Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 1680-1682
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Amorphous silicon films (a-Si:H) with a hydrogen content of 10 at. % were crystallized employing a step-by-step crystallization method. Structural changes during the sequential crystallization process were monitored by Raman spectrometry. Initially, at low laser fluences EL, a two-layer system is created. Independent of the thickness of the a-Si:H layer explosive crystallization of a thin surface layer is observed at EL≥100 mJ/cm2 confirming recent theoretical results. Crystallization is accompanied by dehydrogenation. In completely crystallized poly-Si a residual H concentration of up to 5 at. % was observed. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126134
Permalink
|
Location |
Call Number |
Expected |
Availability |