ISSN:
1432-0630
Keywords:
65
;
85
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We report on specific-heat measurements (0.1 K〈T〈2K) of heavily neutron-irradiated (4.8×1019 and 3×1021 n0/cm2) and as-received Si single crystals and of an evaporated amorphous Si film. The sample irradiated with the higher dose contains 6% amorphous regions, the other remains crystalline. The magnitude of the specific heat increases with “amorphicity”. However, already in the crystalline sample the specific heat exceeds the Debye contribution. We attribute the excess specific heat to exchange-coupled dangling bonds located at defects in crystalline environments and — for the amorphous sample — to dangling bonds in the amorphous network.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616454
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