Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
76 (2000), S. 691-693
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We studied the photoluminescence spectra of rapid-thermal-annealed self-assembled InAs quantum dots at 10 K. For annealing temperatures ranging from 700 to 950 °C, we observed a blueshift in the interband transition energies, a decrease in the intersublevel spacing energies, and a narrowing of photoluminescence linewidths. In this letter, we demonstrate that the tuning of the InAs quantum dots interband transition and intersublevel spacing energies can be achieved by 30 s of rapid thermal annealing. The relation between interband transition energy changes and the intersublevel spacing energies is found to be linear, with a slope close to the ratio of the dots' height to their diameter. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.125863
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