ISSN:
1662-9752
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
This paper presents a comparison of the reverse characteristics of mesa terminated PiNdiodes fabricated on n- and p-type 4H-SiC substrates. For n-type the attained breakdown voltages arehigher and for p-type lower than expected. This is likely to be explained by the presence of negativecharges at the interface between passivation oxide and SiC. Supported by XPS data we come to theconclusion that the RIE process creates surface charges which have an impact on the breakdownvoltage of the fabricated diodes
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/02/20/transtech_doi~10.4028%252Fwww.scientific.net%252FMSF.600-603.1011.pdf
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