ISSN:
1573-482X
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Abstract The result of bulk lifetime measurements in high purity silicon are presented. For this investigation we offer a new method and technique for determination of the bulk value of the excess carrier lifetime in high purity silicon. The effective value of the lifetime being measured in such a material depends on the dimensions of the ingot. In our method the sample to be investigated is illuminated by the modulated radiation of the AlGaAs light-emitting diode (LED), which generates the excess carriers, and by the probe beam of the He-Ne laser (λp = 3.39 μm), which becomes modulated when passing through the sample. The bulk lifetime is determined by the analysis of the dependence of the phase shift between these two modulations versus the distance r between the points on the sample surface illuminated by the sources.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1018558500090
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