Publikationsdatum:
2014-01-11
Beschreibung:
Author(s): L. Tsetseris, B. Wang, and S. T. Pantelides The most common approach to dope an electronic material is to substitute a constituent atom with a suitable impurity. Here we show with first-principles calculations that this is not the best recipe for doping graphene with Al, P, Ga, or As impurities. Instead, substitution of two C atoms by one of ... [Phys. Rev. B 89, 035411] Published Fri Jan 10, 2014
Schlagwort(e):
Surface physics, nanoscale physics, low-dimensional systems
Print ISSN:
1098-0121
Digitale ISSN:
1095-3795
Thema:
Physik
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