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  • 1
    Electronic Resource
    Electronic Resource
    Structural and electrical anisotropy of (001)-, (116)-, and (103)-oriented epitaxial SrBi2Ta2O9 thin films on SrTiO3 substrates grown by pulsed laser deposition (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 6658-6664 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial SrBi2Ta2O9 (SBT) thin films with well-defined (001), (116), and (103) orientations have been grown by pulsed laser deposition on (001)-, (011)-, and (111)-oriented Nb-doped SrTiO3 substrates. X-ray diffraction pole figure and φ-scan measurements revealed that the three-dimensional epitaxial orientation relation SBT(001)||SrTiO3(001), and SBT[11¯0]||SrTiO3[100] is valid for all cases of SBT thin films on SrTiO3 substrates, irrespective of their orientations. Atomic force microscopy images of the c-axis-oriented SBT revealed polyhedron-shaped grains showing spiral growth around screw dislocations. The terrace steps of the c-axis-oriented SBT films were integral multiples of a quarter of the lattice parameter c of SBT (∼0.6 nm). The grains of (103)-oriented SBT films were arranged in a triple-domain configuration consistent with the symmetry of the SrTiO3(111) substrate. The measured remanent polarization (2Pr) and coercive field (2Ec) of (116)-oriented SBT films were 9.6 μC/cm2 and 168 kV/cm, respectively, for a maximum applied electric field of 320 kV/cm. Higher remanent polarization (2Pr=10.4 μC/cm2) and lower coercive field (2Ec=104 kV/cm) than those of SBT(116) films were observed in (103)-oriented SBT thin films, and (001)-oriented SBT revealed no ferroelectricity along the [001] axis. The dielectric constants of (001)-, (116)-, and (103)-oriented SBT were 133, 155, and 189, respectively. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1321776
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  • 2
    Electronic Resource
    Electronic Resource
    Memory window of highly c-axis oriented ferroelectric YMnO3 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3887-3889 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: YMnO3 thin films have been sputtered with different O2 partial pressures from 0% to 20%. Only the YMnO3 sputtered without O2 can be crystallized along (001) c-axis orientation after annealing at 870 °C. Mixing 10%–20% O2 partial pressure in the sputtering ambient, the excess Y2O3 in the YMnO3 films suppresses the c-axis oriented crystallization. Effects of crystallization on the ferroelectric properties of Pt/YMnO3/Y2O3/Si (MEFIS) and Pt/YMnO3/Si (MFS) gate capacitors have been investigated. The memory window of the MEFIS capacitor is enhanced by the c-axis oriented crystallization of the YMnO3. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124213
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  • 3
    Electronic Resource
    Electronic Resource
    Violet/blue light-emitting cerium silicates (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2389-2391 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observed violet/blue light emitted from cerium silicates which may be useful for silicon-based optoelectronics. The cerium silicate was produced during a rapid thermal annealing at high temperature (〉1100 °C) from the interface between silicon substrate and cerium oxide film. Detailed experiments including x-ray diffraction, high-resolution transmission electron microscope, and Auger depth profiling showed that the cerium silicate consists of Ce4.667(SiO4)3O and Ce2Si2O7 phases. The photoluminescence of the cerium silicate is very strong at room temperature. Specifically, the 358 nm luminescence line is attributed to the Ce2Si2O7 phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125023
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth of (103)-oriented ferroelectric SrBi2Ta2O9 thin films on Si(100) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2922-2924 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Non-c-axis-oriented ferroelectric SrBi2Ta2O9 (SBT) epitaxial thin films with (103) orientation have been grown by pulsed laser deposition on buffered Si(100) substrates. For the buffer layers, a heterostructure consisting of MgO(111)/YSZ(100)/Si(100) was applied to induce the growth of a (111)-oriented SrRuO3 (SRO) bottom electrode. X-ray diffraction θ–2θ and φ scans revealed well-defined orientation relationships, viz. SBT(103)(parallel)SRO(111)(parallel)MgO(111)(parallel)YSZ(100)(parallel)Si(100); SBT[010](parallel)SRO[01¯1](parallel)MgO[01¯1](parallel)YSZ〈001〉(parallel)Si〈001〉. The ferroelectric measurements of the (103)-oriented SBT films showed a remanent polarization (Pr) of 5.2 μC/cm2 and a coercive field (Ec) of 76 kV/cm for a maximum applied electric field of 440 kV/cm. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370984
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  • 5
    Electronic Resource
    Electronic Resource
    Growth and characterization of non-c-oriented epitaxial ferroelectric SrBi2Ta2O9 films on buffered Si(100) (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 3260-3262 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown non-c-oriented SrBi2Ta2O9 (SBT) epitaxial thin films with well-defined (116) orientation by pulsed laser deposition on yttria-stabilized zirconia-buffered (YSZ-buffered) Si(100) substrates covered with electrically conductive (110)-oriented SrRuO3 (SRO) bottom electrodes. The epitaxial growth of (110)-oriented SRO films on (100)-oriented YSZ on Si(100) was confirmed both by x-ray pole figures and transmission electron microscopy (TEM) analyses showing a diagonal-type rectangle-on-cube epitaxy of SRO on YSZ with respect to the substrate and yielding specific multiple twins which originate from the particular in-plane positioning of SRO on YSZ. Cross-sectional TEM analyses revealed a roof-like morphology at the SBT/SRO interface while the other interfaces are sharp. The ferroelectric measurements of the (116)-oriented SBT films show a remanent polarization (2Pr) of 6.8 μC/cm2 and a coercive field (2Ec) of 142 kV/cm for a maximum applied electric field of 283 kV/cm. A comparable hysteresis loop recorded from local piezoresponse by an atomic force microscope working in a piezoelectric mode has also been obtained. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1324982
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  • 6
    Electronic Resource
    Electronic Resource
    Epitaxial growth of ferroelectric SrBi2Ta2O9 thin films of mixed (100) and (116) orientation on SrLaGaO4(110) (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2961-2963 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial ferroelectric SrBi2Ta2O9 (SBT) thin films with a well-defined crystallographic orientation state consisting of a mix of (100) and (116) orientations have been grown on (110)-oriented SrLaGaO4 (SLG) substrates by pulsed laser deposition. X-ray pole figure analyses revealed the presence of two epitaxial orientation relationships, viz. SBT(100)||SLG(110); SBT[001]||SLG[001] and SBT(116)||SLG(110); SBT[1¯10]||SLG[001]. By calculating the integrated intensity of certain x-ray diffraction peaks, it was established that the crystallinity and the in-plane orientation of the (100) and (116) orientation are maximized at a substrate temperature of 775 and 788 °C, respectively, and that the volume fraction of the (100) orientation at about 770 °C reached about 60%.© 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1415376
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  • 7
    Electronic Resource
    Electronic Resource
    Anisotropic ferroelectric properties of epitaxially twinned Bi3.25La0.75Ti3O12 thin films grown with three different orientations (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1040-1042 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially twinned (001)- , (118)- , and (104)-oriented La-substituted Bi4Ti3O12 (BLT) ferroelectric films have been grown by pulsed laser deposition on (001)- , (011)- , and (111)-oriented SrTiO3 single-crystal substrates, respectively, covered with SrRuO3. Well-defined (001)-oriented BLT films were grown at a substrate temperature as low as 600 °C. By x-ray diffraction characterization it has been found that the low-index three-dimensional epitaxial orientation relationship BLT(001)||SrRuO3(001)||SrTiO3(001); BLT[11¯0]||SrRuO3[100]||SrTiO3[100] is valid for all epitaxially twinned BLT thin films grown on SrRuO3-covered SrTiO3 substrates in spite of their different orientations. The (104)-oriented BLT films showed an about 1.5 times higher remanent polarization (2Pr=31.9 μC/cm2) than the (118)-oriented BLT films (2Pr=20.7 μC/cm2), while (001)-oriented BLT films revealed only a small polarization component (2Pr=1.1 μC/cm2), thus demonstrating the ferroelectric anisotropy. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1447321
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  • 8
    Electronic Resource
    Electronic Resource
    Comparison of memory effect between YMnO3 and SrBi2Ta2O9 ferroelectric thin films deposited on Si substrates (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1066-1068 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For the ferroelectric gate-type capacitors, we have fabricated Pt/YMnO3(YMO)/Si and Pt/SrBi2Ta2O9(SBT)/Si structures. We have used the highly c-axis oriented hexagonal YMO thin films (εr(approximate)19) and the polycrystalline SBT thin films (εr(approximate)150) with a dominant (115) orientation, respectively. The memory effect resulting from the ferroelectric switching properties is investigated as a function of the dielectric constant of ferroelectric thin films with 150 nm in thickness. About 3 times wider memory window is obtained by using a relatively low dielectric constant of YMO than that using a relatively high dielectric constant of SBT. Typical memory windows of the Pt/YMO/Si and the Pt/SBT/Si capacitors are 1.24 and 0.34 V, respectively, at a gate voltage of 5 V. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125940
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  • 9
    Electronic Resource
    Electronic Resource
    Strong polarization enhancement in asymmetric three-component ferroelectric superlattices (2005)
    [s.l.] : Macmillian Magazines Ltd.
    Nature 433 (2005), S. 395-399 
    Details
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] Theoretical predictions—motivated by recent advances in epitaxial engineering—indicate a wealth of complex behaviour arising in superlattices of perovskite-type metal oxides. These include the enhancement of polarization by strain and the possibility of asymmetric properties in ...
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1038/nature03261
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  • 10
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    Structural, electronic, and magnetic properties of bulk and epitaxial LaCoO3 through diffusion Monte Carlo (2019)
    American Physical Society
    Details
    Publication Date: 2019-12-26
    Electronic ISSN: 2475-9953
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by American Physical Society
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