ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
ZrO2 thin film has been studied as an alternative gate dielectric. It was deposited directly on a Si substrate by reactive sputtering. An equivalent oxide thickness of less than 11 Å with a leakage current of 1.9×10−3 A/cm2 at −1.5 V relative to the flat band voltage has been obtained. Well-behaved capacitance–voltage characteristics with an interface state density of less than 1011 cm−2 eV−1 and no significant frequency dispersion have been achieved. Excellent reliability properties (e.g., low charge trapping rate, good time-dependent dielectric breakdown, low stress-induced leakage current, and high dielectric breakdown) have also been obtained. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1326482
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