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  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties of Pr-Fe-B alloy powders prepared by mechanical grinding : The 5th Joint MMM−Intermag Conference (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 6591-6593 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ball milling on the magnetic properties of the Pr15Fe80B5 alloy, whose as-cast structure was composed of matrix phase Pr2Fe14B and Pr-rich and α-Fe phases, has been investigated by measuring iHc, thermomagnetic curves, and x-ray diffraction (XRD) patterns. By ball milling using a planetary ball mill up to 96 h, iHc decreased with the amorphization of the matrix and Pr-rich phases. However, subsequent heat treatments gave rise to the marked increase of iHc. The alloy, after 48 h of ball milling and subsequent 600 °C annealing possessed iHc of 17.4 kOe, Br of 5.8 kG, and (BH)max of 6.5 MGOe. This alloy showed sharp diffraction peaks of Pr2Fe14B phase, while the α-Fe phase peak, which persisted through the ball milling process, almost disappeared. The high iHc of the Pr-Fe-B alloy, subjected to optimum milling and subsequent annealing, was attributed to a very fine Pr2Fe14B phase precipitation from the amorphous state and to the effective solution of the α-Fe phase into the matrix phase. Also, a small addition of Cu to the Pr15Fe80B5 alloy was found to increase the coercivity. Further, the alloy milled for 12 h and annealed at 600 °C for 1 h showed iHc of 19.7 kOe, Br of 7.0 kG, and (BH)max of 10.2 MGOe.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349867
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  • 2
    Electronic Resource
    Electronic Resource
    Soft magnetic properties of nanocrystalline Fe-Hf-C-N films : 38th Annual Confrerence on Magnetism and Magnetic Materials (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5785-5787 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Fe-Hf-C-N films with excellent soft magnetic properties were fabricated by Ar+N2 reactive sputtering for the first time. The newly developed films were found to have better soft magnetic properties than those of Fe-Hf-C or Fe-Hf-N films. The best magnetic properties achieved in this work are Hc of 0.15 Oe, μeff of 8200, and 4πMs of 17 kG. The thermal stability of the Fe-Hf-C-N films was also found to be excellent, e.g., Hc was less than 0.3 Oe and μeff was about 4000 for the films annealed up to 700 °C. It was observed by transmission electron microscopy that the films consisted of two phases: a fine crystalline α-Fe phase whose grain size is about 6 nm, and Hf(C,N) precipitates with a size of less than 2 nm. The fine grained α-Fe structures, together with finely dispersed Hf(C,N) precipitates, is considered to be one of the main factors for the excellent magnetic properties and thermal stability.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355562
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  • 3
    Electronic Resource
    Electronic Resource
    Electrode contacts on ferroelectric Pb(ZrxTi1−x)O3 and SrBi2Ta2O9 thin films and their influence on fatigue properties (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 5073-5078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation (fatigue) of dielectric properties of ferroelectric Pb(ZrxTi1−x)O3 (PZT) and SrBi2Ta2O9 thin films during cycling was investigated. PZT and SrBi2Ta2O9 thin films were fabricated by metalorganic decomposition and pulsed laser deposition, respectively. Samples with electrodes of platinum (Pt) and ruthenium oxide (RuO2) were studied. The interfacial capacitance (if any) at the Pt/PZT, RuO2/PZT, and Pt/SrBi2Ta2O9 interfaces was determined from the thickness dependence of low-field dielectric permittivity (εr) measurements. It was observed that a low εr layer existed at the Pt/PZT interface but not at the RuO2/PZT and Pt/SrBi2Ta2O9 interfaces. In the case of Pt/PZT, the capacitance of this interfacial layer decreases with increasing fatigue while the εr of the bulk PZT film remains constant. This indicates that fatigue increases the interfacial layer thickness and/or decreases interfacial layer permittivity, but does not change the bulk properties. For the capacitors with RuO2/PZT/RuO2 and Pt/SrBi2Ta2O9/Pt structures, however, the εr does not change with ferroelectric film thickness or fatigue cycling. This implies no interfacial layer exists at the interfaces and which can be correlated to the observed nonfatigue effect. Additionally, the equivalent energy-band diagrams of these different capacitor structures were proposed to complement the proposed fatigue mechanism. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359737
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  • 4
    Electronic Resource
    Electronic Resource
    Long-wavelength infrared photodetectors based on InSbBi grown on GaAs substrates (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2298-2300 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate the operation of InSbBi infrared photoconductive detectors grown by low-pressure metalorganic chemical vapor deposition on semi-insulating GaAs substrates. The fabricated photodetector showed a cutoff wavelength of 7.7 μm at 77 K. The responsivity of the InSbBi photodetector at 7 μm was about 3.2 V/W at 77 K. The corresponding Johnson-noise limited detectivity was 4.7×108 cm Hz1/2/W. The carrier lifetime was estimated to be about 86 ns from the voltage-dependent responsivity measurements. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120429
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and characterization of InSbBi for long wavelength infrared photodetectors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3266-3268 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The epitaxial growth of InSbBi ternary alloys by low-pressure metalorganic chemical vapor deposition is reported on. X-ray diffraction spectra showed well resolved peaks of InSbBi and InSb films. Bi incorporation was confirmed by energy dispersive x-ray analysis. Photoresponse spectrum up to 9.3 μm which corresponds to 0.13 eV energy band gap has been measured in a sample with Bi composition of 5.8 at.% at 77 K. Electron mobility at room temperature ranges from 44 100 to 4910 cm2/Vs as Bi composition increases. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119158
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  • 6
    Electronic Resource
    Electronic Resource
    Soft magnetic properties of as-deposited Fe–Hf–C–N and Fe–Hf–N nanocrystalline thin films : The 7th joint MMM-intermag conference on magnetism and magnetic materials (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6652-6654 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As-deposited Fe–Hf–C–N nanocrystalline thin films are investigated to improve soft magnetic properties by controlling both the compositions of the films and sputtering conditions, such as input power and N2 partial pressure. As-deposited Fe–Hf–N thin films are also investigated for the applications to simplify the fabrication of magnetic devices. The as-deposited Fe–Hf–C–N and the as-deposited Fe–Hf–N thin films are fully nanocrystallized during deposition by controlling the composition and sputtering condition. The thin films show the excellent soft magnetic properties of saturation magnetization ∼17.5 kG/∼16.5 kG and coercivity ∼0.5 Oe/∼0.5 Oe when the compositions of each film are 6.8–7.2 at % Hf, 2.0–2.5 at % C, 9.8–10.8 at % N, and balanced Fe/6.3–7.0 at % Hf, 13.2–14.0 at % N, and balanced Fe, respectively. Both of the thin films exhibit an outstanding frequency dependence of permeabilities, i.e., the effective premeabilities of the films remain flat over 3000 up to 100 MHz. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367526
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  • 7
    Electronic Resource
    Electronic Resource
    Processing of a uniaxial ferroelectric Pb5Ge3O11 thin film at 450 °C with c-axis orientation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2487-2488 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Uniaxial Pb5Ge3O11 thin films were successfully fabricated by the sol-gel processing route. Crack-free and c-axis oriented thin films (1600 A(ring)) were observed on (111) Pt-coated Si substrates when heat treated at 450 °C for 15 min. The thin films exhibited well saturated P-E hysteresis loops with Pr=3.3 μC/cm2, Ps=3.7 μC/cm2, and Ec=135 kV/cm. Specifically, a 1600 A(ring) film switched at 2.2 V. The possible applications such as nonvolatile ferroelectric memories and CCD IR image sensors without fatigue or retention problems, are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106941
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of interfaces on the electrical behavior of (Pb0.72La0.28)TiO3 thin films (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 2027-2029 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Paraelectric (Pb0.72La0.28)TiO3 or PLT(28) thin films were deposited on platinum coated Si substrates by the sol-gel technique. Two distinct groups of top metals, namely MT (Ni, Cr, and Ti, i.e., transition metals) and MN (Pt, Au, and Ag, i.e., noble metals) formed Ohmic and Schottky contacts, respectively. A Schottky barrier height of 1.83 eV at the Pt-PLT interface was determined. The conventional Schottky emission and Fowler–Nordheim tunneling equations were modified to account for the voltage dependence of the interfacial permittivity. It was found that Schottky emission, thermionic tunneling, and Fowler–Nordheim tunneling mechanisms were predominant in the voltage ranges of 2〈V〈7, 7〈V〈16, and V(approximately-greater-than)16, respectively. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112783
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  • 9
    Electronic Resource
    Electronic Resource
    Band-gap narrowing and potential fluctuation in Si-doped GaN (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 102-104 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density. Based on analysis of photoluminescence spectra, these prominent behaviors are accounted for by band-edge potential fluctuation associated with inhomogeneous residual impurities. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122964
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  • 10
    Electronic Resource
    Electronic Resource
    Room temperature operation of 8–12 μm InSbBi infrared photodetectors on GaAs substrates (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 602-604 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the room temperature operation of 8–12 μm InSbBi long-wavelength infrared photodetectors. The InSbBi/InSb heterostructures were grown on semi-insulating GaAs (001) substrates by low pressure metalorganic chemical vapor deposition. The voltage responsivity at 10.6 μm was about 1.9 mV/W at room temperature and the corresponding Johnson noise limited detectivity was estimated to be about 1.2×106 cmHz1/2/W. The carrier lifetime derived from the voltage dependent responsivity measurements was about 0.7 ns. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121869
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