Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 2144-2146
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We propose a simple technique which allows the growth of low defect density GaAs films on Si substrates. This technique is based on conformal vapor phase epitaxy and uses a Si3N4 capping layer, as well as the Si surface itself for growth confinement. The as-grown conformal GaAs films exhibit a spectacular reduction in the density of dislocations, because of the latter blocking either on the Si3N4 cap or on the Si substrate. Dislocation densities below 5×105 cm−2 have been obtained in submicrometer-thick conformal GaAs films.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.107064
Permalink
|
Location |
Call Number |
Expected |
Availability |