Publication Date:
2016-05-28
Description:
In the present study, we discuss the origin of two dominant deep levels (E42 and E262) observed in n -type Si, which is subjected to hydrogenation by wet chemical etching or a dc H-plasma treatment. Their activation enthalpies determined from Laplace deep level transient spectroscopy measurements are E C -0.06 eV (E42) and E C -0.51 eV (E262). The similar annealing behavior and identical depth profiles of E42 and E262 correlate them with two different charge states of the same defect. E262 is attributed to a single acceptor state due to the absence of the Poole-Frenkel effect and the lack of a capture barrier for electrons. The emission rate of E42 shows a characteristic enhancement with the electric field, which is consistent with the assignment to a double acceptor state. In samples with different carbon and hydrogen content, the depth profiles of E262 can be explained by a defect with one H-atom and one C-atom. From a comparison with earlier calculations [Andersen et al ., Phys. Rev. B 66 , 235205 (2002)], we attribute E42 to the double acceptor and E262 to the single acceptor state of the CH 1 AB configuration, where one H atom is directly bound to carbon in the anti-bonding position.
Print ISSN:
0021-8979
Electronic ISSN:
1089-7550
Topics:
Physics
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