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  • 1
    Electronic Resource
    Electronic Resource
    Mechanism of phase-shifted distributed-feedback laser with linearly chirped grating for stable-mode operation (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 1902-1904 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A phase-shifted (PS) distributed-feedback (DFB) laser with linearly chirped grating (CG) was analyzed using the coupled-mode equations and rate equations. It was found that the mode instability of a DFB laser was caused by both the lasing-mode movement and the deterioration of the effective reflectivity spectrum of the corrugated-grating waveguide caused by the nonuniform carrier distribution under the injection. By suitable arrangement of the chirped factor of the PS-CG-DFB laser and the phase-shift value, PS-CG-DFB laser can overcome the effective reflectivity spectrum-deterioration problem and make the mode more stable under injection.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349471
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  • 2
    Electronic Resource
    Electronic Resource
    Band structure of InAsSb strained-layer superlattices (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 1842-1845 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Band structures of relaxed InSb/InAs1−xSbx strained-layer superlattices (SLSs) were calculated based on Herman-Skillman neutral atom ionization energies, effective dipole theory, and strain shift of band edges. The conduction-band minimum and the valence-band maximum of InAs1−xSbx are lower in energy than those of InSb, respectively. The band structures of InSb/InAs1−xSbx are type II SLSs and an extreme type II superlattice is predicted for x〈0.82. This extreme type II superlattice with a proper structure factor can have favorable properties for infrared detectors covering the 8–12 μm wavelength range. The requirement for layer thickness of InSb/InAs1−xSbx SLSs with different absorption mechanisms was discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351168
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  • 3
    Electronic Resource
    Electronic Resource
    Phase-shifted distributed feedback laser with linearly chirped grating for narrow linewidth and high-power operation (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 331-333 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Phase-shifted distributed feedback laser with linearly chirped grating (PS-CG-DFB) was analyzed. The field distribution, threshold gain difference between the lasing mode and the next lowest threshold gain mode, linewidth of the lasing mode, and output power of PS-CG-DFB were self-consistently calculated under different injection levels. It is found that the lasing mode pattern and the carrier concentration distribution are "locked'' at high injection level due to the strong interaction between carriers and photons. The chirped grating compensates the spatial hole burning effect to the mode stability and makes the mode stable in the whole injection region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104677
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  • 4
    Electronic Resource
    Electronic Resource
    Mode selection and spatial hole burning suppression of a chirped grating distributed feedback laser (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1400-1402 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new kind of distributed feedback (DFB) laser with a linearly chirped grating is proposed and investigated theoretically for the first time. The eigenmodes of the chirped grating DFB (CG-DFB) and the field intensity distribution are calculated. With a suitable cavity length and chirp factor, the threshold gain difference to the next competence mode can be very large and will keep the single longitudinal mode stable. The chirp factor can be chosen to make the field intensity distribution quite uniform and at the same time keep the threshold gain difference large. This behavior effectively suppresses spatial hole burning and hence makes CG-DFB lasers that are stable single mode at high power, and with a narrow linewidth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102480
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  • 5
    Electronic Resource
    Electronic Resource
    Low-loss substrate for epitaxial growth of high-temperature superconductor thin films (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2677-2679 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A perovskite-like single-crystal substrate material has been investigated that simultaneously permits epitaxial growth of 1-2-3 superconductor films and possesses desirable rf properties of low dielectric constant and loss tangent. The lattice constant of 3.792 A(ring) provides a lattice match to within 1% of the a axis of 1-2-3. Sputtered films of erbium-barium-copper-oxide have been produced on (100) LaAlO3 substrates that exhibit sharp resistive transitions at 90 K (ΔT=1K), bulk superconductivity as determined by ac susceptibility measurements, and nearly single-crystal growth as evidenced by x-ray diffraction and high-resolution scanning electron microscopy. The high-frequency dielectric properties of LaAlO3 were experimentally investigated at several temperatures. The low-frequency dielectric constant was measured to be 15 and the microwave loss tangent ranged from 6×10−4 at room temperature to 5×10−6 at 4 K.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100543
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  • 6
    Electronic Resource
    Electronic Resource
    Mutual phase locking in series arrays of Josephson tunnel junctions at millimeter-wave frequencies (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 465-468 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mutual phase locking has been demonstrated in series arrays of two and four Josephson junctions at millimeter-wave frequencies. Experimental observations are in good agreement with theory reported earlier. This technique increases the output power available from a Josephson junction source. Available output power is expected to be proportional to the square of the number of junctions until the array impedance approaches the load impedance. The output frequency is voltage tunable over as much as an octave. Theory indicates that the technique can be extended to even larger arrays.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337625
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  • 7
    Electronic Resource
    Electronic Resource
    Negative differential resistance in a strained-layer quantum-well structure with a bound state (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3453-3456 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained-layer resonant tunneling structures of pseudomorphic GaAs-AlAs-In0.09Ga0.91As-AlAs-GaAs are studied both experimentally and with a simple quantum mechanical model. The energy spectrum of the unbiased structure includes the usual resonant states and also bound states due to the narrow-band gap InGaAs well. Strong tunneling (and negative differential resistance) are observed for the resonant states. We observe for the first time tunneling associated with a "bound-state'' energy level which result in a zero differential conductance feature. Qualitative agreement between the experimental and calculated results are shown.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339315
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  • 8
    Electronic Resource
    Electronic Resource
    Structural properties of low temperature plasma enhanced chemical vapor deposited silicon oxide films using disilane and nitrous oxide (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2986-2988 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structural properties of low temperature plasma enhanced chemical vapor deposited SiO2 films using Si2H6 and N 2O have been studied. It is observed that the degree of compaction of as-deposited SiO2 films, upon subsequent annealing, increases up to 4%. The shift of Si-O-Si stretching peak wave number of the as-deposited SiO 2 films (Δω=−20 cm−1) compared to the undensified SiO 2 films is attributed to 9.4% increase in the film density, resulting in smaller Si-O-Si bridging bond angle of 138°. It is also believed that the high temperature annealing results in the reduction of hydroxyl containing species in the film and in turn drives the dielectric constant towards that of thermal SiO2 films. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114834
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  • 9
    Electronic Resource
    Electronic Resource
    Superconducting race arbiter with subpicosecond timing discrimination (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2892-2894 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel race arbiter for ultrahigh resolution time discrimination is proposed and has been designed, fabricated, and tested in an all-niobium Josephson junction technology. The arbiter is based on a pair of quantum flux parametrons, which are single flux quantum switching devices, and is hence called a BiQFP for Bi-quantum Flux Parametron. High-speed experiments have demonstrated a rms single-shot time jitter of ±200–300 fs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105843
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  • 10
    Electronic Resource
    Electronic Resource
    Faraday rotation of Hoya FR5 glass at cryogenic temperature (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 3072-3074 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Faraday rotation and magnetization in Hoya FR5 glass is investigated in a magnetic field up to 80 kG under cryogenic temperature between 4.2 K and 10 K at the wavelength of 514.5 nm. For H/T(approximately-greater-than)10 kG K−1, the saturation is observed both in magnetization and in Faraday rotation and is interpreted by using the quantum theory of paramagnetism about the doped Tb3+ active ion. It is found that the temperature dependence of the Verdet constant is correlated with the magnetic susceptibility and the dispersion of the Verdet constant is due to the effective electric dipole transition of 4f8→4f75d1 with the resonance wavelength of 213 nm. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116426
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