it yields a nearly constant quantum efficiency of about 50% between 450 and 1000 nm. In addition, the average lateral distance between junctions of only 8 μm gives this novel photodiode an inherently good spatial resolution for photodiode array applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98469
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Depletion zone limited transport in Si-TaSi2 eutectic composites (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1964-1970 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Depletion zones surrounding aligned, cylindrical, metal-semiconductor junctions formed during the directional solidification of a eutectic mixture are shown to influence the transport properties of the composite. Hall-effect and direct depletion zone width measurements made using the electron beam induced current technique of the scanning electron microscope have demonstrated that a relatively small total volume fraction (∼10%) of depleted material can lead to a significant increase in resistivity. The sensitivity of the resistivity of the composite to the depleted zone volume is attributed to a cellular distribution of the TaSi2 rods which causes substantial current streamlining. An analysis of the dopant segregation that occurs in the Si matrix of the composite boule during solidification supports the depletion zone limited transport model. The dependence of the resistivity on the depleted zone volume fraction of the composite indicates that the switching action in this novel material is achievable by increasing the volume fraction of depleted material between a source and drain contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341095
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Capacitance transient analysis of configurationally bistable defects in semiconductors (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 2628-2633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Configurationally bistable defects can exist in either of two different structural configurations for the same charge state. Each configuration exhibits distinct optical and electronic properties. Here a framework is presented for the use and interpretation of deep level capacitance transient spectroscopy measurements in the study of these defects. Examples are presented for the MFe center in InP, a bistable A-center-related defect in Si, and the EL2 center in GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.335892
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Vacuum field emission from a Si-TaSi2 semiconductor-metal eutectic composite (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2094-2096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on measurements of vacuum field emission from ungated field emission cathode arrays fabricated from Si-TaSi2 eutectic composite wafers. The Si-TaSi2 material is an ideal candidate for large area field emission array cathodes due to the large density of TaSi2 fibers incorporated into the Si matrix, the high melting point of the TaSi2 material, the ease with which single-crystal large diameter (2.5 cm) material can be fabricated, and the promise of integrability of the field emission array with conventional Si technology through the use of epitaxial Si layers grown on the cathode backplane.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106113
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Thione analogs of 1,8-naphthalic anhydride. The first cyclic trithioanhydride (1984)
    s.l. : American Chemical Society
    Journal of the American Chemical Society 106 (1984), S. 6084-6085 
    Details
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ja00332a058
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...