ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
Indium-zinc oxide (IZO), with Zn/(Zn+In)=0.33 - 0.78, films were deposited by the sol-gel method. Effects of Zn/(Zn+In) atomic ratio and annealing temperature on the structural, electrical and optical properties of IZO thin film were investigated. Films of Zn/(Zn+In)=0.33 prepared at 600°C had the lowest resistivity value, 4.48X10〈sup〉 -2 〈/sup〉 Ω cm (carrier concentration=3.83X 10〈sup〉18〈/sup〉 cm〈sup〉-3〈/sup〉 and mobility=25.54 cm2/Vs), and the structure of these films matched that of Zn〈sub〉2〈/sub〉In〈sub〉2〈/sub〉O〈sub〉5〈/sub〉 film. Average optical transmittances of all films were above 80% in the visible range. The highest average transmittance was observed at Zn/(Zn+In)=0.5, with 86.8% in the visible range
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/08/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.449-452.469.pdf
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